ZXMS6005DGQ-13

ZXMS6005DGQ

Document overview

• Manufacturer or author: Diodes Incorporated
• PDF pages: 8

Technical content

Document number: DS40464 Rev. 3 - 2 1 of 8 www.diodes.com July 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMS6005DGQ 60V N-CHANNEL SELF-PROTECTED ENHANCEMENT MODE IntelliIFET® MOSFET Product Summary

• Continuous Drain-Source Voltage 60V
• On-State Resistance 200mΩ
• Nominal Load Current (VIN = 5V) 2.0A
• Clamping Energy 490mJ

Description

The ZXMS6005DGQ is a self -protected low-side IntelliFET MOSFET with logic -level input. It integrates overtemperature, overcurrent, overvoltage (active clamp) and ESD protected logic-level functionality. The ZXMS6005DGQ is ideal as a general-purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough.

Applications

• Lamp drivers
• Motor drivers
• Relay drivers
• Solenoid drivers Features and Benefits
• Compact High Power Dissipation Package
• Low Input Current
• Logic-Level Input (3.3V and 5V)
• Short-Circuit Protection with Auto Restart
• Overvoltage Protection (Active Clamp)
• Thermal Shutdown with Auto Restart
• Overcurrent Protection
• Input Protection (ESD)
• High Continuous Current Rating
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• The ZXMS6005DGQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/ Mechanical Data
• Package: SOT223
• Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish
• Weight: 0.12 grams (Approximate) Ordering Information (Note 4) Orderable Part Number Package Marking Reel Size (inches) Tape Width (mm) Packing Qty. Carrier ZXMS6005DGQTA SOT223 (Type DN) ZXMS6005D 7 12 1,000 Units Reel ZXMS6005DGQ-13 SOT223 (Type DN) ZXMS6005D 13 12 2,500 Units Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Top View SOT223 (Type DN) Top View Pinout Device Symbol D S IN S D IN D ZXMS6005D = Product Type Marking Code YWW = Date Code Marking Y or Y = Last Digit of Year (ex: 6 = 2026) WW or WW = Week Code (01 to 53) IntelliFET® is a registered trademark of Diodes Incorporated in the United States and other countries. Green

Document number: DS40464 Rev. 3 - 2 2 of 8 www.diodes.com July 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMS6005DGQ Functional Block Diagram Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Continuous Drain-Source Voltage VDS 60 V Drain-Source Voltage for Short-Circuit Protection VDS(SC) 24 V Continuous Input Voltage VIN -0.5 to +6 V Continuous Input Current @-0.2V ≤ VIN ≤ 6V Continuous Input Current @VIN < -0.2V or VIN > 6V IIN No limit │IIN │≤ 2 mA Pulsed Drain Current @VIN = 3.3V IDM 5 A Pulsed Drain Current @VIN = 5V IDM 6 A Continuous Source Current (Body Diode) (Note 5) IS 2.5 A Pulsed Source Current (Body Diode) ISM 10 A Unclamped Single Pulse Inductive Energy, TJ = +25°C, ID = 0.5A, VDD = 24V EAS 490 mJ Electrostatic Discharge (Human Body Model) VESD 4000 V Charged Device Model VCDM 1000 V Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation at TA = 25°C (Note 5) Linear Derating Factor PD 1.32 10.5 W mW/°C Power Dissipation at TA = 25°C (Note 6) Linear Derating Factor PD 1.69 13.5 W mW/°C Thermal Resistance, Junction to Ambient (Note 5) RθJA 94.8 °C/W Thermal Resistance, Junction to Ambient (Note 6) RθJA 74 °C/W Thermal Resistance, Junction to Case (Note 7) RθJC 9.3 °C/W Operating Temperature Range TJ -40 to 150 °C Storage Temperature Range TSTG -55 to 150 °C Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout . 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate . 7. Thermal resistance between junction and the mounting surfaces of drain and source pins. Overvoltage Protection Overtemperature Protection Overcurrent Protection dv/dt Limitation

Document number: DS40464 Rev. 3 - 2 3 of 8 www.diodes.com July 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMS6005DGQ Recommended Operating Conditions The ZXMS6005DGQ is optimized for use with μC operating from 3.3V and 5V supplies. Characteristic Symbol Min Max Unit Input Voltage Range VIN 0 5.5 V Ambient Temperature Range TA -40 125 °C High-Level Input Voltage for MOSFET to be On VIH 3 5.5 V Low-Level Input Voltage for MOSFET to be Off VIL 0 0.7 V Peripheral Supply Voltage (Voltage to Which Load Is Referred) VP 0 24 V Thermal Characteristics Single Pulse TA = 25°C See Note 5 TA = 25°C See Note 5 See Note 6 See Note 5 Limited by Overcurrent Protection See Note 5 (°C) (°C/W) Limited by RDS(ON)

