TC58BVG0S3HBAI4 overview

TC58BVG0S3HBAI4 is a component documented by KIOXIA Corporation. The PDF description identifies it as "MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS." This guide condenses the most useful engineering information from the available PDF so that designers and sourcing teams can identify the checks that still need confirmation in the original document.

Datasheet snapshot

  • Manufacturer: KIOXIA Corporation
  • Part number: TC58BVG0S3HBAI4
  • Category: Logic IC
  • Datasheet length: 46 Pages

Specifications and operating details

The following points were extracted from the PDF text. Check the associated conditions, notes and limits in the complete document before using a value in a design.

  • Read Cycle Time 25 ns min (CL=50pF)  Program/Erase time Auto Page Program 330 s/page typ.
  • Auto Block Erase 2.5 ms/block typ.  Operating current Read (25 ns cycle) 30 mA max Program (avg.) 30 mA max Erase (avg.) 30 mA max Standby 50 A max  Package P-TFBGA63-0911-0.80CZ (Weight: 0.15 g typ.)  8bit ECC for each 528Bytes is imp.
  • MAX UNIT VCC Power Supply Voltage 2.7  3.6 V VIH High Level Input Voltage VCC x 0.8  VCC  0.3 V VIL Low Level Input Voltage 0.3*  VCC x 0.2 V * 2 V (pulse width lower than 20 ns) DC CHARACTERISTICS (Ta  -40 to 85°C, VCC  2.7 to 3.6.
  • MAX UNIT IIL Input Leakage Current VIN  0 V to VCC   10 A ILO Output Leakage Current VOUT  0 V to VCC   10 A ICCO1 Serial Read Current CE  VIL, IOUT  0 mA, tRC  25 ns   30 mA ICCO2 Programming Current    30 mA ICCO3 Era.
  • 2019-10-01C 6 © 2012-2019 KIOXIA Corporation AC TEST CONDITIONS PARAMETER CONDITION VCC: 2.7 to 3.6V Input level VCC-0.2V, 0.2V Input pulse rise and fall time 3 ns Input comparison level VCC / 2 Output data comparison level VCC / 2 Output.
  • MAX UNIT NOTES tPROG Average Programming Time  330 700 s N Number of Partial Program Cycles in the Same Page   4 (1) tBERASE Block Erasing Time  2.5 5 ms tR Memory Cell Array to Starting Address  40 120 s (1) Refer to Application N.
  • Data Output When tREH is long, output buffers are disabled by /RE=High, and the hold time of data output depend s on tRHOH (25ns MIN).

Topics covered by the datasheet

The document includes sections related to:

  • DESCRIPTION
  • FEATURES
  • Revision History

Engineering review checklist

  • Confirm supply rails, clock limits, memory size, peripheral mapping and I/O voltage compatibility.
  • Check package pinout, boot configuration, programming interface and silicon-revision errata.
  • Budget decoupling, thermal margin, startup timing and firmware recovery behavior before release.

Always confirm values against the latest manufacturer-controlled datasheet, especially when qualifying a substitute or releasing a production BOM.

View the complete PDF and model record

Open the TC58BVG0S3HBAI4 datasheet and model details to review the complete PDF, document pages and available product information.

Source attribution

Adapted from the PDF associated with this DigiCamel model page.

Source model URL: https://www.digicamel.com/product.php?slug=tc58bvg0s3hbai4-kioxia-corporation