2SB1260 ROHM
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2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor (−80V, −1A) 2SB1260 / 2SB1181 / 2SB1241 !Features 1) High breakdown voltage and high current. BVCEO= −80V, IC=−1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733. !!!!Structure Epitaxial planar type PNP silicon transistor !!!!External dimensions (Units : mm) 2SB1260 (1) Base (2) Collector (3) Emitter ROHM : MPT3 EIAJ : SC-62 −0.1 +0.2 −0.05 +0.1 −0.1 +0.2 +0.2 −0.1 (3)(2)(1) 4.0 3.0±0.2 1.5±0.11.5±0.1 0.4 1.5 4.5 1.6±0.1 ±0.3 2SB1241 (1) Emitter (2) Collector (3) Base ROHM : ATV 1.0 6.8±0.2 2.5±0.2 1.05 0.45±0.1 2.54 2.54 0.5±0.1 0.9 4.4±0.214.5±0.5 (1) (2) (3) 0.65Max. (1) Base (2) Collector (3) Emitter ROHM : CPT3 EIAJ : SC-63 2SB1181 −0.1 +0.2 −0.1 +0.2 +0.3 −0.1 2.3±0.22.3±0.2 0.65±0.1 0.9 0.75 1.0±0.2 0.55±0.1 9.5±0.5 5.5 1.5±0.3 2.5 1.5 2.3 0.5±0.1 6.5±0.2 5.1 C0.5 (3)(2)(1) 0.9 * Denotes hFE Abbreviated symbol: BH∗ !!!!Absolute maximum ratings (Ta=25°C) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature *1 Single pulse, Pw=100ms *2 When mounted on a 40×40×0.7 mm ceramic board. *3 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger. Parameter VCBO VCEO VEBO IC PC Tj Tstg -80 V V V A(DC) W -80 I CP A(Pulse)-2 *1 0.5 2SB1260 2SB1241, 2SB1181 2SB1181 150 -55~+150 Symbol Limits Unit W(Tc=25˚C)
2SB1260 / 2SB1181 / 2SB1241 Transistors !!!!Electrical characteristics (Ta=25°C) Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) Cob Min. -80 -80 822SB1260, 2SB1181 2SB1241 2SB1260, 2SB1241 2SB1181 100 390 -0.4 VI C=-50µA IC=-1mA IE=-50µA VCB=-60V VEB=-4V VCE=-3V, IC=-0.1A IC/IB=-500mA/-50mA VCE=-10V, IE=50mA, f=30MHz VCB=-10V, IE=0A, f=1MHz V V µA µA 120 - 390 - V MHz fT - 100 - V CE=-5V, IE=50mA, f=30MHzMHz pF Typ. Max. Unit Conditions !!!!Packaging specifications and hFE Package Code Taping Basic ordering unit (pieces) 2500 2500 1000 PQR hFE 2SB1260 TL QR2SB1241 PQR2SB1181 - TV2 T100 Type hFE values are classified as follows : Item P Q R hFE 82~180 120~270 180~390 !!!!Electrical characteristic curves Fig.1 Grounded emitter propagation characteristics -0.1 -100 -1000 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) -0.8 -1.2 -1.6 -10 Ta=25˚C VCE=-5V Fig.2 Grounded emitter output characteristics -0.2 -0.8 -1.0 -0.4 -0.6 COLLECTOR CURRENT : IC (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Ta=25˚C -0.05mA IB=0mA -0.1mA -0.15mA -0.2mA -0.25mA -0.3mA -0.35mA -0.4mA -0.45mA Fig.3 DC current gain vs. collector current COLLECTOR CURRENT : IC (mA) DC CURRENT GAIN : hFE -1000 100 200 500 1000 VCE=-3V -1V Ta=25˚C
2SB1260 / 2SB1181 / 2SB1241 Transistors Fig.4 Collector-emitter saturation voltage vs. collector current -0.01 -0.02 -0.05 -0.1 -0.2 -0.5 Ta=25˚C IC/IB=20 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (mA) Fig.5 Gain bandwidth product vs. emitter current 1 2 5 10 20 50 100 200 500 1000 100 200 500 1000 EMITTER CURRENT : IE (mA) TRANSITION FREQUENCY : fT (MHz) Ta=25˚C VCE=-5V Fig.6 Collector output capacitance vs. collector-base voltage 100 200 500 1000 Ta=25˚C f=1MHz IE=0A COLLECTOR OUTPUT CAPACITANCE : Cob (pF) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig. 7 Emitter input capacitance vs. emitter-base voltage -0.1 -0.2 -0.5 -1 -2 200 1000 -5 -10 500 100 Ta=25˚C f=1MHz IC=0A EMITTER INPUT CAPACITANCE : Cib (pF) EMITTER TO BASE VOLTAGE : VEB (V) Fig. 8 Safe operating area (2SB1260) COLLECTOR CURRENT : IC (A) COLLECTOR TO EMITTER VOLTAGE : VCE (V) -0.5 -0.2 -0.1 -0.05 Ta=25˚C * Single nonrepetitive pulse IC Max. (Pulse) IC Max. P W =10msPW=100ms DC Fig.9 Safe operating area (2SB1241) 12 50.1 0.2 0.5 10 20 50 100200 5001000 COLLECTOR CURRENT : IC (A) COLLECTOR TO EMITTER VOLTAGE : VCE (V) 500m 200m 100m 50m 20m 10m Ta=25˚C * Single nonrepetitive pulse IC Max. (Pulse) P W=10msP W=100ms DC *Printed circuit board: 1.7 mm thick with collector copper plating at least 1 cm2. -0.01 -0.05 -0.02 -0.1 -0.5 -0.2 P W=100ms Ta=25˚C *Single nonrepetitive pulse COLLECTOR CURRENT : IC (A) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operating area (2SB1181)