IMZ4 ROHM

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Rev.A 1/4 General purpose transistor (dual transistors) IMZ4 zFeatures 1) Includes a 2SA1036K and a 2SC411K transistor in a SMT package. 2) Mounting possible with SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) High collector current. IC=500mA 5) Mounting cost and area can be cut in half. z Equivalent circuit Tr2 Tr1 (4) (5) (6) (3) (2) (1) zExternal dimensions (Unit : mm) ROHM : SMT6 EIAJ : SC-74 (1)(2)(3) 0.3+0.1 −0.05 1.6 2.8±0.2 +0.2 −0.1 (6)(5)(4) 0.95 0.95 1.9±0.2 2.9±0.2 1.1+0.2 0.8±0.1 −0.1 0 to 0.1 0.3 to 0.6 0.15−0.06 +0.1 Abbreviated symbol: Z4 All terminals have same dimensions zStructure Epitaxial planar type NPN / PNP silicon transistor zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Tr1 (NPN) Tr2 (PNP) VCBO 40 −40 V VCEO 32 −32 V VEBO 5 −5 V IC 500 −500 mA Tj 150 °C Tstg −55 to +150 °C Pd 300 (TOTAL) mW ∗ Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Junction temperature Storage temperature Collector power dissipation ∗ 200mW per element must not be exceeded.

Rev.A 2/4 zElectrical characteristics (Ta=25°C) Tr1 (NPN) Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. 120 250 6.5 1.0 1.0 560 0.6 V IC=100µA IC=1mA IE=100µA VCB=20V VEB=4V VCE=3V, IC=100mA ∗ VCE=5V, IE= −20mA, f=100MHz IC/IB=500mA/50mA VCB=10V, IE=0A, f=1MHz V V µA µA V MHz pF Typ. Max. Unit Conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance ∗ Measured using pulse current. Tr2 (PNP) Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE∗ VCE(sat) fT Cob Min. −40 −32 120 200 −1.0 −1.0 560 −0.6 V IC= −100µA IC= −1mA IE= −100µA VCB= −20V VEB= −4V VCE= −3V, IC= −100mA VCE= −5V, IE= 20mA, f= 100MHz IC/IB= −300mA/−30mA VCB= −10V, IE= 0A, f= 1MHz V V µA µA V MHz pF Typ. Max. Unit Conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance ∗ Measured using pulse current. zPackaging specifications Package Code TR T108 3000 3000 Taping Basic ordering unit (pieces) UMZ1N T2R 8000 EMZ1 IMZ1A Type

Rev.A 3/4 zElectrical characteristic curves Tr1 (NPN) 0.1 0.2 0.5 Ta=100˚C VCE=6V 25˚C−55˚C COLLECTOR CURRENT : IC (mA) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics 10 2345 100 0.50mA 0.45mA 0.40mA 0.35mA 0.30mA 0.25mA 0.20mA 0.15mA 0.10mA 0.05mA IB=0A Ta=25°C COLLECTOR CURRENT : IC (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics ( Ι ) 10 23450 500 400 300 200 100 2mA 1.8mA 1.6mA 1.4mA 1.2mA 0.2mA 0.4mA 0.6mA 0.8mA 1.0mA IB=0A Ta=25°C COLLECTOR CURRENT : IC (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Grounded emitter output characteristics ( ΙΙ ) 0.5 1 2 5 10 20 50 100 1000200 500 0.2 0.5 0.02 0.05 0.1 Ta=25°C lC/lB=10 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) COLLECTOR CURRENT : IC (mA) Fig.4 Collector-emitter saturation voltage vs. collector current 50010000.1 200100.2 50 1000.5 2012 5 100 200 500 1000DC CURRENT GAIN : hFE Ta=100°C 75°C 50°C 25°C 0°C −25°C −5 0°C VCE=3V COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current TRANSITION FREQUENCY : fT (MHz) Ta=25°C VCE=5V 100 200 500 EMITTER CURRENT : IE (mA) Fig.6 Gain bandwidth product vs. emitter current 0.5 1 2 5 10 20 50 Cib Cob Ta=25°C f=1MHz IE=0A IC=0A COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF)COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage

Rev.A 4/4 Tr2 (PNP) −0.20 −500 −200 −100 −50 −20 −10 −0.5 −0.2 VCE = −3V COLLECTOR CURRENT : IC (mA) BASE TO EMITTER VOLTAGE : VBE (V) Fig.8 Grounded emitter propagation characteristics Ta=100°C 25°C −55°C −40 −80 −20 −60 −100 0 −2 −4 −5 COLLECTOR CURRENT : IC (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Ta=25°C IB=0A −0.1mA −0.2mA −0.3mA −0.4mA −0.5mA −0.6mA −0.7mA −0.8mA −0.9mA −1mA Fig.9 Grounded emitter output characteristics ( Ι ) −200 −400 −10−5 −100 −300 −500 COLLECTOR CURRENT : IC (mA) Ta=25°C COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Grounded emitter output characteristics ( ΙΙ ) IB=0A −0.5mA −1.0mA −1.5mA −2.0mA −2.5mA −3.0mA −3.5mA −4.0mA −4.5mA −5.0mA 500 1000 200 100 DC CURRENT GAIN : hFE Ta=25°C VCE= −5V −3V −1V COLLECTOR CURRENT : IC (mA) Fig.11 DC current gain vs. collector current ( Ι ) 500 1000 200 100 DC CURRENT GAIN : hFE VCE = −3V COLLECTOR CURRENT : IC (mA) Fig.12 DC current gain vs. collector current ( ΙΙ ) Ta=100°C 25°C −55°C −0.1 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −0.5 −0.2 −0.05 −0.02 Ta=25°C IC/IB=50 COLLECTOR CURRENT : IC (mA) Fig.13 Collector-emitter saturation voltage vs. collector current ( Ι ) −0.05 −0.03 −0.02 −0.01 −0.5 −0.3 −0.2 −0.1 −1.0 lC/lB=10 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (mA) Fig.14 Collector-emitter saturation voltage vs. collector current ( Ι ) Ta=100°C 25°C − 55°C 500.5 20 100 200 500 1000 12 5 10 TRANSITION FREQUENCY : fT (MHz) Ta=25°C VCE = −5V EMITTER CURRENT : IE (mA) Fig.15 Gain bandwidth product vs. emitter current −50−0.5 −20 100 −1 −2 −5 −10 Ta=25°C f=1MHz IC=0A IE=0A COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Fig.16 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage

Appendix1-Rev1.1 The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.