2SK3018 TUOFENG

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Interfacing, switching (30V, 100mA) zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Storage temperature V DSS V GSS P D Tch 30 V V mA mW ±20 ±100I D I DP Continuous Pulsed mA±400 200 150 Tstg °C−55 to +150 Symbol Limits Unit

1 Pw≤10µs, Duty cycle≤1%

2 With each pin mounted on the recommended lands. Thermal resistance Parameter °C / WRth(ch-a) Symbol Limits Unit Channel to ambient With each pin mounted on the recommended lands. 625 SOT-23 MARKING EquivalentCircuit . w 1.GATE 2.SOURCE 3.DRAIN *w：week code V(BR)DSS RDS(on)MAX ID 30V 2.5Ω@4.5V 0.1A 3.0Ω@2.5V N-Channel 30-V D-S MOSFET SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS 2SK3018 KN SOT-323 www.sztuofeng.com ,2018 V1.01 Mar ESDprotected2KVHBM

Electrical characteristics (Ta=25°C) Parameter Symbol I GSS V (BR)DSS I DSS V GS(th) R DS(on) R DS(on) C iss fs C oss C rss Min. 0.8 ±100 1.5 − 13 AV GS = ±20V, V DS = 0V I D = 10µA, V GS = 0V V DS = 30V, V GS = 0V V DS = 3V, I D = 100µA I D = 10mA, V GS = 4V I D = 1mA, V GS = 2.5V V DS = 5V V DS = 3V, I D = 10mA V GS = 0V f = 1MHz V µA V Ω Ω pF mS pF pF t d(on) − 15 − I D = 10mA, V DD = 5Vns t r − 35 − V GS = 5Vns t d(off) − 80 − R L = 500Ωns t f − 80 − R G = 10Ωns Typ. Max. Unit Conditions Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain curren t Gate threshold voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Static drain-source on-state resistance Electrical characteristic curves 0 1 23 450 0.05 0.1 0.15 DRAIN CURRENT : I D (A) DRAIN-SOURCE VOLTAGE : V DS (V) 3.5V 2.5V V GS =1.5V Ta=25°C Pulsed Fig.1 Typical output characteristics 0.1m 100m DRAIN CURRENT : I D (A) GATE-SOURCE VOLTAGE : V GS (V) 10m 0.2m 0.5m 50m 20m 200m Ta=125 −25 V DS =3V Pulsed Fig.2 Typical transfer characteristics −50 0 1.5 GATE THRESHOLD VOLTAGE : V GS (th) (V) CHANNEL TEMPERATURE : Tch ( 0.5 −25 25 50 75 100 125 150 Fig.3 Gate threshold voltage vs. channel temperature V DS =3V I D =0.1mA Pulsed 0.001 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS (on) (Ω) DRAIN CURRENT : I D (A) 0.5 Ta=125 −25 V GS =4V Pulsed Fig.4 Static drain-source on-state resistance vs. drain current ( Ι ) 0.001 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS (on) (Ω) DRAIN CURRENT : I D (A) 0.5 Ta=125°C 75°C 25°C −25°C V GS =2.5V Pulsed Fig.5 Static drain-source on-state resistance vs. drain current (ΙΙ) 0 5 10 15 200 GATE-SOURCE VOLTAGE : V GS (V) I D =0.1A STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS (on) (Ω) Ta=25°C Pulsed I D =0.05A Fig.6 Static drain-source on-state resistance vs. gate-source voltage n 2SK3018 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS www.sztuofeng.com ,2018 V1.02 Mar

−50 0 25 150 CHANNEL TEMPERATURE : Tch (°C) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS (on) (Ω) −25 50 75 100 125 Fig.7 Static drain-source on-state resistance vs. channel temperature V GS =4V Pulsed I D =100mA I D =50mA 0.0001 0.001 0.01 0.02 0.5 FORWARD TRANSFER ADMITTANCE : |Yfs| (S) DRAIN CURRENT : I D (A) 0.005 0.05 0.1 0.2 0.1 0.2 0.5 0.002 Ta=−25 125 V DS =3V Pulsed Fig.8 Forward transfer admittance vs. drain current 200m REVERSE DRAIN CURRENT : I DR (A) SOURCE-DRAIN VOLTAGE : V SD (V) 1.5 10.50 100m 50m 20m 10m 0.5m 0.2m 0.1m V GS =0V Pulsed Ta=125 −25 Fig.9 Reverse drain current vs. source-drain voltage ( Ι ) 200m REVERSE DRAIN CURRENT : I DR (A) SOURCE-DRAIN VOLTAGE : V SD (V) 1.5 10.50 100m 50m 20m 10m 0.5m 0.2m 0.1m Ta=25 Pulsed V GS =4V Fig.10 Reverse drain current vs. source-drain voltage ( ΙΙ ) 0.1 CAPACITANCE : C (pF) DRAIN-SOURCE VOLTAGE : V DS (V) 0.5 0.2 0.5 1 2 5 10 20 50 Fig.11 Typical capacitance vs. drain-source voltage C iss C oss C rss Ta =25 f=1MH Z V GS =0V 0.1 500 SWITCHING TIME : t (ns) DRAIN CURRENT : I D (mA) 0.2 0.5 1 2 5 10 20 50 100 200 1000 100 Fig.12 Switching characteristics (See Figures 13 and 14 for the measurement circuit and resultant waveforms) Ta =25°C V DD =5V V GS =5V R G =10Ω Pulsed t d(off) t r t d(on) t f zSwitching characteristics measurement circuit Fig.13 Switching time measurement circuit V GS R G V DS D.U.T. I D R L V DD 90% 50% 10% 90% 10% 50% Pulse width 10%V GS V DS 90% t f t off t d(off) t r t on t d(on) Fig.14 Switching time waveforms 2SK3018 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS www.sztuofeng.com ,2018 V1.03 Mar

www.sztuofeng.com ,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS Mar SOT-23PackageOutlineDimensions SOT-23SuggestedPadLayout Symbol DimensionsInMillimeters DimensionsInInches Min Max Min Max A 0.900 1.150 0.035 0.045 0.000 0.100 0.000 0.004 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 2.250 2.550 0.089 0.100 e

0.950 TYP

0.037 TYP

1.800 2.000 0.071 0.079 L

0.550 REF

0.022 REF

0.300 0.500 0.012 0.020 θ 8° 0° 2SK3018