7N65 TUOFENG

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 6

Technical content

Features

 RDS(ON) = 1.27Ω (Max.) @ VGS = 10V, ID = 3.5A  Fast switching  100% avalanche tested  Improved dv/dt capability Application  DC-DC & DC-AC Converters  Uninterruptible Power Supply (UPS)  Switch Mode Low Power Supplies Package TO-220 TO-220F SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD N-CHANNEL ENHANCEMENT MODE POWER MOSFET www.sztuofeng.com ,2018 V1.0 Mar

Electrical Characteristics TC=25℃ unless otherwise specified Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS = 0V,ID = 250mA 650 - - V △V(BR)DSS /△TJ Breakdown Voltage Temperature Coefficient Reference to 25℃, ID = 250μA - 0.5 - V/℃ IDSS Zero Gate Voltage Drain Current VDS = 650V, VGS = 0V - - 1 μA VDS = 520V, TC = 125℃ - - 50 μA IGSS Gate to Body Leakage Current VDS = 0V, VGS = ± 20V - - ±10 nA On Characteristics VGS(th) Gate Threshold Voltage note4 VDS = VGS, ID = 250μA 2 - 4 V RDS(on) Static Drain-Source On-Resistance VGS =10V, ID = 3.5A - 1.0 1.27 Ω gFS Forward Transconductance VDS =15V, ID = 3.5A - 6 - S Dynamic Characteristics Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz - 1145 - pF Coss Output Capacitance - 130 - pF Crss Reverse Transfer Capacitance - 28 - pF Qg Total Gate Charge VDD = 520V, ID = 7A, VGS = 10V - 41 - nC Qgs Gate-Source Charge - 7.5 - nC Qgd Gate-Drain(“Miller”) Charge - 22 - nC Switching Characteristics td(on) Turn-On Delay Time VDD = 325V, ID = 3.5A, RG = 4.7Ω, VGS = 10V - 20 - ns tr Turn-On Rise Time - 12 - ns td(off) Turn-Off Delay Time - 45 - ns tf Turn-Off Fall Time - 15 - ns Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - 7 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 28 A VSD Drain to Source Diode Forward Voltage VGS = 0V, IS = 7A - - 1.6 V trr Reverse Recovery Time VGS = 0V, IF = 7A, di/dt =100A/μs - 400 - ns Qrr Reverse Recovery Charge - 2.6 - uC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 10mH, IAS = 7A, VDD = 50V, RG = 25Ω, Starting TJ = 25° C 3. ISD ≤ 7A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25° C 4. Pulse width ≤ 300μs; duty cycle ≤ 2%. 7N65 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD N-CHANNEL ENHANCEMENT MODE POWER MOSFET - 2 - www.sztuofeng.com ,2018 V1.0 Mar

Figure 14. Peak Diode Recovery dv/dt Test Circuit & Waveforms (For N-channel)