ZXMS82120S14PQ-13 | DigiCamel IC Datasheet

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ZXMS82120S14PQ DIODES | Alldatasheet

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Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
PDF pages: 34

Technical content

Features

 Reverse Battery Protection Using External Components  Voltage Dependent Current Limiting  Overtemperature Protection with Auto-Restart  Overvoltage Protection Including Load Dump  Stable Undervoltage Protection  ESD Protection  Loss of Ground Protection with External Components  Enhanced Short-Circuit Protection Diagnostic Functions  Proportional Load Current-Sense Output  Linear Voltage Drop Regulation to Maintain Sense Accuracy Even at Very Low Load Currents  Enabled by Logic Input  Channel Selected by Logic Input  Defined Temperature and Current Dependency  Open-Load Detection  Using Load Current-Sense in ON State  Using Output Voltage Detection in OFF State  Defined Fault Signal in Case of Overload Operation, Overtemperature, or Short-Circuit and Open-Load in OFF State Miscellaneous  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The ZXMS82120S14PQ is suitable for automotive applications requiring specific change control; this part is AEC-Q100 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. https://www.diodes.com/quality/product-definitions/ Pin Assignment (Top View) SO-14EP

Applications

 High-side switching with diagnostic feedback for:  12V grounded loads  Resistive, inductive and capacitive loads  Suitable for high inrush current loads  Incandescent lamps (P10W), motors, LEDs, etc.  Compact low power replacement for:  Relays, fuses and discrete circuits Summary Specifications Parameter Symbol Rating Operating Voltage VS 5V to 28V Maximum Supply Voltage VS(LD) 41V Maximum ON Resistance, TJ = +150°C RDS(ON) 240mΩ Nominal Load Current IL(NOM) 2.5A Typical Current Sense Ratio KILIS 550 Minimum Current Limitation IL5(SC) 10A Maximum Standby Current, TJ = +25°C IS(OFF) 0.5µA Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Green VS (EP)

1 GND Ground or negative supply

2 IN0 Input channel 0, activates output channel 0

3 DEN Diagnostic enable, allows common connection of the IS pin with multiple devices

4 IS Diagnostic output, provides an analog sense current proportional to the load current under normal

5 DSEL Input to select which channel to be diagnosed

6 IN1 Input channel 1, activates output channel 1

Table 1. Pin Description Figure 2. Functional Block Diagram of ZXMS82120S14PQ

Document number: DS45113 Rev. 4 - 2 4 of 34 www.diodes.com August 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. ZXMS82120S14PQ Absolute Maximum Ratings (Notes 4, 5) (@TJ = +25°C, unless otherwise specified.) Symbol Parameter Ratings Unit Conditions Min Max Supply Voltage VS Supply voltage -0.3 28 V — VS(REV) Reverse supply voltage 0 16 V RL ≥ 12Ω, RGND = 150Ω Tamb = +25°C, t < 2 mins VS(SC) Supply voltage for short-circuit protection (Note 6) 0 24 V — VS(LD) Supply voltage for load-dump protection (ISO 7637) — 41 V RIN = 2Ω, RL = 12Ω Interface Pins VIN IN pins voltage -0.3 6 V — — 7 V t < 2 mins IIN Current in IN pins -2 2 mA — VDEN DEN pin voltage -0.3 6 V — — 7 V t < 2 mins IDEN Current in DEN pin -2 2 mA — VDSEL DSEL pin voltage -0.3 6 V — — 7 V t < 2 mins IDSEL Current in DSEL pin -25 50 mA — VIS IS pin voltage -0.3 VS V — IIS Current in IS pin -25 50 mA — Output Stage IL Load current (Note 7) — Self-limited A — PTOT Power dissipation — 1.8 W Tamb = +85°C, TJ < +150°C EAS Energy dissipation (single pulse, one channel) — 15 mJ VS = 13.5V, IL = 2A TJ = +150°C VDS VS to OUT pin voltage — 41 V — NRSC Repetitive short-circuit capability (Note 8) — 300 kcyc tON = 300ms Current IGND Current in GND pin -10 10 mA — -150 20 mA t < 2 mins Temperature TJ Junction temperature -40 +150 °C — TSTG Storage temperature -55 +150 °C — Electrostatic Discharge VESD(HBM) ESD capability HBM (all pins) -2 2 kV EIA/JESD 22-A 114B ESD capability HBM OUT to GND and VS shorted -4 4 kV VESD(CDM) ESD capability CDM -0.75 0.75 kV AEC-Q100-011 Notes: 4. Stresses greater than those listed under Absolute Maximum Ratings can cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to Absolute Maximum Ratings for extended periods can affect device reliability. 5. Not subject to production test, guaranteed by design. 6. Short-circuit protection is outside normal operation and is limited to single pulse and allows combinations of resistance and inductance. 7. Current limit is a protection feature and operation in current limitation, e.g. with short-circuit loads, is outside the normal operation range . 8. Repetitive short-circuit protection characterisation also carried out according to AEC-Q100-012 at 14V.

