ZXMS6006SG DIODES | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

Document number: DS35141 Rev. 1 - 2 1 of 9 www.diodes.com December 2010 © Diodes Incorporated ZXMS6006SG ADVANCE INFORMATION A Product Line of Diodes Incorporated IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET ® MOSFET Product Summary

  • Continuos drain source voltage 60V
  • On-state resistance 100mΩ
  • Nominal load current (V IN = 5V) 2.8A
  • Clamping Energy 480mJ Description and Applications The ZXMS6006SG is a self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-voltage (active clamp) and ESD protected logic level functionality. The ZXMS6006SG is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough.
  • Lamp Driver
  • Motor Driver
  • Relay Driver
  • Solenoid Driver Features and Benefits
  • Compact high power dissipation package
  • Low input current
  • Logic Level Input (3.3V and 5V)
  • Short circuit protection with auto restart
  • Over voltage protection (active clamp)
  • Thermal shutdown with auto restart
  • Over-current protection
  • Input Protection (ESD)
  • High continuous current rating
  • Green, RoHS Compliant (Note 1)
  • Halogen and Antimony Free. (Note 2)
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
  • Case: SOT-223
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Matte Tin Finish
  • Weight: 0.112 grams (approximate) Ordering Information (Note 3) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXMS6006SGTA ZXMS6006S 7 12 1,000 Notes: 1. Contain <900ppm bromine, chlorine (<1500ppm total) and <1000ppm antimony compounds. 2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com 3. For packaging details, go to our website at http://www.diodes.com Marking Information ZXMS6006S = Product type Marking Code Top View SOT-223 Top view Pin Out Device symbol D S IN S D IN D ZXMS 6006S

Document number: DS35141 Rev. 1 - 2 2 of 9 www.diodes.com December 2010 © Diodes Incorporated ZXMS6006SG ADVANCE INFORMATION A Product Line of Diodes Incorporated IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. Functional Block Diagram

Document number: DS35141 Rev. 1 - 2 3 of 9 www.diodes.com December 2010 © Diodes Incorporated ZXMS6006SG ADVANCE INFORMATION A Product Line of Diodes Incorporated IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Continuous Drain-Source Voltage VDS 60 V Drain-Source Voltage for short circuit protection VDS(SC) 16 V Continuous Input Voltage VIN -0.5 ... +6 V Continuous Input Current @-0.2V ≤ VIN ≤ 6V Continuous Input Current @VIN < -0.2V or VIN > 6V IIN No limit │IIN │≤2 mA Pulsed Drain Current @VIN = 3.3V IDM 11 A Pulsed Drain Current @VIN = 5V IDM 13 A Continuous Source Current (Body Diode) (Note 4) IS 2 A Pulsed Source Current (Body Diode) ISM 12 A Unclamped Single Pulse Inductive Energy, TJ = 25°C, ID = 0.5A, VDD = 24V EAS 480 mJ Electrostatic Discharge (Human Body Model) VESD 4000 V Charged Device Model VCDM 1000 V Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Power Dissipation at TA = 25°C (Note 4) Linear Derating Factor PD 1.0 8.0 W mW/°C Power Dissipation at TA = 25°C (Note 5) Linear Derating Factor PD 1.6 12.8 W mW/°C Thermal Resistance, Junction to Ambient (Note 4) RθJA 125 °C/W Thermal Resistance, Junction to Ambient (Note 5) RθJA 83 °C/W Thermal Resistance, Junction to Case (Note 6) RθJC 39 °C/W Operating Temperature Range TJ -40 to +150 °C Storage Temperature Range TSTG -55 to +150 °C Notes: 4. For a device surface mounted on 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in still air conditio ns. Sink split drain 80% and source 20% to isolate connections. 5. For a device surface mounted on 50mm x 50mm single sided 2o z weight copper on 1.6mm FR4 board, in still air conditions. Sink split drain 80% and source 20% to isolate connections. 6. Thermal resistance between junction and the mounting surfaces of drain and source pins.

Document number: DS35141 Rev. 1 - 2 4 of 9 www.diodes.com December 2010 © Diodes Incorporated ZXMS6006SG ADVANCE INFORMATION A Product Line of Diodes Incorporated IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. Recommended Operating Conditions The ZXMS6006SG is optimized for use with µC operating from 3.3V and 5V supplies. Characteristic Symbol Min Max Unit Input voltage range VIN 0 5.5 V Ambient temperature range TA -40 125 °C High Level Input Voltage for MOSFET to be on VIH 3 5.5 V Low Level Input Voltage for MOSFET to be off VIL 0 0.7 V Peripheral Supply Voltage (voltage to which load is referred) VP 0 16 V Thermal Characteristics 11 0 10m 100m 15X15X1.6 mm Single 1oz FR4 Limited by Over-Current Protection Single Pulse Tamb=25°C Limited by RDS(on) 1ms 10ms 100ms 1sDC Safe Operating Area ID Drain Current (A) VDS Drain-Source Voltage (V) Limit of s/c protection 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 50X50X1.6 mm Single 2oz FR4 15X15X1.6 mm Single 1oz FR4 Derating Curve Temperature (°C) Max Power Dissipation (W) 100µ 1m 10m 100m 1 10 100 1k 100 120 15X15X1.6 mm Single 1oz FR4 Tamb=25°C Transient Thermal Impedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 Thermal Resistance (°C/W) Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k 100 15X15X1.6 mm Single 1oz FR4 Single Pulse Tamb=25°C Pulse Power Dissipation Pulse Width (s) Maximum Power (W)

