3DD3852 KOOCHIN
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
3DD3852 TRANSISTOR (NPN)
FEATURES
PCW : 2 W (Tamb=25 ℃)
25 W (Tcase=25 ℃)
MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N T Y P M A X U N I T Collector-base breakdown voltage V(BR)CBO IC=1mA, IE=0 80 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 60 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 6 V Collector cut-off current ICBO V CB=80V, IE=0 10 μA Emitter cut-off current IEBO V EB=6V, IC=0 10 μA DC current gain hFE * VCE=4V, IC=500mA 100 600 Collector-emitter saturation voltage VCE(sat) * IC=3A, IB=300mA 1 V Transition frequency fT V CE=12V, IC=200mA 7 MHz *Pulse test: tp≤300μS, δ≤0.02. CLASSIFICATION OF h FE Rank O P Q Range 100-200 160-320 300-600 TO-220F 1. BASE 2. COLLECTOR 3. EMITTE
Typical Characteristics 3DD3852