3DD3853 JIANGSU
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Technical content
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 3DD3853 TRANSISTOR (NPN)
FEATURES
z High Current Gain z Saturation Voltage Low z Power Dissipation P CW : 2 W (Ta=25
25 W (Tc=25
MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Paramete r Value Unit V CBO Collector-Base Voltage 60 V V CEO Collector-Emitter Voltage 60 V V EBO Emitter-Base Voltage 7 V I C Collector Current -Continuous 3 A T J Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARA CTERISTICS (Ta=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =1mA, I E =0 60 V Collector-emitter breakdown voltage V (BR)CEO I C =10mA, I B =0 60 V Emitter-base breakdown voltage V (BR)EBO I E =100µA, I C =0 7 V Collector cut-off current I CBO V CB =60V, I E =0 100 µA Emitter cut-off current I EBO V EB =7V, I C =0 100 µA DC current gain h FE * V CE =5V, I C =500mA 60 300 Collector-emitter saturation voltage V CE(sat) * I C =3A, I B =300mA 1.0 V Transition frequency f T V CE =5V, I C =500mA 5 MHz *Pulse test: t p ≤300µS, δ≤0.02. CLASSIFICATION OF h FE Rank O Y GR Range 60-120 100-200 150-300 TO-220F 1. BASE 2. COLLECTOR 3. EMITTE www.cj-elec.com 1 C,May,2016 1 32
www.cj-elec.com 2 C,May,2016 Min. Max. Min. Max. A 4.300 4.700 0.169 0.185 A2 2.800 3.200 0.110 0.126 A3 2.500 2.900 0.098 0.114 b 0.500 0.750 0.020 0.030 b1 1.100 1.350 0.043 0.053 b2 1.500 1.750 0.059 0.069 c 0.500 0.750 0.020 0.030 D 9.960 10.360 0.392 0.408 E 14.800 15.200 0.583 0.598 e F Ф h 0.000 0.300 0.000 0.012 L 28.000 28.400 1.102 1.118 L1 1.700 1.900 0.067 0.075 L2 0.900 1.100 0.035 0.043 2.700 REF. 3.500 REF. 0.138 REF. 0.106 REF. 0.800 REF. 0.500 REF. 0.031 REF. 0.020 REF. Symbol Dimensions In Millimeters Dimensions In Inches 2.540 TYP. 0.100 TYP. 1.300 REF. 0.051 REF.