2SK3019 TUOFENG

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Interfacing, switching (30V, 100mA) zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Storage temperature V DSS V GSS P D Tch 30 V V mA mW ±20 ±100I D I DP Continuous Pulsed mA±400 200 150 Tstg °C−55 to +150 Symbol Limits Unit

1 Pw≤10µs, Duty cycle≤1%

2 With each pin mounted on the recommended lands. Thermal resistance Parameter °C / WRth(ch-a) Symbol Limits Unit Channel to ambient With each pin mounted on the recommended lands. 625 SOT-523 MARKING EquivalentCircuit . w 1.GATE 2.SOURCE 3.DRAIN *w：week code V(BR)DSS RDS(on)MAX ID 30V 2.5Ω@4.5V 0.1A 3.0Ω@2.5V N-Channel 30-V D-S MOSFET SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-523Plastic-EncapsulateMOSFETS 2SK3019 KN www.sztuofeng.com ,2018 V1.01 Mar ESDprotected2KVHBM

Electrical characteristics (Ta=25°C) Parameter Symbol I GSS V (BR)DSS I DSS V GS(th) R DS(on) R DS(on) C iss fs C oss C rss Min. 0.8 ±100 1.5 − 13 AV GS = ±20V, V DS = 0V I D = 10µA, V GS = 0V V DS = 30V, V GS = 0V V DS = 3V, I D = 100µA I D = 10mA, V GS = 4V I D = 1mA, V GS = 2.5V V DS = 5V V DS = 3V, I D = 10mA V GS = 0V f = 1MHz V µA V Ω Ω pF mS pF pF t d(on) − 15 − I D = 10mA, V DD = 5Vns t r − 35 − V GS = 5Vns t d(off) − 80 − R L = 500Ωns t f − 80 − R G = 10Ωns Typ. Max. Unit Conditions Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain curren t Gate threshold voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Static drain-source on-state resistance Electrical characteristic curves 0 1 23 450 0.05 0.1 0.15 DRAIN CURRENT : I D (A) DRAIN-SOURCE VOLTAGE : V DS (V) 3.5V 2.5V V GS =1.5V Ta=25°C Pulsed Fig.1 Typical output characteristics 0.1m 100m DRAIN CURRENT : I D (A) GATE-SOURCE VOLTAGE : V GS (V) 10m 0.2m 0.5m 50m 20m 200m Ta=125 −25 V DS =3V Pulsed Fig.2 Typical transfer characteristics −50 0 1.5 GATE THRESHOLD VOLTAGE : V GS (th) (V) CHANNEL TEMPERATURE : Tch ( 0.5 −25 25 50 75 100 125 150 Fig.3 Gate threshold voltage vs. channel temperature V DS =3V I D =0.1mA Pulsed 0.001 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS (on) (Ω) DRAIN CURRENT : I D (A) 0.5 Ta=125 −25 V GS =4V Pulsed Fig.4 Static drain-source on-state resistance vs. drain current ( Ι ) 0.001 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS (on) (Ω) DRAIN CURRENT : I D (A) 0.5 Ta=125°C 75°C 25°C −25°C V GS =2.5V Pulsed Fig.5 Static drain-source on-state resistance vs. drain current (ΙΙ) 0 5 10 15 200 GATE-SOURCE VOLTAGE : V GS (V) I D =0.1A STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS (on) (Ω) Ta=25°C Pulsed I D =0.05A Fig.6 Static drain-source on-state resistance vs. gate-source voltage n 2SK3019 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-523Plastic-EncapsulateMOSFETS www.sztuofeng.com ,2018 V1.02 Mar

−50 0 25 150 CHANNEL TEMPERATURE : Tch (°C) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS (on) (Ω) −25 50 75 100 125 Fig.7 Static drain-source on-state resistance vs. channel temperature V GS =4V Pulsed I D =100mA I D =50mA 0.0001 0.001 0.01 0.02 0.5 FORWARD TRANSFER ADMITTANCE : |Yfs| (S) DRAIN CURRENT : I D (A) 0.005 0.05 0.1 0.2 0.1 0.2 0.5 0.002 Ta=−25 125 V DS =3V Pulsed Fig.8 Forward transfer admittance vs. drain current 200m REVERSE DRAIN CURRENT : I DR (A) SOURCE-DRAIN VOLTAGE : V SD (V) 1.5 10.50 100m 50m 20m 10m 0.5m 0.2m 0.1m V GS =0V Pulsed Ta=125 −25 Fig.9 Reverse drain current vs. source-drain voltage ( Ι ) 200m REVERSE DRAIN CURRENT : I DR (A) SOURCE-DRAIN VOLTAGE : V SD (V) 1.5 10.50 100m 50m 20m 10m 0.5m 0.2m 0.1m Ta=25 Pulsed V GS =4V Fig.10 Reverse drain current vs. source-drain voltage ( ΙΙ ) 0.1 CAPACITANCE : C (pF) DRAIN-SOURCE VOLTAGE : V DS (V) 0.5 0.2 0.5 1 2 5 10 20 50 Fig.11 Typical capacitance vs. drain-source voltage C iss C oss C rss Ta =25 f=1MH Z V GS =0V 0.1 500 SWITCHING TIME : t (ns) DRAIN CURRENT : I D (mA) 0.2 0.5 1 2 5 10 20 50 100 200 1000 100 Fig.12 Switching characteristics (See Figures 13 and 14 for the measurement circuit and resultant waveforms) Ta =25°C V DD =5V V GS =5V R G =10Ω Pulsed t d(off) t r t d(on) t f zSwitching characteristics measurement circuit Fig.13 Switching time measurement circuit V GS R G V DS D.U.T. I D R L V DD 90% 50% 10% 90% 10% 50% Pulse width 10%V GS V DS 90% t f t off t d(off) t r t on t d(on) Fig.14 Switching time waveforms 2SK3019 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-523Plastic-EncapsulateMOSFETS www.sztuofeng.com ,2018 V1.03 Mar

www.sztuofeng.com ,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-523Plastic-EncapsulateMOSFETS Mar 2SK3019 Min. Max. Min. Max. A 0.700 0.900 0.028 0.035 A1 0.000 0.100 0.000 0.004 A2 0.700 0.800 0.028 0.031 b1 0.150 0.250 0.006 0.010 b2 0.250 0.350 0.010 0.014 c 0.100 0.200 0.004 0.008 D 1.500 1.700 0.059 0.067 E 0.700 0.900 0.028 0.035 E1 1.450 1.750 0.057 0.069 e e1 0.900 1.100 0.035 0.043 L L1 0.260 0.460 0.010 0.018 /g5370 ° 8 ° 0 ° 8 ° 0.400 REF. 0.016 REF. Symbol Dimensions In Millimeters Dimensions In Inches 0.500 TYP. 0.020 TYP. /g54/g50/g55/g16/g24/g21/g22/g3/g51/g68/g70/g78/g68/g74/g72/g3/g50/g88/g87/g79/g76/g81/g72/g3/g39/g76/g80/g72/g81/g86/g76/g82/g81/g86/g3 /g54/g50/g55/g16/g24/g21/g22 /g54/g88/g74/g74/g72/g86/g87/g72/g71/g3/g51/g68/g71/g3/g47/g68/g92/g82/g88/g87 /g3