2SA1759

2SA1759_1 ROHM

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Rev.B 1/3 High-voltage Switching Transistor (Camera strobes and Telephone, Power supply) (−400V, −0.1A) 2SA1759 zFeatures 1) High breakdown voltage. (BVCEO = −400V) 2) Low saturation voltage, typically VCE (sat)= −0.2V at IC / IB = −20mA / −2mA. 3) High switching speed, typically tf = 1µs at Ic =100mA. 4) Wide SOA (safe operating area). 5) Complements the 2SC4505. zDimensions (Unit : mm) MPT3 (1)Base (2)Collector (3)Emitter 1.5 0.4 1.6 0.5 3.0 0.40.4 1.51.5 (3)(2)(1) 4.5 0.5 4.0 2.51.0 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits −400 −400 −0.1 0.5 150 −55 to +150 Unit V V V A(DC) −0.2 A(Pulse) W ∗22 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗1 Single pulse, Pw=100ms ∗2 When mounted on a 40×40×0.7 mm ceramic board. zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob −400 −400 −0.2 −10 −10 −0.5 180 V V V µA µA V MHz pF I C= −50µA IC= −1mA IE= −50µA VCB= −400V VEB= −6V IC= −20mA, IB= −2mA VBE(sat) −− − 1.5 V I C= −20mA, IB= −2mA VCE= −10V , IC= −10mA VCE= −10V , IE=10mA , f=5MHz VCB= −10V , IE=0A , f=1MHz ton − 0.7 −µ sI C= −100mA RL=1.5kΩ tstg − 1.8 −µ sI B1= −IB2= −10mA tf − 1 −µ sV CC~ −150V Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Base-emitter saturation voltage Turn-on time Storage time Fall time

Rev.B 2/3 zPackaging specifications and hFE Type 2SA1759 MPT3 P 3000 T100 AH∗ ∗ Denotes hFE Package hFE Basic ordering unit (pieces) Code Marking zElectrical characteristics (Ta=25°C) 012345 −20 −40 −60 −80 −100 COLLECTOR CURRENT : IC (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Ground emitter output characteristics ( Ι ) Ta=25°C IB=0 −0.5mA −1mA −2mA −1.5mA −5mA −4.5mA −4mA −3.5mA −3mA −2.5mA 0 1 02 03 04 05 0 −20 −40 −60 −80 −100 COLLECTOR CURRENT : IC (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Ground emitter output characteristics ( ΙΙ ) IB=−0.1mA −0.2mA −0.3mA −0.4mA −0.5mA −0.6mA −0.7mA −0.8mA−0.9mA −1mA Ta=25°C COLLECTOR CURRENT : IC (mA) BASE TO EMITTER VOLTAGE : VBE (V) −0.5 −10 −20 −50 −100 −200 Ta=100 −25 VCE=−5V Fig.3 Ground emitter propagation characteristis DC CURRENT GAIN : hEF COLLECTOR CURRENT : IC (mA) 100 200 500 1000 Fig.4 DC current gain vs.collector current ( Ι ) Ta=25°C VCE=−10V 0.5 1 2 5 10 20 50 100 20 0 100 200 500 1000TRANSITION FREQUENCY : fT (MHz) EMITTER CURRENT : IE (mA) Fig.8 Gain bandwidth products vs. emitter current Ta=25°C VCE=−10V DC CURRENT GAIN : hEF COLLECTOR CURRENT : IC (mA) 100 200 500 1000 Fig.5 DC current gain vs.collector current ( ΙΙ ) VCE=−10V −25°C Ta=100°C 25°C −0.02 −0.05 −0.1 −0.2 −0.5 −10 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (mA) −0.01 Fig.6 Collector-emitter saturation voltage vs. collector current Ta=25°C IC/IB=20 100 200 500 1000COLLECTOR OUTPUT CAPACITANCE : Cob (pF) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.9 Collector output capacitance vs. collector-base voltage Ta=25°C f=1MHz IE=0A 0.5 1 2 5 10 20 50 100 200 COLLECTOR SATURATION VOLTAGE :VCE(sat) (V) BASE SATURATION VOLTAGE :VBE(sat) (V) COLLECTOR CURRENT : IC (mA) −0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −10 Fig.7 Collector-emitter saturation voltage Base-emitter saturation voltage vs. Collector current IC/IB=10V VBE(sat) VCE(sat) 100°C25°C −25°C25°C Ta=−25°C Ta=100°C

Rev.B 3/3 COLLECTOR CURRENT : IC (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) −10 −20 −50 −100 −200 −500 −1000 Fig.10 Safe operating area Ta=25°C (When mounted on a 40×40×0.7mm ceramic board) ∗Single nonrepetitive pulse Ic Max. (Pulse∗) DC Pw=10ms∗ 100ms∗ 0.001 0.01 0.1 0.1 100 1000 10000 100000 1 10 100 100 0 TRANSIENT THERMAL RESISTANCE : Rth(°C/W) PULSE WIDTH : Pw (s) Fig.11 Transient thermal resistance (1)When mounted on a 40×40×0.7mm ceramic board. (2)Unmounted (1) (2) VBB TUT RL=1.5kΩ VCC=−150V Collector current waveform Base current waveform IB2 90% 10% IB2 IC ton tf tstg Fig.12 Switching characteristics mesurement circuits

Appendix1-Rev1.1 The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.