8N80 overview
8N80 is a component documented by Unisonic Technologies. The PDF description identifies it as "800V N-CHANNEL MOSFET." This guide condenses the most useful engineering information from the available PDF so that designers and sourcing teams can identify the checks that still need confirmation in the original document.
Datasheet snapshot
- Manufacturer: Unisonic Technologies
- Part number: 8N80
- Category: IC
- Datasheet length: 5 Pages
Specifications and operating details
The following points were extracted from the PDF text. Check the associated conditions, notes and limits in the complete document before using a value in a design.
- The UTC 8N80 is generally applied in high efficiency switch mode power supplies. FEATURES * Typically 35 nC Low Gate Charge * 8A, 800V, RDS(on) = 1.55Ω @VGS = 10 V * Typically 13 pF Low Crss * Improved dv/dt Capability * Fast Switching S.
- L = 25mH, I AS = 8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3.
- I SD ≤ 8A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4.
- Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2.
Engineering review checklist
- Confirm repetitive reverse voltage, average forward current, surge current and leakage at the intended temperature.
- Check forward-voltage loss and reverse-recovery behavior at the actual current and switching frequency.
- Review package thermal resistance, copper area, polarity marking and transient derating before layout release.
Always confirm values against the latest manufacturer-controlled datasheet, especially when qualifying a substitute or releasing a production BOM.
View the complete PDF and model record
Open the 8N80 datasheet and model details to review the complete PDF, document pages and available product information.
Source attribution
Adapted from the PDF associated with this DigiCamel model page.
Source model URL: https://www.digicamel.com/product.php?slug=8n80-unisonic-technologies