2SC5161

2SC5161 ROHM

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Rev.A 1/3 High voltage switching transistor (400V, 2A) 2SC5161 zFeatures 1) Low VCE(sat). VCE(sat)=0.15V (Typ.) (IC/IB=1A/0.2A) 2) High breakdown voltage. VCEO=400V 3) Fast switching. tf ≤1.0µs (IC=0.8A) zStructure Three-layer, diffused planar type NPN silicon transistor zExternal dimensions (Unit : mm) (1) Base (2) Collector (3) Emitter ROHM : CPT3 EIAJ : SC-63 −0.1 +0.2 −0.1 +0.2 +0.3 −0.1 2.3±0.22.3±0.2 0.65±0.1 0.9 0.75 1.0±0.2 0.5±0.1 9.5±0.5 5.5 1.5±0.3 2.5 1.5 2.3 0.5±0.1 6.5±0.2 5.1 C0.5 (3)(2)(1) 0.9 zAbsolute maximum ratings (Ta=25°C) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗ Single pulse Pw=10ms Parameter VCBO VCEO VEBO IC PC Tj Tstg 400 V V V A(DC) W W(Tc=25°C) 400 ICP A(Pulse)4 ∗ 150 −55 to +150 Symbol Limits Unit

Rev.A 2/3 zElectrical characteristics (Ta=25°C) Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Output capacitance Turn-on time Storage time Fall time Emitter-base breakdown voltage Base-emitter saturation voltage Transition frequency Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. 400 400 − ∗1 VI C=50µA IC=1mA IE=50µA VCB=400V VEB=5V VCE=5V, IC=0.1A IC/IB=1A/0.2A VCE=10V,IE=−0.5A,f=5MHz VCB=10V, IE=0A, f=1MHz V V µA µA V MHz pF tON −− 1I C=0.8A, RL=250Ω IB1=−IB2=0.08A VCC 200V Refer to measurement circuit diagram µs tstg −− 2.5 µs tf −− 1 µs Typ. Max. Unit Conditions VBE(sat) −− 1.5 IC/IB=1A/0.2AV ∗1 Measured using pulse current zPackaging specifications and hFE Package name Code Taping Basic ordering unit (pieces) TL 2500 B hFE 2SC5161 Type hFE values are classified as follows : Item B hFE 25 to 50 zElectrical characteristic curves Fig.1 Grounded emitter propagation characteristics COLLECTOR CURRENT : IC (A) BASE TO EMITTER VOLTAGE : VBE (V) 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 VCE=5V −25°C Ta=100°C 25°C Fig.2 Grounded emitter output characteristics COLLECTOR TO EMITTER VOLTAGE : VCE (V) 0.4 0.8 1.2 1.6 2.0 0246 8 1 COLLECTOR CURRENT : IC (A) Fig.3 DC current gain vs. collector current ( Ι ) DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (A) 1000 500 200 100 VCE=10V Ta=25°C IB=10mA 20mA 40mA 60mA 80mA 120mA 180mA Tc=25°C

Rev.A 3/3 Fig.4 DC current gain vs. collector current ( ΙΙ ) DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (A) 1000 500 200 100 Ta=25°C Ta=100°C 25°C −25°C Fig.5 Collector-emitter saturation voltage vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat ) (V) COLLECTOR CURRENT : IC (A) 0.5 0.2 0.1 0.01 0.02 0.05 IC/IB=10 Ta=25°C Fig.6 Collector-emitter saturation voltage vs. collector current Base-emitter saturation voltage vs. collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V) COLLECTOR CURRENT : IC (A) 0.5 0.2 0.1 0.05 0.02 0.01 −25°C 25°C 100°C IC/IB=5 Ta=−25°C 100°C 25°C Fig.7 Gain bandwidth product vs. emitter current TRANSITION FREQUENCY : fT (MHz) EMITTER CURRENT : IE (A) 100 200 500 1000 Ta=25°C VCE=10V Fig.8 Collector output capacitance vs. collector-base voltage 0.50.20.1 1 25 10 20 50 100 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) COLLECTOR TO BASE VOLTAGE : VCB (V) 1000 500 200 100 Ta=25°C f=1MHz IE=0A Fig.9 Switching time vs. collector current TURN ON TIME : ton (µs) STORAGE TIME : tstg (µs) FALL TIME : tf (µs) COLLECTOR CURRENT : IC (A) 0.01 0.02 0.05 0.1 0.2 0.5 tf ton tstg IC=10IB1=−10IB2 Pulse zSwitching characteristic measurement circuit Base current wave form Collector current wave form VIN PW IC 90% 10% ton tstg tf IC IB1 IB2 T.U.T. IB2 IB1 VCC 200V RL=250Ω PW 50µs duty cycle≤1%

Appendix1-Rev1.1 The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.