Document number: DS40464 Rev. 3 - 2 4 of 8 www.diodes.com July 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMS6005DGQ Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Static Characteristics Drain-Source Clamp Voltage VDS(AZ) 60 65 70 V ID = 10mA Off-State Drain Current IDSS — — 1 μA VDS = 12V, VIN = 0V — — 2 VDS = 36V, VIN = 0V Input Threshold Voltage VIN(TH) 0.7 1.2 1.5 V VDS = VGS, ID = 1mA Input Current IIN — 60 100 μA VIN = 3V — 120 200 VIN = 5V Input Current While Overtemperature Active — — — 300 μA VIN = 5V Static Drain-Source On-State Resistance RDS(ON) — 170 250 mΩ VIN = 3V, ID = 1A — 150 200 VIN = 5V, ID = 1A Continuous Drain Current (Note 5) ID 1.4 — — A VIN = 3V, TA = 25°C 1.6 — — VIN = 5V, TA = 25°C Continuous Drain Current (Note 6) 1.9 — — VIN = 3V, TA = 25°C 2.0 — — VIN = 5V, TA = 25°C Current Limit (Note 8) ID(LIM) 2.2 5 — A VIN = 3V 3.3 7 — VIN = 5V Dynamic Characteristics Turn-On Delay Time tD(ON) — 6 — μs VDD = 12V, ID = 1A, VGS = 5V Rise Time tR — 14 — Turn-Off Delay Time tD(OFF) — 34 — Fall Time tF — 19 — Overtemperature Protection Thermal Overload Trip Temperature (Note 9) TJT 150 175 — °C — Thermal Hysteresis (Note 9) ff — 10 — °C — Notes: 8. The drain current is restricted only when the device is in saturation (see graph ‘ Typical Output Characteristic’). This allows the device to be used in the fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low p ower dissipation generated outside saturation makes current limit unnecessary. 9. Overtemperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal operating range, so this part is not designed to withstand overtemperature for extended periods.

Document number: DS40464 Rev. 3 - 2 5 of 8 www.diodes.com July 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMS6005DGQ Typical Characteristics ID = 1A TJ = 150C TJ = 25C VIN = VDS ID = 1mA VIN = 3V VIN = 5V TJ = 150C TJ = 25C RDS(ON) RDS(ON)

Document number: DS40464 Rev. 3 - 2 6 of 8 www.diodes.com July 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMS6005DGQ Typical Characteristics (continued) -50 0 50 100 150 200 250 300 -50 0 50 100 150 200 250 300 -2 0 2 4 6 8 10 12 Switching Speed VIN Drain-Source Voltage (V) Time (s) VDS ID=1A VDS VIN Switching Speed Drain-Source Voltage (V) Time (s) ID=1A Typical Short Circuit Protection VIN = 5V VDS = 15V RD = 0 ID Drain Current (A) Time (ms) Typical Short-Circuit Protection (µs) (µs)

Document number: DS40464 Rev. 3 - 2 7 of 8 www.diodes.com July 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMS6005DGQ Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT223 (Type DN) SOT223 (Type DN) Dim Min Max Typ A -- 1.70 -- A1 0.01 0.15 -- A2 1.50 1.68 1.60 b 0.60 0.80 0.70 b2 2.90 3.10 -- c 0.20 0.32 -- D 6.30 6.70 -- E 6.70 7.30 -- E1 3.30 3.70 -- e -- -- 2.30 e1 -- -- 4.60 L 0.85 -- -- All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT223 (Type DN) Dimensions Value (in mm) C 2.30 C1 6.40 X 1.20 X1 3.30 Y 1.60 Y1 1.60 Y2 8.00 A1A D b e C E L 0.25 Seating Plane Gauge Plane Y X C C1 Y2

Document number: DS40464 Rev. 3 - 2 8 of 8 www.diodes.com July 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMS6005DGQ IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICU LAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes ’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes’ products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications, (c) ensuring their applications, which incor porate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and functional - safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality co ntrol techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. 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