BT152 overview
BT152 is a component documented by NXP Semiconductors. The PDF description identifies it as "Thyristors March 1997 Rev 1.200." This guide condenses the most useful engineering information from the available PDF so that designers and sourcing teams can identify the checks that still need confirmation in the original document.
Datasheet snapshot
- Manufacturer: NXP Semiconductors
- Part number: BT152
- Category: IC
- Datasheet length: 6 Pages
Specifications and operating details
The following points were extracted from the PDF text. Check the associated conditions, notes and limits in the complete document before using a value in a design.
- UNIT envelope, intended for use in applications requiring high BT152- 400R 600R 800R bidirectional blocking voltage V DRM , Repetitive peak off-state 450 650 800 V capability and high thermal cycling VRRM voltages performance.
- Typical applications IT(AV) Average on-state current 13 13 13 A include motor control, industrial and IT(RMS) RMS on-state current 20 20 20 A domestic lighting, heating and static ITSM Non-repetitive peak on-state 200 200 200 A switching.
- current PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 cathode 2 anode 3 gate tab anode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134).
- UNIT -400R -600R -800R VDRM Repetitive peak off-state - 450 1 6501 800 V voltages IT(AV) Average on-state current half sine wave; Tmb ≤ 103 ˚C - 13 A IT(RMS) RMS on-state current all conduction angles - 20 A ITSM Non-repetitive peak half s.
- The rate of rise of current should not exceed 15 A/µs.
- UNIT I GT Gate trigger current V D = 12 V; IT = 0.1 A - 3 32 mA IL Latching current V D = 12 V; IGT = 0.1 A - 25 80 mA IH Holding current V D = 12 V; IGT = 0.1 A - 15 60 mA VT On-state voltage I T = 40 A - 1.4 1.75 V VGT Gate trigger volta.
- UNIT dVD /dt Critical rate of rise of VDM = 67% VDRM(max) ; Tj = 125 ˚C; 200 300 - V/ µs off-state voltage exponential waveform gate open circuit tgt Gate controlled turn-on VD = VDRM(max) ; IG = 0.1 A; dIG /dt = 5 A/µs; - 2 - µs time I TM.
Topics covered by the datasheet
The document includes sections related to:
- Application information
Engineering review checklist
- Check resistance value, tolerance, temperature coefficient and long-term stability over the operating range.
- Derate continuous power for ambient temperature and verify pulse or surge capability separately.
- Match the land pattern, termination finish and current-sense routing to the exact package option.
Always confirm values against the latest manufacturer-controlled datasheet, especially when qualifying a substitute or releasing a production BOM.
View the complete PDF and model record
Open the BT152 datasheet and model details to review the complete PDF, document pages and available product information.
Source attribution
Adapted from the PDF associated with this DigiCamel model page.
Source model URL: https://www.digicamel.com/product.php?slug=bt152-nxp-semiconductors