Document number: DS45113 Rev. 4 - 2 5 of 34 www.diodes.com August 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. ZXMS82120S14PQ Package Thermal Data Symbol Parameter Min Typ Max Unit RθJS Thermal resistance, junction-to-soldering point (Note 5) — 4 — °C/W RθJA Thermal resistance, junction-to-ambient mounted on PCB Both channels active (Notes 5, 9) — 47 — °C/W Note: 9. Device mounted on vertical PCB, 2” x 2” x 1.6mm, FR4 with 2oz copper for all connections. Recommended Operating Conditions Symbol Parameter Min Max Unit VS(NOM) Normal operating voltage (Note 10) 8 18 V VS(OP) Extended operating voltage (Note 11) 5 28 V Notes: 10. For normal operation and protection features. 11. Operation across an extended range is possible but is load dependant – device may have reduced protection against faulty (overload or short-circuit) loads. Operational Electrical Characteristics (Unless otherwise specified: -40°C < TJ < +150°C; typical values based on TJ = +25°C) Symbol Parameter Conditions Min Typ Max Unit General VS(OP) Extended operating voltage VIN = 4.5V, VDS < 0.5V 5 13.5 28 V VS(OP_MIN) Undervoltage restart VIN = 4.5V, RL = 12Ω 3.8 4.2 5 V VS(UV) Undervoltage shutdown VIN = 4.5V, VDEN = 0V RL = 12Ω 3 3.3 4.1 V VS(UV_HYS) Undervoltage hysteresis — — 0.85 — V IGND Operating current One channel active VIN = VDEN = 5.5V, VS = 18V Device in RDS(ON) — 2.5 6 mA Operating current Both channels active — 3.5 8 mA IS(OFF) Standby current VIN and VDEN floating VOUT = 0V, VS = 18V TJ ≤ +85°C — 0.1 0.5 µA VIN and VDEN floating VOUT = 0V, VS = 18V TJ = +150°C — 2 20 µA IS(OFF_DEN) Standby current with diagnostic pin active VIN floating, VOUT = 0V VS = 18V, VDEN = 5.5V — 1 — mA

Document number: DS45113 Rev. 4 - 2 9 of 34 www.diodes.com August 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. ZXMS82120S14PQ Maximum Load Inductance Stored inductive load ring-OFF energy is dissipated in the MOSFET during switching and load ring-OFF clamping. Additional energy is also supplied to the system by the VS supply until the load current IL reaches zero. This causes a temporary rise in MOSFET temperature after turn-OFF begins. The temperature reached depends on the starting temperature, thermal environment, load current I L, load inductance L L, load resistance R L and supply voltage VS. Inverse Current Capability In the ON-state the device will remain on if the output current becomes inverse until or unless the inverse current becomes high enough to create a -VDS approaching body diode conduction. During inverse current conduction, IL(INV), the IS sense output will be zero. If body diode conduction occurs all functions are disabled or unspecified until the inverse current becomes very small. If inverse current is present in the OFF -state body diode conduction occurs and all functions are disabled or unspecified. When inverse current is removed or becomes very small then turn-ON and normal function become possible. Power Electrical Characteristics (Unless otherwise specified: 8V < VS < 18V, -40°C < TJ < +150°C; typical values based on VS = 13.5V, TJ = +25°C) Symbol Parameter Conditions Min Typ Max Unit Output Characteristics RDS(ON) ON-state resistance per channel VIN = 4.5V, IL = 2A TJ = +150°C — 200 240 mΩ VIN = 4.5V, IL = 2A TJ = +25°C — 100 — mΩ IL(NOM) Nominal load current One channel active (Note 12) Tamb = +85°C, TJ < +150°C — 2.5 — A Nominal load current Both channels active (Note 12) — 2 — A VDS(NL) Voltage drop regulation at low IL IL = 30mA — 12 25 mV VDS(AZ) Output clamp voltage IL = 20mA 41 47 53 V IL(OFF) Output leakage current per channel VIN floating, VOUT = 0V VIN floating, VOUT = 0V TJ = +150°C — 1 10 µA IL(INV) Inverse output current (Note 13) VS < VOUT — 2 — A Timings dV/dtON Slew rate ON, 30% to 70% VS RL = 12Ω, VS = 13.5V 0.1 0.25 0.5 V/µs dV/dtOFF Slew rate OFF, 70% to 30% VS 0.1 0.45 0.7 V/µs tON Turn-ON time to 90% VS 30 90 230 µs tOFF Turn-OFF time to 10% VS 30 170 230 µs tON(DELAY) Turn-ON delay to 10% VS 10 25 100 µs tOFF(DELAY) Turn-OFF delay to 90% VS 10 95 150 µs EON Switch ON energy RL = 12Ω, VS = 18V VOUT = 90% VS — 0.4 — mJ EOFF Switch OFF energy RL = 12Ω, VS = 18V VOUT = 10% VS — 0.3 — mJ Notes: 12. Device mounted on vertical 50mm x 50mm x 1.5mm FR4 single-sided PCB with 6cm² 2oz copper in free air. 13. ON-state reverse conduction, functional test only.

