ZXMS6004FF KEXIN | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

www.kexin.com.cn 1 MOSFETSMD Type N-Channel Self Protected Enhancement Mode MOSFET ZXMS6004FF(KXMS6004FF) ƵFeatures ƽ Compact high power dissipation package ƽ Low input current ƽ Logic Level Input (3.3V and 5V) ƽ Short circuit protection with auto restart ƽ Over voltage protection (active clamp) ƽ Thermal shutdown with auto restart ƽ Over-current protection ƽ Input Protection (ESD) ƽ High continuous current rating Note: (a) For a device surface mounted on a 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board,in still air conditions. (b) For a device surface mounted on 50mm x 50mm single side d 2oz weight copper on 1.6mm FR4 board,in still air conditions. (c) Thermal resistance from junction to the mounting surface of the drain pin. 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 Unit: mmSOT-23 0.1+0.05 -0.01 1. IN 2. Source 3. Drain Ƶ Absolute Maximum Ratings Ta = 25ć Symbol Rating Unit VDS 60 VDS(SC) 36 VIN -0.5 … +6 Continuous input Current mA -0.2VİVINİ6V No limit VIN<-0.2V or VIN>6V |IIN|İ2 2.5 Power Dissipation at TA = 25ć (a) 0.83 W Linear derating factor 6.66 mW/ć Power Dissipation at TA = 25ć (b) 1.5 W Linear derating factor 12 mW/ć Continuous source current (Body Diode) (a) IS 1 Pulsed dource current (Body Diode) ISM 5 Unclamped single pulse inductive energy, Tj=25ć, ID=0.5A, VDD=24V Electrostatic discharge (Human body model) VESD 4000 Charged device model VCDM 1000 RthJA 150 RthJA 83 RthJC 44 TJ 150 Tstg -55 to 150 90 mJ V A Pulsed Drain Current @ VIN=5V IDM A V Pulsed Drain Current @ VIN=3.3V Parameter IIN Drain-Source Voltage Continuous input Voltage Drain-Source voltage for short circuit protection Junction Temperature Storage Temperature Range PD ć/W ć Thermal Resistance.Junction- to-Ambient (a) Thermal Resistance.Junction- to-Case (c) PD Thermal Resistance.Junction- to-Ambient (b) EAS

www.kexin.com.cn2 MOSFETSMD Type Notes: (d) The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This allows the device to be used in the fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low power diss ipation generated outside saturation makes current limit unnecessary. (e) Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal operating range, so this part is not designed to withstand over-temperature for extended periods. N-Channel Self Protected Enhancement Mode MOSFET ZXMS6004FF(KXMS6004FF) Ƶ Electrical Characteristics Ta = 25ć Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics Drain-Source Clamp Voltage V DS(AZ) ID=10 mA, VGS=0V 60 70 V VDS=12V, VIN=0V 500 nA VDS=36V, VIN=0V 1 ȝA Input threshold voltage V IN(th) VDS=VGS , ID=1mA 0.7 1.5 V Input Current IIN VIN=+3V 100 Input Current IIN VIN=+5V 200 Input current while over temperature active VIN=+5V 220 VIN=+3V, ID=0.5A 600 VIN=+5V, ID=0.5A 500 Continuous drain current (a) ID VIN=3V, TA=25ć 0.9 A Continuous drain current (a) ID VIN=5V, TA=25ć 1A Continuous drain current (b) ID VIN=3V, TA=25ć 1.2 A Continuous drain current (b) ID VIN=5V, TA=25ć 1.3 A Current limit I D(LIM) VIN=+3V 0.7 A Current limit (d) ID(LIM) VIN=+5V 1 A Dynamic characteristics Turn-On DelayTime t d(on) 5 Rise Time t r 10 Turn-Off DelayTime t d(off) 45 Fall Time t f 15 Over-temperature protection Thermal overload trip temperature (e) TJT 150 175 ć Thermal hysteresis (e) 10 ć ȝA ȝs Off-state drain Current I DSS VGS=5V, VDS=12V, ID=0.5A RDS(on) Static Drain-Source On-Resistance Ƶ Marking Marking 1K6

www.kexin.com.cn 3 MOSFETSMD Type Over-voltage Protection ESD Protection Over-temperature Protection Over-current Protection Logic dV/dt LimitationIN D S N-Channel Self Protected Enhancement Mode MOSFET ZXMS6004FF(KXMS6004FF) Ƶ Functional block diagram The ZXMS6004FF is optimised for use with μC operating from 3.3V and 5V supplies. stinUxaMniMnoitpircseDlobmyS VIN V5.50egnaregatlovtupnI TA C°52104-egnarerutarepmettneibmA VIH High level input voltage for MOSFET to be on 3 5.5 V VIL V7.00ffoebotTEFSOMrofegatlovtupnilevelwoL VP Peripheral supply voltage (voltage to which load is referred) 0 36 V Ƶ Recommended operating conditions

www.kexin.com.cn4 MOSFETSMD Type ƵTypical Characterisitics N-Channel Self Protected Enhancement Mode MOSFET FZXMS6004FF(KXMS6004FF)

www.kexin.com.cn 5 MOSFETSMD Type ƵTypical Characterisitics N-Channel Self Protected Enhancement Mode MOSFET ZXMS6004FF(KXMS6004FF)