BT151 overview
BT151 is a component documented by NXP Semiconductors. The PDF description identifies it as "Thyristors September 1997 Rev 1.200." This guide condenses the most useful engineering information from the available PDF so that designers and sourcing teams can identify the checks that still need confirmation in the original document.
Datasheet snapshot
- Manufacturer: NXP Semiconductors
- Part number: BT151
- Category: IC
- Datasheet length: 6 Pages
Specifications and operating details
The following points were extracted from the PDF text. Check the associated conditions, notes and limits in the complete document before using a value in a design.
- UNIT envelope, intended for use in applications requiring high BT151- 500R 650R 800R bidirectional blocking voltage V DRM , Repetitive peak off-state 500 650 800 V capability and high thermal cycling VRRM voltages performance.
- Typical applications IT(AV) Average on-state current 7.5 7.5 7.5 A include motor control, industrial and IT(RMS) RMS on-state current 12 12 12 A domestic lighting, heating and static ITSM Non-repetitive peak on-state 100 100 100 A switchin.
- current PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 cathode 2 anode 3 gate tab anode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134).
- UNIT -500R -650R -800R VDRM , VRRM Repetitive peak off-state - 500 1 6501 800 V voltages IT(AV) Average on-state current half sine wave; Tmb ≤ 109 ˚C - 7.5 A IT(RMS) RMS on-state current all conduction angles - 12 A ITSM Non-repetitive pea.
- The rate of rise of current should not exceed 15 A/µs.
- UNIT I GT Gate trigger current V D = 12 V; IT = 0.1 A - 2 15 mA IL Latching current V D = 12 V; IGT = 0.1 A - 10 40 mA IH Holding current V D = 12 V; IGT = 0.1 A - 7 20 mA VT On-state voltage I T = 23 A - 1.4 1.75 V VGT Gate trigger voltag.
- UNIT dVD /dt Critical rate of rise of VDM = 67% VDRM(max) ; Tj = 125 ˚C; off-state voltage exponential waveform; Gate open circuit 50 130 - V/ µs R GK = 100 Ω 200 1000 - V/ µs tgt Gate controlled turn-on ITM = 40 A; VD = VDRM(max) ; IG = 0.
Topics covered by the datasheet
The document includes sections related to:
- Application information
Engineering review checklist
- Check resistance value, tolerance, temperature coefficient and long-term stability over the operating range.
- Derate continuous power for ambient temperature and verify pulse or surge capability separately.
- Match the land pattern, termination finish and current-sense routing to the exact package option.
Always confirm values against the latest manufacturer-controlled datasheet, especially when qualifying a substitute or releasing a production BOM.
View the complete PDF and model record
Open the BT151 datasheet and model details to review the complete PDF, document pages and available product information.
Source attribution
Adapted from the PDF associated with this DigiCamel model page.
Source model URL: https://www.digicamel.com/product.php?slug=bt151-nxp-semiconductors