2SD2144STPU ROHM
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1/3 www.rohm.com ○c 2012 ROHM Co., Ltd. All rights reserved. 2012.01 - Rev.C 2SD2114K 0∼0.1 2.8±0.2 1.6 0.3∼0.6 1.1 0.8±0.1 0.15 0.4 2.9±0.2 1.9±0.2 0.95 0.95 +0.2 −0.1 −0.1 +0.2 +0.1 −0.06+0.1 −0.05 (2)(1) (3) (1) Emitter (2) Base (3) Collector ROHM : SMT3 EIAJ : SC-59 Abbreviated symbol: BB All terminals have same dimensions ∗ Denotes hFE High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K Features Dimensions (Unit : mm) 1) High DC current gain. h FE = 1200 (Typ.) 2) High emitter-base voltage. V EBO =12V (Min.) 3) Low VCE (sat). V CE (sat) = 0.18V (Typ.) ( I C / IB = 500mA / 20mA) Structure Epitaxial planar type NPN silicon transistor Absolute maximum ratings (Ta=25C) Parameter VCBO VCEO VEBO IC PC Tj Tstg 25 V V V A(DC) W 0.5 A(Pulse)1 0.2 150 −55 to +150 Symbol Limits Unit ∗ Single pulse Pw=100ms Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Electrical characteristics (Ta=25C) Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) fT∗ Cob Min. 0.18 350 8.0 0.5 0.5 0.4 V I C=10μA IC=1mA IE=10μA VCB=20V VEB=10V IC/IB=500mA/20mA VCE=10V, IE= −50mA, f=100MHz VCB=10V, IE=0A, f=1MHz V V μA μA h FE 820 − 2700 VCE=3V, IC=10mA− V MHz pF Ron − 0.8 − IB=1mA, Vi=100mV(rms), f=1kHzΩ Typ. Max. Unit Conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Output On-resistance ∗ Measured using pulse current
2/3 www.rohm.com ○c 2012 ROHM Co., Ltd. All rights reserved. 2012.01 - Rev.C Data Sheet 2SD2114K Packaging specifications and hFE Package Code T146 3000 Taping Basic ordering unit (pieces) VW hFE 2SD2114K Type hFE values are classified as follows : Item hFE V 820 to 1800 W 1200 to 2700 Electrical characteristic curves 0.4 0.8 1.2 1.6 2.0 Ta=25°C 0.2μA 0.4μA 0.6μA 0.8μA 1.0μA 1.2μA 1.4μA 1.6μA IB=0 1.8μA 2.0μA COLLECTOR CURRENT : IC (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter output characteristics ( ) 200 400 600 800 1000 02468 1 0 Ta=25°C Measured using pulse current. 0.2mA 0.4mA 0.6mA 0.8mA 1.0mA 1.2mA1.4mA 1.6mA 1.8mA 2.0mA IB=0mA COLLECTOR CURRENT : IC (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics ( ) 100 200 500 1000COLLECTOR CURRENT : IC (mA) BASE TO EMITTER VOLTAGE : VBE (V) Fig.3 Grounded emitter propagation characteristics VCE=3V Measured using pulse current. 25°C −25°C Ta=100°C 1 2 5 10 20 50 100 200 500 1000 100 200 500 1000 2000 5000 10000 Ta=25°C Measured using pulse current. DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( ) VCE=5V 1 2 5 10 20 50 100 200 500100 0 10000 5000 2000 1000 500 200 100 VCE=3V Measured using pulse current. DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current ( ) 25°C −25°C Ta=100°C 2000 1000 200 500 100 2 5 10 20 50 100 200 500 1000 Ta=25°C Measured using pulse current. IC/IB=100 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) COLLECTOR CURRENT : IC (mA) Fig.6 Collector-emitter saturation voltage vs. collector current ( ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) 2000 1000 200 500 100 2 5 10 20 50 100 200 5001000 IC/IB=25 Measured using pulse current. COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) Ta=100°C 25°C −25°C BASE SATURATION VOLTAGE : VBE(sat) (mV) COLLECTOR CURRENT : IC (mA) Fig.8 Base-emitter saturation voltage vs. collector current ( ) 1 2 5 10 20 50 100 200 500 1000 10000 5000 2000 1000 500 200 100 Ta=25°C Pulsed IC/IB=10 100 1 2 5 10 20 50 100 200 500100 0 10000 5000 2000 1000 500 200 100 BASE SATURATION VOLTAGE : VBE(sat) (mV) COLLECTOR CURRENT : IC (mA) Fig.9 Base-emitter saturation voltage vs. collector current ( ) Measured using pulse current. lC/lB=10 25°C 100°C Ta=−25°C
3/3 www.rohm.com ○c 2012 ROHM Co., Ltd. All rights reserved. 2012.01 - Rev.C Data Sheet 2SD2114K TRANSITION FREQUENCY : fT (MHz) EMITTER CURRENT : IE (mA) Fig.10 Gain bandwidth product vs. emitter current 10000 5000 2000 500 200 1000 100 Ta=25°C VCE=10V Measured using pulse current. 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.11 Collector output capacitance vs. collector-base voltage 100 200 500 1000 Ta=25°C f=1MHz IE=0A ON RESISTANCE : Ron (Ω) BASE CURRENT : IB (mA) Fig.12 Output-on resistance vs. base current 0.1 0.2 0.5 100 Ta=25°C f=1kHz Vi=100mV( rms) RL=1kΩ Ron measurement circuit Ron= ×RL vi−v0 RL=1kΩ IB Output Input 1kHz 100mV(rms) vi V
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