T436432B-8S overview

T436432B-8S is a component documented by Taiwan Memory Technolog. The PDF description identifies it as "2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM." This guide condenses the most useful engineering information from the available PDF so that designers and sourcing teams can identify the checks that still need confirmation in the original document.

Datasheet snapshot

  • Manufacturer: Taiwan Memory Technolog...
  • Part number: T436432B-8S
  • Category: Memory
  • Datasheet length: 72 Pages

Key features noted in the PDF

  • 3.3V power supply
  • Clock cycle time : 5 / 5.5 / 6 / 7 / 8 / 10 ns
  • Internal four banks operation
  • LVTTL compatible with multiplexed address
  • All inputs are sampled at the positive going edge of system clock
  • Burst Read Single-bit Write operation
  • DQM for masking

Specifications and operating details

The following points were extracted from the PDF text. Check the associated conditions, notes and limits in the complete document before using a value in a design.

  • Revision: A SDRAM 2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM 3.3V power supply Clock cycle time : 5 / 5.5 / 6 / 7 / 8 / 10 ns Internal four banks operation LVTTL compatible with multiplexed address All inputs are sampled at the p.
  • The minimum whole value of CAS# Latency depends on the frequency of CLK.
  • The refresh operation must be performed 4096 times within 64ms.
  • The device may not remain in the Clock Suspend or PowerDown state longer than the refresh period (64ms) since the command does not perform any refresh operations.
  • Revision: A Absolute Maximum Rating Symbol Item Leaded Package Lead Free Package Unit Note VIN, VOUT Input, Output Voltage -1~4.6 V 1 VDD, VDDQ Power Supply Voltage - 1~4.6 V 1 TOPR Operating Temperature 0~70 °C 1 TSTG Storage Temperature.
  • Unit Note VDD Power Supply Voltage 3.0 3.3 3.6 V 2 VDDQ Power Supply Voltage(for I/O Buffer) 3.0 3.3 3.6 V 2 VIH LVTTL Input High Voltage 2.0 - V DDQ + 0.3 V 2 VIL LVTTL Input Low Voltage - 0.3 - 0.8 V 2 Capacitance (VDD = 3.3V, f = 1MHz.
  • Unit CI Input Capacitance - 4.5 pF CI/O Input/Output Capacitance - 6.5 pF Note: These parameters are periodically sampled and are not 100% TM Technology Inc.

Topics covered by the datasheet

The document includes sections related to:

  • FEATURES

Engineering review checklist

  • Confirm supply rails, clock limits, memory size, peripheral mapping and I/O voltage compatibility.
  • Check package pinout, boot configuration, programming interface and silicon-revision errata.
  • Budget decoupling, thermal margin, startup timing and firmware recovery behavior before release.

Always confirm values against the latest manufacturer-controlled datasheet, especially when qualifying a substitute or releasing a production BOM.

View the complete PDF and model record

Open the T436432B-8S datasheet and model details to review the complete PDF, document pages and available product information.

Source attribution

Adapted from the PDF associated with this DigiCamel model page.

Source model URL: https://www.digicamel.com/product.php?slug=t436432b-8s-taiwan-memory-technolog

T436432B-8S Taiwan Memory Technolog... Memory T436432B-8S datasheet T436432B-8S specifications T436432B-8S applications