START420 STMICROELECTRONICS

Document overview

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Technical content

1/7July, 3 2002 START420 NPN Silicon RF Transistor SOT343 (SC70) ORDER CODE START420TR BRANDING 420

APPLICATIONS

  • LNA FOR GSM/DCS, DECT, PDC, PCS, PCN
  • PREDRIVER FOR DECT
  • GENERAL PURPOSE 500MHz-5GHz
  • LOW NOISE FIGURE: NFmin = 1.05dB @ 1.8GHz, 5mA, 2V
  • COMPRESSION P1dB = 12.5dBm @ 1.8GHz, 20mA, 2V
  • ULTRA MINIATURE SOT343 PACKAGE

DESCRIPTION

The START420 is a member of the START family that provide market with the state of the art of RF silicon process. Manufacturated in the third generation of ST proprietary bipolar process, it offers the best mix of gain and NF for given breakdown voltage(BVceo). It reaches performance level only achieved with GaAs products before. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit Vceo Collector emitter voltage 4.5 V Vcbo Collector base voltage 15 V Vebo Emitter base voltage 1.5 V Ic Collector current 40 mA Ib Base current 4 mA Ptot Total dissipation, Ts = 101 180 mW Tstg Storage temperature -65 to 150 oC Tj Max. operating junction temperature 150 oC Rthjs Thermal Resistance Junction soldering point 270 oC/W ABSOLUTE MAXIMUM RATINGS

Note(1): Gms = | S21 / S12 | Symbol Parameter Test Conditions Min. Typ. Max. Unit Icbo Collector cutoff current Vcb = 5V, Ie = 0A 150 nA Iebo Emitter-base cutoff current Veb = 1.5V, Ic = 0A 15 µA Hfe DC current gain Ic = 20mA, Vce = 3V 100 150 NFmin Minimim noise figure Ic = 5mA, Vce = 2V, f = 1.8GHz, Zs = Zsopt 1.05 dB Ga NFmin associated gain Ic = 5mA, Vce = 2V, f = 1.8GHz 16 dB |S21|2 Insertion power gain Ic = 20mA, Vce = 2V, f = 1.8GHz 19.5 dB Gms (1) Maximum stable gain Ic = 20mA, Vce = 2V, f = 1.8GHz 22.6 dB P-1dB 1dB compression point Ic = 20mA,Vce = 2V, f = 1.8GHz 12.5 dBm OIP3 Ouput third order intercept point Ic = 20mA,Vce = 2V, f = 1.8GHz 23 dBm ELECTRICAL CHARACTERISTICS (Tj=25 oC,unless otherwise specified) PINOUT PIN CONNECTION Pin No. Description 1B A S E

3 COLLECTOR

2,4 EMITTER

Symbol Value Symbol Value Symbol Value TMEAS 27.0 FC 0.66 XJBC 0.53 IS 1.00E-16 EG 1.12 XTI 3.76 ISE 1.58E-11 NF 1 BF 280 NR 1 NE 3.1 VAF 70 ISC 1.55E-15 BR 9.52 VAR 2.3 TR 7E-10 PTF 32.0 VTF 27.9 XTF 9.84 ITF 0.498 MJE 0.497 RB 12.86 RBM 5 MJC 0.292 RC 3.7 RE 0.42 MJS 0.245 CJE 421E-15 VJE 1.03 IKR 8.32E-3 CJC 160E-15 VJC 0.6 XTB -0.54 CJS 112E-15 VJS 0.4 SPICE PARAMETERS (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) PACKAGE EQUIVALENT CIRCUIT TRANSISTOR CHIP DATA C Transistor Chip B’ C’ L=0.3 nH L=0.6 nH L3 L5 L6 C=66 fF . . L=0.35 nH L1 L=0.1 nH L=0.05 nHL2 C=334 fFC=436 fF C1 C3 E L=0.6 nH B . . FOR MORE ACCURACY SIMULATION IN SATURATION REGION : Adding the 5 Spice parameters showed in Table A and using ST Spice Library (available on request) you can achieve a more accuracy simulation in the saturation region. ST Spice library is compatible with following simulators: ELDO MENTOR (any version), SPECTRE CADENCE (any version), ADS (version 2001 only). Table A (Spice Parameters extracted in saturation region) RW Vjj ENP VRP RP In order to avoid high complexity of the package equivalent circuit, the two emitter leads of SOT-343 package are combined in one electrical connection.

COMMON EMITTER S-PARAMETERS ( VCE = 2V, IC = 20mA ) FREQ IS11II S 21II S 12IS 12∠Φ IS22IS 22∠Φ (MHz) 1 0.476 -137 16.756 94 0.038 47 0.387 -75 2 0.503 172 8.390 63 0.055 37 0.183 -123 3 0.533 148 4.936 46 0.069 27 0.143 -171 4 0.559 134 3.873 28 0.085 14 0.154 163 S11∠Φ S21∠Φ

TAPE & REEL DIMENSIONS mm MIN. TYP . MAX A 178.5 179 179.5 C 12.8 13.0 13.5 D 20.2 N 54.5 55 55.5 T 14.4 Ao 2.25 Bo 2.7 Ko 1.2 Po 3.8 (cumulative 10 Po) 4.0 4.2 (cumulative 10 Po) P 4.0 DEVICE ORIENTATION TOP VIEW END VIEW 420 420 420 420

PACKAGE DIMENSIONS SOT343 (SC-70 4 leads) 2.00-2.20 1.90-2.10 1.15-1.35 1.15 0.55-0.65 1.30 0.80-1.00 1.15-1.35 0.10-0.20 0.45

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics  2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com