© 2023 Copyright Diodes Incorporated. All Rights Reserved. the same clamp described under the earlier section Output Inductive Load Clamp. ground and logic inputs has to be limited by external resistor components. No operating functions are available in this condition. dynamic (∆TJ(SW)) and an absolute (TJ(SC)) temperature sensor. Figure 12 gives a sketch of overload protection. reset level. Each cycle causes the absolute temperature to increase a little. to cycle to TJ(SC) as long as the fault condition remains. The IS pin outputs IIS(FAULT) during load current limitation, during dynamic overtemperature cycling and absolute overtemperature cycling. channel can be monitored on the IS pin it is not recommended to use both channels connected in parallel. Figure 12. Overload Protection Diagram

During reverse battery the body diode will conduct with a voltage drop V DS(REV).
Functional test only at TJ = +150°C.

upon which channel is selected by the DSEL pin. In the case where it is disabled by the DEN pin it becomes high impedance. Table 2. Diagnostic Truth Table IIS(FAULT) greater than normal sense currents for normal loads.

A low resistance short between OUT and VS will reduce the output current, IL and therefore reduce the analog sense current, IIS.
With external pullup resistor.
H = high level; L = low level; Z = high impedance, voltage depends on external circuit; X = don’t care .

Document number: DS45113 Rev. 4 - 2 17 of 34 www.diodes.com August 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. ZXMS82120S14PQ Diagnostic Electrical Characteristics (Unless otherwise specified: 8V < VS < 18V, -40°C < TJ < +150°C; typical values based on VS = 13.5V, TJ = +25°C) Symbol Parameter Conditions Min Typ Max Unit Open-Load Detection VDS(OL) Open load OFF state detection voltage VIN = 0V, VDEN = 4.5V 4 4.9 6 V IL(OL) Open load ON state detection current VIN = VDEN = 4.5V IIS(OL) = 22µA 5 — 30 mA Current Sense Pin IIS(DIS) Current sense leakage current VIN = 4.5V, VDEN = 0V IL = 2A — — 1 µA VIS(SAT) VS to IS saturation voltage VIN = 0V, VDEN = 4.5V IIS = 6mA, VOUT = VS > 10V — — 3 V IIS(FAULT) Current sense under fault conditions VIN = VIS = 0V, VDEN = 4.5V VOUT = VS > 10V 6 15 35 mA VIS(AZ) VS to IS clamp voltage IIS = 5mA 41 47 53 V Load Current Sense KILIS0 Sense current ratio IL = 50mA VIN = VDEN = 4.5V -30% 610 +30% — KILIS1 Sense current ratio IL = 0.25A -21% 590 +21% — KILIS2 Sense current ratio IL = 0.5A -9% 570 +9% — KILIS3 Sense current ratio IL = 1A -6% 560 +6% — KILIS4 Sense current ratio IL = 2A -5% 550 +5% — ∆KILIS Sense current ratio variation IL = 1A versus IL = 0.5A -6% 0 +6% — Diagnostic Timings tsIS(ON) Current sense settling time to 90% IIS after IN and DEN high VS = 13.5V IL = 1A, RIS = 1.2kΩ — — 250 µs tsIS(DEN) Current sense settling time to 90% IIS after DEN high VS = 13.5V, VIN = 4.5V IL = 1A, RIS = 1.2kΩ — — 20 µs tsIS(LC) Current sense settling time to 90% IIS after load current change VS = 13.5V, VIN = VDEN = 4.5V IL = 0.5A to 1A, RIS = 1.2kΩ — — 20 µs tsIS(OL_ FAULT) Diagnostic fault current settling time to 90% IIS(FAULT) after DEN high with OFF state open- load condition VIN = 0V, VOUT = VS = 13.5V RIS = 1.2kΩ — — 150 µs tsIS(FAULT) Diagnostic fault current settling time to 90% IIS(FAULT) after IN and DEN high with overload condition VDS = 5V, RIS = 1.2kΩ — — 250 µs tsIS(OT_ blank) Diagnostic fault current off delay time to 90% IIS(FAULT) after overtemperature condition returning to normal operation (Note 22) VIN = VDEN = 4.5V RIS = 1.2kΩ — 150 — µs tsIS(OFF) Current sense fall time to < 50% IIS after DEN low VIN = 4.5V, IL = 1A RIS = 1.2kΩ — — 30 µs tsIS(CHC) Current sense settling time to 90% IIS after DSEL high VS = 13.5V, VIN0 = VIN1 = 4.5V VDEN = 4.5V IL0 = 1A, IL1 = 0.5A RIS = 1.2kΩ — — 20 µs Note: 22. Not subject to production test, guaranteed by design.

