BT169D overview
BT169D is a component documented by NXP Semiconductors. The PDF description identifies it as "Thyristor logic level September 1997 Rev 1.200." This guide condenses the most useful engineering information from the available PDF so that designers and sourcing teams can identify the checks that still need confirmation in the original document.
Datasheet snapshot
- Manufacturer: NXP Semiconductors
- Part number: BT169D
- Category: Logic IC
- Datasheet length: 7 Pages
Specifications and operating details
The following points were extracted from the PDF text. Check the associated conditions, notes and limits in the complete document before using a value in a design.
- UNIT thyristor in a plastic envelope, suitable for surface mounting, intended for use BT169 BW DW EW GW in general purpose switching and V DRM , Repetitive peak 200 400 500 600 V phase control applications.
- This VRRM off-state voltages device is intended to be interfaced IT(AV) Average on-state 0.5 0.5 0.5 0.5 A directly to microcontrollers, logic current integrated circuits and other low I T(RMS) RMS on-state current 0.8 0.8 0.8 0.8 A power.
- I TSM Non-repetitive peak 8888 A on-state current PINNING - SOT223 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 cathode 2 anode 3 gate tab anode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134).
- UNIT BDEG VDRM , VRRM Repetitive peak off-state - 200 1 4001 5001 6001 V voltages IT(AV) Average on-state current half sine wave; - 0.63 A Tsp ≤ 112 ˚C IT(RMS) RMS on-state current all conduction angles - 1 A ITSM Non-repetitive peak half.
- The rate of rise of current should not exceed 15 A/µs.
- UNIT R th j-sp Thermal resistance - - 15 K/W junction to solder point R th j-a Thermal resistance pcb mounted, minimum footprint - 156 - K/W junction to ambient pcb mounted; pad area as in fig:14 - 70 - K/W STATIC CHARACTERISTICS Tj = 25 ˚.
- UNIT I GT Gate trigger current V D = 12 V; IT = 10 mA; gate open circuit - 50 200 µA IL Latching current V D = 12 V; IGT = 0.5 mA; RGK = 1 kΩ -26 m A IH Holding current V D = 12 V; IGT = 0.5 mA; RGK = 1 kΩ -25 m A VT On-state voltage I T =.
Topics covered by the datasheet
The document includes sections related to:
- Application information
Engineering review checklist
- Check resistance value, tolerance, temperature coefficient and long-term stability over the operating range.
- Derate continuous power for ambient temperature and verify pulse or surge capability separately.
- Match the land pattern, termination finish and current-sense routing to the exact package option.
Always confirm values against the latest manufacturer-controlled datasheet, especially when qualifying a substitute or releasing a production BOM.
View the complete PDF and model record
Open the BT169D datasheet and model details to review the complete PDF, document pages and available product information.
Source attribution
Adapted from the PDF associated with this DigiCamel model page.
Source model URL: https://www.digicamel.com/product.php?slug=bt169d-nxp-semiconductors