BT134-600E overview
BT134-600E is a component documented by NXP Semiconductors. The PDF description identifies it as "Triacs sensitive gate August 1997 Rev 1.200." This guide condenses the most useful engineering information from the available PDF so that designers and sourcing teams can identify the checks that still need confirmation in the original document.
Datasheet snapshot
- Manufacturer: NXP Semiconductors
- Part number: BT134-600E
- Category: Logic IC
- Datasheet length: 6 Pages
Specifications and operating details
The following points were extracted from the PDF text. Check the associated conditions, notes and limits in the complete document before using a value in a design.
- UNIT envelope, intended for use in applications requiring high BT134- 500 600 800 bidirectional transient and blocking BT134- 500F 600F 800F voltage capability and high thermal BT134- 500G 600G 800G cycling performance.
- Typical V DRM Repetitive peak off-state 500 600 800 V applications include motor control, voltages industrial and domestic lighting, I T(RMS) RMS on-state current 4 4 4 A heating and static switching.
- I TSM Non-repetitive peak on-state 25 25 25 A current PINNING - SOT82 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 main terminal 1 2 main terminal 2 3 gate tab main terminal 2 LIMITING VALUES Limiting values in accordance with the Absolute M.
- UNIT -500 -600 -800 VDRM Repetitive peak off-state - 500 1 6001 800 V voltages IT(RMS) RMS on-state current full sine wave; Tmb ≤ 107 ˚C - 4 A ITSM Non-repetitive peak full sine wave; Tj = 25 ˚C prior to on-state current surge t = 20 ms.
- The rate of rise of current should not exceed 3 A/µs.
- UNIT R th j-mb Thermal resistance full cycle - - 3.0 K/W junction to mounting base half cycle - - 3.7 K/W R th j-a Thermal resistance in free air - 100 - K/W junction to ambient STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYM.
- UNIT dVD /dt Critical rate of rise of VDM =67% VDRM(max) ; 100 50 200 250 - V/ µs off-state voltage T j = 125 ˚C; exponential waveform; gate open circuit dV com /dt Critical rate of change of VDM = 400 V; Tj = 95 ˚C; - - 10 50 - V/ µs comm.
Topics covered by the datasheet
The document includes sections related to:
- Application information
Engineering review checklist
- Check resistance value, tolerance, temperature coefficient and long-term stability over the operating range.
- Derate continuous power for ambient temperature and verify pulse or surge capability separately.
- Match the land pattern, termination finish and current-sense routing to the exact package option.
Always confirm values against the latest manufacturer-controlled datasheet, especially when qualifying a substitute or releasing a production BOM.
View the complete PDF and model record
Open the BT134-600E datasheet and model details to review the complete PDF, document pages and available product information.
Source attribution
Adapted from the PDF associated with this DigiCamel model page.
Source model URL: https://www.digicamel.com/product.php?slug=bt134-600e-nxp-semiconductors