2SD2318 ROHM

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Rev.A 1/2 High-current gain Power Transistor (60V, 3A) 2SD2318 zFeatures 1) High DC current gain. 2) Low saturation voltage. (Typ. VCE(sat) =0.5V at IC / IB=2A / 0.5A) 3) Complements the 2SB1639. zAbsolute maximum ratings (Ta=25°C) Parameter ∗ Single pulse PW=100ms Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 4.5 ∗ 150 −55 to +150 Unit V V V A A(Pulse) W

15 W(TC=25°C)

Collector power dissipation Junction temperature Storage temperature zExternal dimensions (Unit : mm) 2.3 0.5 1.0 0.5 9.5 2.5 0.8Min. 1.5 6.5 2.3 (2)(3) C0.5 0.65 0.9 (1) 0.75 2.3 0.9 1.55.5 (3) Emitter (2) Collector (1) Base ROHM : CPT3 EIAJ : SC-63 5.1 zPackaging specifications and hFE Type 2SD2318 CPT3 UV TL 2500 Package hFE Code Basic ordering unit (pieces) zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) fT Cob 100 100 1.0 V V V µA µA V MHz ∗pF IC=50µA IC=1mA IE=50µA VCB=80V VEB=6V IC/IB=2A/0.05A VBE(sat) −− 1.5 V ∗IC/IB=2A/0.05A hFE 560 − 1800 − VCE/IC=4V/0.5A VCE=5V, IE=−0.2A, f=10MHz VCB=10V, IE=0A, f=1MHz Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Transition frequency Output capacitance Base-emitter saturation voltage DC current transfer ratio ∗Measured using pulse current.

Rev.A 2/2 zElectrical characteristics curves COLLECTOR TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter output characteristics COLLECTOR CURRENT : IC (A) 0.5 1.0 1.5 2.0 2.5 3.0 5623 410 20mA Ta=25°C IB=5mA 35mA 25mA 30mA 10mA15mA 50mA 45mA 40mA COLLECTOR CURRENT : IC (A) 0.1 0.2 0.5 0.02 0.05 0.01 BASE TO EMITTER VOLTAGE : VBE (V) Fig.2 Grounded emitter propagation characteristics VCE=4V Ta=100 −25 10000DC CURRENT GAIN : hFE 100 200 500 1000 2000 5000 COLLECTOR CURRENT : IC (A) Fig.3 DC current gain vs. collector current Ta=25°C VCE=5V COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current VCE=4V Ta=100°C 25°C −25°C 10000DC CURRENT GAIN : hFE 100 200 500 1000 2000 5000 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 0.1 0.2 0.5 0.02 0.05 0.01 COLLECTOR CURRENT : IC (A) Fig.5 Collector-emitter saturation voltage vs. collector current Ta=25°C IC/IB=50 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V) 0.1 0.2 0.5 0.02 0.05 0.01 COLLECTOR CURRENT : IC (A) IC/IB=40 Fig.6 Collector-emitter saturation voltage Base-emitter saturation voltage -Collector current Ta=-25°C 25°C 25°C -25°C 100°C VBE(sat) VCE(sat) 1000TRANSITION FREQUENCY : fT (MHz) 100 200 500 −1−0.1−0.01−0.001 ENITTER CURRENT : IE (A) Fig.7 Resistance ratio vs. collector current Ta=25°C VCE=5V 1000COLLECTOR OUTPUT CAPACITANCE : Cob(pF) 100 200 500 10010 20 500.5 1 2 50.20.1 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.8 Collector output capacitance vs. collector-base voltage Ta=25°C f=1MHz IE=0A DC Ta=25°C ∗ Single nonrepetitive pulse COLLECTOR CURRENT : IC (A) 0.1 0.2 0.5 0.02 0.05 0.01 1 2 5 10 20 50 1000.50.20.1 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.9 Safe operating area IC Max (Pulse∗) Pw=1ms Pw=10ms 100ms

Appendix1-Rev1.1 The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.