GTVA262711FA-V2-R0 overview
GTVA262711FA-V2-R0 is a component documented by Cree, Inc. The PDF description identifies it as "Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 ??2690 MHz." This guide condenses the most useful engineering information from the available PDF so that designers and sourcing teams can identify the checks that still need confirmation in the original document.
Datasheet snapshot
- Manufacturer: Cree, Inc
- Part number: GTVA262711FA-V2-R0
- Category: IC
- Datasheet length: 9 Pages
Key features noted in the PDF
- GaN on SiC HEMT technology
- Input matched
- Typical pulsed CW performance: 10 µs pulse width, 10% duty cycle, 2690 MHz, 48 V - Output power at P3dB = 300 W - Efficiency = 62% - Gain = 19.1 dB
- Human Body Model Class 1B (per ANSI/ESDA/ JEDEC JS-001)
- Capable of handling 10:1 VSWR @48 V, 70 W (CW) output power
- Pb-free and RoHS-compliant
Specifications and operating details
The following points were extracted from the PDF text. Check the associated conditions, notes and limits in the complete document before using a value in a design.
- RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed production test fixture) VDD = 48 V, IDQ = 320 mA, POUT = 70 W avg, ƒ = 2690 MHz.
- 3GPP WDMA signal, 3.84 MHz channel bandwidth, peak/average = 10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 16 18 – dB Drain Efficiency hD 38 38.5 – % Adjacent Channel Power Ratio ACPR – –27.5 –25 dBc Output PAR @ 0.01%.
- 04.2, 2019-01-07 2GTVA262711FA DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage V GS = –8 V, ID = 32 mA V (BR)DSS 150 — — V Drain-source Leakage Current VGS = –8 V, VDS = 10 V I DSS — — 4..
- Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
- Thermal Characteristics Characteristic Symbol Value Unit Thermal Resistance CASE = 70 °C, 70 W (CW), VDD = 48 V, IDQ = 320 mA, RqJC 1.0 °C/W Type and Version Order Code Package Shipping GTVA262711FA V2 R0 GTVA262711FA-V2-R0 H-87265J-2 Tape.
- 04.2, 2019-01-07 6GTVA262711FA Reference circuit assembly diagram (not to scale) Reference Circuit tuned for 2620 to 2690 MHz DUT GTVA262711FA V2 Test Fixture Part No.
- LTN/GTVA262711FA-V2LTN/GTVA262711FA PCB Rogers 4350, 0.508 mm [.020"] thick, 2 oz.
Topics covered by the datasheet
The document includes sections related to:
- Features
- Description
- Ordering Information
- Revision History
Engineering review checklist
- Verify supply range, input common-mode range and output swing at the required load.
- Check offset, bias current, noise, bandwidth, slew rate and stability for the intended feedback network.
- Review supply decoupling, source impedance, capacitive-load behavior and thermal limits in the final layout.
Always confirm values against the latest manufacturer-controlled datasheet, especially when qualifying a substitute or releasing a production BOM.
View the complete PDF and model record
Open the GTVA262711FA-V2-R0 datasheet and model details to review the complete PDF, document pages and available product information.
Source attribution
Adapted from the PDF associated with this DigiCamel model page.
Source model URL: https://www.digicamel.com/product.php?slug=gtva262711fa-v2-r0-cree-inc