© 2023 Copyright Diodes Incorporated. All Rights Reserved. on the IN pin. Figure 15 shows the electrical equivalent circuit. Figure 15. Input Pin Circuitry The DEN and DSEL pins have the same circuitry as the IN pin.

© 2023 Copyright Diodes Incorporated. All Rights Reserved. a certain functionality, condition or quality of the device. Figure 39. Application Circuit Diagram Note: 23. This is a simplified example of an application circuit. The function must be verified in the real application. Table 4. Bill of Materials

Document number: DS45113 Rev. 4 - 2 32 of 34 www.diodes.com August 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. ZXMS82120S14PQ Ordering Information (Note 24) Part Number Package Marking Reel Size (inches) Tape Width (mm) Packing Qty. Carrier ZXMS82120S14PQ-13 SO-14EP ZXMS82120 13 16 2500 Reel Note: 24. For packaging details, go to our website at https://www.diodes.com/design/support/pa ckaging/diodes-packaging/. Marking Information ZXMS82120 YYWW : Manufacturer’s Code Marking ZXMS82120: Product Type Marking Code YY or YY: Year (ex: 23 = 2023) WW or WW: Week 01 to 52; 52 represents week 52 and 53

Document number: DS45113 Rev. 4 - 2 33 of 34 www.diodes.com August 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. ZXMS82120S14PQ Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SO-14EP SO-14EP Dim Min Max Typ A -- 1.75 -- A1 0.00 0.10 -- A2 1.25 1.55 -- b 0.31 0.51 -- c 0.10 0.25 -- D 8.55 8.75 -- D2 7.40 7.60 7.50 E 5.80 6.20 -- E1 3.80 4.00 -- E2 2.50 2.70 2.60 e 1.27 BSC h 0.25 0.50 -- L 0.40 1.27 -- L1 1.04 REF L2 0.25 BSC θ 0° 8° -- θ1 5° 15° -- θ2 0° -- -- aaa 0.10 bbb 0.20 ccc 0.10 ddd 0.25 eee 0.10 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SO-14EP Dimensions Value (in mm) C 1.270 C1 5.400 G 0.550 X 0.600 X1 7.750 Y 1.500 Y1 2.800 Mechanical Data  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208  Weight: 0.15 grams (Approximate) cPin 1 C A SEE DETAIL 'A' DETAIL 'A' L Gauge Plane Seating Plane h h eee C 01 4x Seating Plane C ccc C 14x e B b 14x ddd C A-B D E 2x 7 Tips E/2 bbb C aaa C D E1/2 D A aaa C A-B2x 01 4x X Y G C

Document number: DS45113 Rev. 4 - 2 34 of 34 www.diodes.com August 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. ZXMS82120S14PQ IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for inform ational purpose only and is provided only to illustrate the operation of Diodes’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes’ products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications, (c) ensuring their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and functional - safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality co ntrol techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. 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All other trademarks are the property of their respective owners. © 2023 Diodes Incorporated. All Rights Reserved. www.diodes.com

Product Information

ZXMS82120S14PQ-13 specifications and overview.

Summary

IntelliFET HIGH-SIDE POWER SWITCH August 2023 Rev. 4 - 2

Description

IntelliFET HIGH-SIDE POWER SWITCH August 2023 Rev. 4 - 2

Source title ZXMS82120S14PQ-13 Datasheet(PDF) - Diodes Incorporated

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