ZXMS6003GQ DIODES | Alldatasheet

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IntelliFET is a trademark of Diodes Incorporated. ZXMS6003GQ Document number: DS33607 Rev. 1 - 2 1 of 9 www.diodes.com April 2014 © Diodes Incorporated ZXMS6003GQ ADVANCE INFORMATION 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET®MOSFET WITH PROGRAMMABLE CURRENT LIMIT Product Summary

  • Continuous Drain Source Voltage V DS = 60V
  • On-State Resistance 500m Ω
  • Nominal Load Current (V IN = 5V) 1.4A
  • Clamping Energy 550mJ

Description

Self protected low side MOSFET. M onolithic over temperature, over current, over voltage (active clam p) and ESD protected logic level functionality. Intended as a general purpose switch, with status indication and programmable current limit.

Applications

  • Especially suited for loads with a high in-rush current such as lamps and motors
  • All types of resistive, inductive and capacitive loads in switching
  • μC compatible power switch for 12V and 24V DC applications.
  • Automotive rated
  • Replaces electromechanical relays and discrete circuits
  • Linear mode capability - the curr ent-limiting protection circuitry is designed to de-activate at low VDS, in order not to compromise the load current during normal operation. The design max. DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry.
  • Note: This does not compromise the product's ability to self- protect during short-circuit load conditions
  • The current limit is programmable via an external resistor R prog connected between Status and IN pins
  • Status pin voltage reflects the gate drive being applied internally to the power MOSFET
  • With V IN = 5V and Rprog = 24kΩ: ƒ Status voltage: 5V indicates normal operation. ƒ Status voltage: (2-3)V indicates that the device is in current-limiting mode. ƒ Status voltage < 1V indicates that the device is in thermal shutdown. Features and Benefits
  • Current Limit Programmable Via External Resistor
  • Status Pin (analog status indication)
  • Logic Level Input
  • Short Circuit Protection with Auto Restart
  • Over Voltage Protection (active clamp)
  • Thermal Shutdown with Auto Restart
  • Over-Current Protection
  • Input Protection (ESD)
  • Load Dump Protection (actively protects load)
  • High Continuous Current Rating
  • Qualified to AEC-Q101 Standards for High Reliability
  • PPAP Capable
  • Lead-Free Finish; RoHS compliant (Note 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data
  • Case: SOT223
  • Case Material: Molded Plasti c, “Green” Molding Compound UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Matte Tin Finish
  • Weight: 0.112 grams (approximate) N ote: RPROG must be connected between the Status and IN pins Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoH S 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defin ed as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q100 qualified and are PPAP capable. Automotive, AEC-Q100 and standard products are electrically and thermally the same, except where specified. For more inform ation, please refer to http://www.diodes.com/quality/product_compliance_definitions/. Top View SOT223 Green

IntelliFET is a trademark of Diodes Incorporated. ZXMS6003GQ Document number: DS33607 Rev. 1 - 2 2 of 9 www.diodes.com April 2014 © Diodes Incorporated ZXMS6003GQ ADVANCE INFORMATION Ordering Information (Note 5) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXMS6003GQTA ZXMS6003 7 12 1,000 units Marking Information Functional Block Diagram ZXMS

6003 ZXMS6003 = Product type Marking Code

IntelliFET is a trademark of Diodes Incorporated. ZXMS6003GQ Document number: DS33607 Rev. 1 - 2 3 of 9 www.diodes.com April 2014 © Diodes Incorporated ZXMS6003GQ ADVANCE INFORMATION Absolute Maximum Ratings (@TAMB = +25°C, unless otherwise stated.) Parameter Symbol Limit Unit Continuous Drain-Source Voltage VDS 60 V Drain-Source Voltage for Short Circuit Protection VIN = 5V (Note 6) V DS(SC) 36 V Drain-Source Voltage for Short Circuit Protection VIN = 10V (Note 6) V DS(SC) 20 V Continuous Input Voltage VIN -0.2 to +10 V Peak Input Voltage VIN -0.2 to +20 V Operating Temperature Range TJ, -40 to +150 °C Storage Temperature Range TSTG -55 to +150 °C Power Dissipation at TAMB = +25°C (a) (Note 6) P D 2.5 W Continuous Drain Current @ VIN = 10V; TA = +25°C (Note 7) I D 1.6 A Continuous Drain Current @ VIN = 5V; TA = +25°C (Note 7) I D 1.4 A Continuous Source Current (Body Diode) (Note 7) IS 3 A Pulsed Source Current (Body Diode) (Note 8) IS 8 A Unclamped Single Pulse Inductive Energy EAS 550 mJ Load Dump Protection VLoadDump 80 V Electrostatic Discharge (Human Body Model) VESD 4000 V DIN Humidity Category, DIN 40 040 E IEC Climatic Category, DIN IEC 68-1 40/150/56 Thermal Resistance (@TAMB = +25°C, unless otherwise stated.) Parameter Symbol Value Unit Junction to Ambient RθJA 50 °C/W Junction to Ambient RθJA 28 °C/W Notes: 6. For I D(LIM) < 1.2A (see safe operating area curve). 7. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight copper. 8. For a device surface mounted on FR4 board and measured at t < = 10s.

