BFG540 overview
BFG540 is a component documented by NXP Semiconductors. The PDF description identifies it as "NPN 9 GHz wideband transistor 2000 May 23." This guide condenses the most useful engineering information from the available PDF so that designers and sourcing teams can identify the checks that still need confirmation in the original document.
Datasheet snapshot
- Manufacturer: NXP Semiconductors
- Part number: BFG540
- Category: IC
- Datasheet length: 16 Pages
Key features noted in the PDF
- High power gain
- Low noise figure
- High transition frequency
- Gold metallization ensures excellent reliability.
Specifications and operating details
The following points were extracted from the PDF text. Check the associated conditions, notes and limits in the complete document before using a value in a design.
- handbook, 2 columns Top view MSB035 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG540; BFG540/X; BFG540/XR QUICK REFERENCE DATA LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134).
- UNIT VCBO collector-base voltage open emitter −− 20 V VCES collector-emitter voltage R BE =0 −− 15 V IC DC collector current −− 120 mA Ptot total power dissipation T s ≤ 60 °C; note 1 −− 400 mW hFE DC current gain I C = 40 mA; VCE =8V ; Tj.
- UNIT VCBO collector-base voltage open emitter − 20 V VCES collector-emitter voltage R BE =0 − 15 V VEBO emitter-base voltage open collector − 2.5 V IC DC collector current − 120 mA Ptot total power dissipation T s ≤ 60 °C; note 1 − 400 mW.
- V CE = 8 V; IC = 40 mA; RL =5 0Ω ; Tamb =2 5°C; fp = 900 MHz; fq = 902 MHz; measured at f(2p− q) = 898 MHz and f(2q− p) = 904 MHz.
- dim = −60 dB (DIN 45004B); IC = 40 mA; VCE = 8 V; ZL =Z S =7 5Ω ; Tamb =2 5°C; Vp =V O ; Vq =V O −6 dB; Vr =V O −6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz; measured at f( p+q− r)= 793.25 MHz.
- IC = 40 mA; VCE = 8 V; VO = 275 mV; Tamb =2 5°C; fp = 250 MHz; fq = 560 MHz; measured at f(p + q)= 810 MHz.
- UNIT ICBO collector cut-off current I E = 0; VCB =8V −− 50 nA hFE DC current gain I C = 40 mA; VCE = 8 V 60 120 250 C e emitter capacitance I C =ic = 0; VEB = 0.5 V; f = 1 MHz − 2 − pF C c collector capacitance I E =ie = 0; VCB =8V ; f=1M.
Topics covered by the datasheet
The document includes sections related to:
- FEATURES
- DESCRIPTION
Engineering review checklist
- Verify capacitance tolerance, rated voltage, temperature range and any DC-bias derating.
- Check ESR, ripple-current capability, lifetime and polarity requirements under worst-case conditions.
- Confirm package dimensions, land pattern and reflow or mounting limits for the selected ordering code.
Always confirm values against the latest manufacturer-controlled datasheet, especially when qualifying a substitute or releasing a production BOM.
View the complete PDF and model record
Open the BFG540 datasheet and model details to review the complete PDF, document pages and available product information.
Source attribution
Adapted from the PDF associated with this DigiCamel model page.
Source model URL: https://www.digicamel.com/product.php?slug=bfg540-nxp-semiconductors