BDP949 overview
BDP949 is a component documented by Siemens Semiconductor G. The PDF description identifies it as "NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain)." This guide condenses the most useful engineering information from the available PDF so that designers and sourcing teams can identify the checks that still need confirmation in the original document.
Datasheet snapshot
- Manufacturer: Siemens Semiconductor G...
- Part number: BDP949
- Category: Driver IC
- Datasheet length: 4 Pages
Specifications and operating details
The following points were extracted from the PDF text. Check the associated conditions, notes and limits in the complete document before using a value in a design.
- DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 mA, BDP 947 IC = 10 mA, IB = 0 mA, BDP 949 V(BR)CEO V Collector-base breakdown voltage IC = 100 µA, IB = 0 , BDP 947 IC = 100 µA, IB = 0 , BDP 949 V(BR)CBO Base-emit.
Engineering review checklist
- Check resistance value, tolerance, temperature coefficient and long-term stability over the operating range.
- Derate continuous power for ambient temperature and verify pulse or surge capability separately.
- Match the land pattern, termination finish and current-sense routing to the exact package option.
Always confirm values against the latest manufacturer-controlled datasheet, especially when qualifying a substitute or releasing a production BOM.
View the complete PDF and model record
Open the BDP949 datasheet and model details to review the complete PDF, document pages and available product information.
Source attribution
Adapted from the PDF associated with this DigiCamel model page.
Source model URL: https://www.digicamel.com/product.php?slug=bdp949-siemens-semiconductor-g