W3EG264M72AFSRXXXD3 overview

W3EG264M72AFSRXXXD3 is a component documented by White Electronic Design. The PDF description identifies it as "1GB - 2x64Mx72 DDR SDRAM REGISTERED ECC w/PLL, FBGA." This guide condenses the most useful engineering information from the available PDF so that designers and sourcing teams can identify the checks that still need confirmation in the original document.

Datasheet snapshot

  • Manufacturer: White Electronic Design...
  • Part number: W3EG264M72AFSRXXXD3
  • Category: Memory
  • Datasheet length: 13 Pages

Key features noted in the PDF

  • JEDEC design specifi cations /square6 Phase-lock loop (PLL) clock driver to reduce loading /square6 Bi-directional data strobes (DQS) /square6 Differential clock inputs (CK & CK#).
  • Package height option: Low-profi le: 30.48mm (1.20")
  • Consult factory for availability of lead-free products. NOTE: Consult factory for availability of:
  • RoHS compliant products
  • Vendor source control options
  • Industrial temperature option OPERATING FREQUENCIES DDR333 @CL=2.5 DDR266 @CL=2 DDR266 @CL=2 DDR266 @CL=2.5 DDR200 @CL=2 Clock Speed 166MHz 133MHz 133MHz 133MHz 100MHz

Specifications and operating details

The following points were extracted from the PDF text. Check the associated conditions, notes and limits in the complete document before using a value in a design.

  • NOTE: Consult factory for availability of: RoHS compliant products Vendor source control options Industrial temperature option OPERATING FREQUENCIES DDR333 @CL=2.5 DDR266 @CL=2 DDR266 @CL=2 DDR266 @CL=2.5 DDR200 @CL=2 Clock Speed 166MHz 13.
  • DQ/DQS/DM/CKE/S relationships must be maintained as shown.NOTE: All resistor values are 22Ω unless otherwise specifi ed.
  • Functional operation should be restricted to recommended operating condition.
  • 4410 4050 4050 mA I DD3N Operating Current I DD1 One device bank; Active-Read-Precharge Burst = 2; tRC = tRC (MIN); tCK = tCK (MIN); lOUT = 0mA; Address and control inputs changing once per clock cycle.
  • 5220 4680 4680 mA I DD3N Precharge Power- Down Standby Current IDD2P All device banks idle; Power-down mode; tCK = tCK (MIN); CKE = (low) 144 144 144 rnA I DD2P Idle Standby Current I DD2F CS# = High; All device banks idle; tCK = tCK (MIN).
  • 1800 1620 1620 mA I DD2F Active Power-Down Standby Current IDD3P One device bank active; Power-Down mode; tCK (MIN); CKE = (low) 1080 900 900 mA I DD3P Active Standby Current I DD3N CS# = High; CKE = High; One device bank; Active-Precharge.
  • 2160 1800 1800 mA I DD3N Operating Current I DD4R Burst = 2; Reads; Continuous burst; One device bank active; Address and control inputs changing once per clock cycle; t CK = tCK (MIN); lOUT = 0mA.

Topics covered by the datasheet

The document includes sections related to:

  • DESCRIPTION
  • FEATURES
  • Revision History

Engineering review checklist

  • Confirm supply rails, clock limits, memory size, peripheral mapping and I/O voltage compatibility.
  • Check package pinout, boot configuration, programming interface and silicon-revision errata.
  • Budget decoupling, thermal margin, startup timing and firmware recovery behavior before release.

Always confirm values against the latest manufacturer-controlled datasheet, especially when qualifying a substitute or releasing a production BOM.

View the complete PDF and model record

Open the W3EG264M72AFSRXXXD3 datasheet and model details to review the complete PDF, document pages and available product information.

Source attribution

Adapted from the PDF associated with this DigiCamel model page.

Source model URL: https://www.digicamel.com/product.php?slug=w3eg264m72afsrxxxd3-white-electronic-design

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