IPB60R520CP overview

IPB60R520CP is a component documented by Infineon Technologies A. The PDF description identifies it as "CoolMOS Power Transistor Rev. 2.0 2008-02-15." This guide condenses the most useful engineering information from the available PDF so that designers and sourcing teams can identify the checks that still need confirmation in the original document.

Datasheet snapshot

  • Manufacturer: Infineon Technologies A...
  • Part number: IPB60R520CP
  • Category: IC
  • Datasheet length: 10 Pages

Key features noted in the PDF

  • Lowest figure-of-merit RON x Qg
  • Ultra low gate charge
  • Extreme dv/dt rated
  • High peak current capability
  • Qualified according to JEDEC1) for target applications
  • Pb-free lead plating; RoHS compliant CoolMOS CP is designed for:
  • Hard switching SMPS topologies Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C A T C=100 °C Pulse.

Specifications and operating details

The following points were extracted from the PDF text. Check the associated conditions, notes and limits in the complete document before using a value in a design.

  • 150 0.25 2.5 ±20 Value 6.8 4.3 V DS @ Tj,max 650 V R DS(on),max @ Tj = 25°C 0.520 Ω Q g,typ 24 nC Product Summary Type Package Marking IPB60R520CP PG-TO263 6R520P PG-TO263 Rev.
  • 2.0 page 1 2008-02-15 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous diode forward current I S A Diode pulse current2) I S,pulse 17 Reverse diode dv /dt 4) dv /dt 15 V/ns Parameter Sym.
  • Thermal characteristics Thermal resistance, junction - case R thJC - - 1.9 K/W R thJA leaded - - 62 R thJA SMD version, device on PCB, minimal footprint -- 6 2 SMD version, device on PCB, 6 cm 2 cooling area3) -3 5- Electrical characterist.
  • V R=400 V, I F=I S, di F/dt =100 A/µs 6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
  • 4) ISD=ID, di/dt≤400A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch.
  • Values V GS=0 V, V DS=100 V, f =1 MHz V DD=400 V, V GS=10 V, I D=3.8 A, R G=14.7Ω V DD=480 V, I D=3.8 A, V GS=0 to 10 V V GS=0 V, V DS=0 V to 480 V Rev.
  • 2.0 page 3 2008-02-15 P tot=f(T C) I D=f(V DS); T C=25 °C; D =0 parameter: t p 3 Max.

Topics covered by the datasheet

The document includes sections related to:

  • Features

Engineering review checklist

  • Confirm repetitive reverse voltage, average forward current, surge current and leakage at the intended temperature.
  • Check forward-voltage loss and reverse-recovery behavior at the actual current and switching frequency.
  • Review package thermal resistance, copper area, polarity marking and transient derating before layout release.

Always confirm values against the latest manufacturer-controlled datasheet, especially when qualifying a substitute or releasing a production BOM.

View the complete PDF and model record

Open the IPB60R520CP datasheet and model details to review the complete PDF, document pages and available product information.

Source attribution

Adapted from the PDF associated with this DigiCamel model page.

Source model URL: https://www.digicamel.com/product.php?slug=ipb60r520cp-infineon-technologies-a

IPB60R520CP Infineon Technologies A... IC IPB60R520CP datasheet IPB60R520CP specifications IPB60R520CP applications