BT150 overview
BT150 is a component documented by NXP Semiconductors. The PDF description identifies it as "Thyristors logic level October 1997 Rev 1.300." This guide condenses the most useful engineering information from the available PDF so that designers and sourcing teams can identify the checks that still need confirmation in the original document.
Datasheet snapshot
- Manufacturer: NXP Semiconductors
- Part number: BT150
- Category: Logic IC
- Datasheet length: 6 Pages
Specifications and operating details
The following points were extracted from the PDF text. Check the associated conditions, notes and limits in the complete document before using a value in a design.
- UNIT thyristors in a plastic envelope, intended for use in general purpose BT150- 500R 600R 800R switching and phase control V DRM , Repetitive peak off-state 500 600 800 V applications.
- These devices are V RRM voltages intended to be interfaced directly to IT(AV) Average on-state current 2.5 2.5 2.5 A microcontrollers, logic integrated IT(RMS) RMS on-state current 4 4 4 A circuits and other low power gate ITSM Non-repetit.
- current PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 cathode 2 anode 3 gate tab anode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134).
- UNIT -500R -600R -800R VDRM , VRRM Repetitive peak off-state - 500 1 6001 800 V voltages IT(AV) Average on-state current half sine wave; Tmb ≤ 113 ˚C - 2.5 A IT(RMS) RMS on-state current all conduction angles - 4 A ITSM Non-repetitive peak.
- The rate of rise of current should not exceed 15 A/µs.
- UNIT I GT Gate trigger current V D = 12 V; IT = 0.1 A - 15 200 µA IL Latching current V D = 12 V; IGT = 0.1 A - 0.17 10 mA IH Holding current V D = 12 V; IGT = 0.1 A - 0.10 6 mA VT On-state voltage I T = 5 A - 1.23 1.8 V VGT Gate trigger v.
- UNIT dVD /dt Critical rate of rise of VDM = 67% VDRM(max) ; Tj = 125 ˚C; - 50 - V/ µs off-state voltage exponential waveform; R GK = 100 Ω tgt Gate controlled turn-on ITM = 10 A; VD = VDRM(max) ; IG = 5 mA; - 2 - µs time dI G /dt = 0.2 A/µ.
Topics covered by the datasheet
The document includes sections related to:
- Application information
Engineering review checklist
- Check resistance value, tolerance, temperature coefficient and long-term stability over the operating range.
- Derate continuous power for ambient temperature and verify pulse or surge capability separately.
- Match the land pattern, termination finish and current-sense routing to the exact package option.
Always confirm values against the latest manufacturer-controlled datasheet, especially when qualifying a substitute or releasing a production BOM.
View the complete PDF and model record
Open the BT150 datasheet and model details to review the complete PDF, document pages and available product information.
Source attribution
Adapted from the PDF associated with this DigiCamel model page.
Source model URL: https://www.digicamel.com/product.php?slug=bt150-nxp-semiconductors