G60N100 overview
G60N100 is a component documented by Taiwan Semiconductor Co. The PDF description identifies it as "N-Channel IGBT with FRD." This guide condenses the most useful engineering information from the available PDF so that designers and sourcing teams can identify the checks that still need confirmation in the original document.
Datasheet snapshot
- Manufacturer: Taiwan Semiconductor Co...
- Part number: G60N100
- Category: IC
- Datasheet length: 9 Pages
Key features noted in the PDF
- 1000V NPT Trench Technology
- High Speed Switching
- Low Conduction Loss Block Diagram NPT Trench IGBT
Specifications and operating details
The following points were extracted from the PDF text. Check the associated conditions, notes and limits in the complete document before using a value in a design.
- Package Packing TSG60N100CE C0 TO-264 25pcs / Tube Absolute Maximum Rating (TA=25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Emitter Voltage VCES 1000 V Gate-Emitter Voltage VGES ±20 V Continuous Current TC =25 oC IC.
- 2/9 Version: B12 Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Case IGBT R ӨJC 0.6 oC/W DIODE 2.2 Thermal Resistance - Junction to Ambient R ӨJA 25 Electrical Specifications (Tc=25 oC unless otherwise not.
- 3/9 Version: B12 Electrical Specifications of the DIODE (Tc=25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Diode Forward Voltage I F = 60A, TJ=25 oC VFM -- 2.9 3.4 V Reverse Recovery Time IF = 60A, dl/dt=200A/us.
Topics covered by the datasheet
The document includes sections related to:
- Features
- Ordering Information
Engineering review checklist
- Confirm repetitive reverse voltage, average forward current, surge current and leakage at the intended temperature.
- Check forward-voltage loss and reverse-recovery behavior at the actual current and switching frequency.
- Review package thermal resistance, copper area, polarity marking and transient derating before layout release.
Always confirm values against the latest manufacturer-controlled datasheet, especially when qualifying a substitute or releasing a production BOM.
View the complete PDF and model record
Open the G60N100 datasheet and model details to review the complete PDF, document pages and available product information.
Source attribution
Adapted from the PDF associated with this DigiCamel model page.
Source model URL: https://www.digicamel.com/product.php?slug=g60n100-taiwan-semiconductor-co