Document number: DS35141 Rev. 1 - 2 5 of 9 www.diodes.com December 2010 © Diodes Incorporated ZXMS6006SG ADVANCE INFORMATION A Product Line of Diodes Incorporated IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Static Characteristics Drain-Source Clamp Voltage VDS(AZ) 60 65 70 V ID = 10mA Off State Drain Current IDSS - - 1 µA VDS = 12V, VIN = 0V - - 2 VDS = 36V, VIN = 0V Input Threshold Voltage VIN(th) 0.7 1 1.5 V VDS = VGS, ID = 1mA Input Current IIN - 60 100 μA VIN = +3V - 120 400 VIN = +5V Input Current While Over Temperature Active - - - 300 μA VIN = +5V Static Drain-Source On-State Resistance RDS(on) - 85 125 mΩ VIN = +3V, ID = 1A - 75 100 VIN = +5V, ID = 1A Continuous Drain Current (Note 4) ID 2.0 - - A VIN = 3V; TA = 25°C 2.2 - - VIN = 5V; TA = 25°C Continuous Drain Current (Note 5) 2.6 - - VIN = 3V; TA = 25°C 2.8 - - VIN = 5V; TA = 25°C Current Limit (Note 7) ID(LIM) 4 8 - A VIN = +3V 6 13 - VIN = +5V Dynamic Characteristics Turn On Delay Time td(on) - 8.6 - μs VDD = 12V, ID = 1A, VGS = 5V Rise Time tr - 18 - Turn Off Delay Time td(off) - 34 - Fall Time ff - 15 - Over-Temperature Protection Thermal Overload Trip Temperature (Note 8) TJT 150 175 - °C - Thermal Hysteresis (Note 8) ff - 10 - °C - Notes: 7. The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This allows the device to be used in the fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside saturation makes current limit unnecessary. 8. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal operating range, so this part is not designed to withstand over-temperature for extended periods..

Document number: DS35141 Rev. 1 - 2 6 of 9 www.diodes.com December 2010 © Diodes Incorporated ZXMS6006SG ADVANCE INFORMATION A Product Line of Diodes Incorporated IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. Typical Characteristics 0123456789 1 0 1 1 1 2 -50 -25 0 25 50 75 100 125 150 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0.00 0.05 0.10 0.15 0.20 -50 -25 0 25 50 75 100 125 150 0.00 0.05 0.10 0.15 0.20 012345 100 120 0 . 40 . 60 . 81 . 0 0.01 0.1 2.5V 4.5V 3.5V Typical Output Characteristic TA = 25°C VIN ID Drain Current (A) VDS Drain-Source Voltage (V) Threshold Voltage vs Temperature VIN = VDS ID = 1mA VTH Threshold Voltage (V) TJ Junction Temperature (°C) TJ = 150°C On-Resistance vs Input Voltage TJ = 25°C RDS(on) On-Resistance (Ω) VIN Input Voltage (V) ID = 1A Reverse Diode Characteristic VIN = 3V VIN = 5V On-Resistance vs Temperature TJ Junction Temperature (°C) RDS(on) On-Resistance (Ω) Input Current vs Input Voltage IIN Input Current (μA) VIN Input Voltage (V) VSD Source-Drain Voltage (V) IS Source Curent (A) TJ=25°C TJ=150°C

Document number: DS35141 Rev. 1 - 2 7 of 9 www.diodes.com December 2010 © Diodes Incorporated ZXMS6006SG ADVANCE INFORMATION A Product Line of Diodes Incorporated IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. Typical Characteristics - Continued -50 0 50 100 150 200 250 300 -50 0 50 100 150 200 250 300 05 1 0 Switching Speed VIN Drain-Source Voltage (V) Time (μs) VDS ID=1A VDS VIN Switching Speed Drain-Source Voltage (V) Time (μs) ID=1A Typical Short Circuit Protection VIN = 5V VDS = 15V RD = 0Ω ID Drain Current (A) Time (ms)

Document number: DS35141 Rev. 1 - 2 8 of 9 www.diodes.com December 2010 © Diodes Incorporated ZXMS6006SG ADVANCE INFORMATION A Product Line of Diodes Incorporated IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. Package Outline Dimensions DIM Millimeters Inches DIM Millimeters Inches Min Max Min Max Min Max Min Max A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches. Suggested Pad Layout 1.5 0.059 mm inches 3.8 0.15 2.0 0.079 6.3 0.248 2.3 0.091 2.0 0.079

Document number: DS35141 Rev. 1 - 2 9 of 9 www.diodes.com December 2010 © Diodes Incorporated ZXMS6006SG ADVANCE INFORMATION A Product Line of Diodes Incorporated IntelliFET® is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide. IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. Diodes Incorporated does not assume any liability ari sing out of the application or use of this document or an y product described herein; neither does Di odes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or us er of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. Should Customers purchase or use Diodes Inco rporated products for any unintended or una uthorized application, Customers shall i ndemnify and hold Diodes Incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporate d and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2010, Diodes Incorporated www.diodes.com