IntelliFET is a trademark of Diodes Incorporated. ZXMS6003GQ Document number: DS33607 Rev. 1 - 2 4 of 9 www.diodes.com April 2014 © Diodes Incorporated ZXMS6003GQ ADVANCE INFORMATION Thermal Characteristics

IntelliFET is a trademark of Diodes Incorporated. ZXMS6003GQ Document number: DS33607 Rev. 1 - 2 5 of 9 www.diodes.com April 2014 © Diodes Incorporated ZXMS6003GQ ADVANCE INFORMATION Electrical Characteristics (@Tamb = +25°C, unless otherwise stated.) Parameter Symbol Min Typ Max Unit Conditions Static Characteristics Drain-Source Clamp Voltage VDS(AZ) 60 70 75 V ID = 10mA Off State Drain Current IDSS — 0.1 3 µA VDS = 12V, VIN = 0V Off State Drain Current IDSS — 3 15 µA VDS = 32V, VIN = 0V Input Threshold Voltage (Note 9) VIN(th) 1 2.1 — V VDS = VGS, ID = 1mA Input Current IIN — 0.7 1.2 mA VIN = +5V Input Current IIN — 1.5 2.7 mA VIN = +7V Input Current IIN — 4 7 mA VIN = +10V Static Drain-Source On-State Resistance RDS(ON) — 520 675 mΩ VIN = 5V, ID = 0.2A Static Drain-Source On-State Resistance RDS(ON) — 385 500 mΩ VIN = 10V, ID = 0.5A Current Limit (Note 10) ID(LIM) 0.2 0.3 0.4 A VIN = 5V, VDS = 10V RPROG = 20k Current Limit (Note 10) ID(LIM) 0.7 0.9 1.2 A VIN = 10V, VDS = 10V, RPROG = 20k Dynamic Characteristics Turn-On Time (VIN to 90% ID) t ON — 3 10 µs RPROG = 20k, RL = 22Ω, VIN = 0 to 10V, VDD = 12V Turn-Off Time (VIN to 90% ID) T OFF — 13 20 µs RPROG = 20k, RL = 22Ω, VIN = 10V to 0V, VDD = 12V Slew Rate On (70 to 50% VDD) DV DS/dtON — 8 20 V/µs RPROG= 20k, RL = 22Ω, VIN = 0 to 10V, VDD = 12V Slew Rate Off (50 to 70% VDD) DV DS/dtON — 3.2 10 V/µs RPROG = 20k, RL = 22Ω, VIN = 10V to 0V, VDD = 12V Protection Functions (Note 10) Required Input Voltage for Over Temperature Protection VPROT 4.5 — — V Thermal Overload Trip Temperature TJT 150 175 — °C Thermal hysteresis — — 1 — °C Unclamped Single Pulse Inductive Energy TJ = +25°C EAS 550 — — mJ ID(ISO) = 0.7A, VDD = 32V Unclamped Single Pulse Inductive Energy TJ = +150°C EAS 200 — — mJ ID(ISO) = 0.7A, VDD = 32V Status Flag Normal Operation VSTATUS — 4.95 — V VIN = 5V Current Limit Operating VSTATUS — 2.5 — V VIN = 5V Thermal Shutdown Activated VSTATUS — 0.2 1 V VIN = 5V Normal Operation VSTATUS — 8 — V VIN = 10V Current Limit Operation VSTATUS — 3 — V VIN = 10V Thermal Shutdown Activated VSTATUS — 0.35 1 V VIN = 10V Inverse Diode Source Drain Voltage VSD — — 1 V VIN = 0V, -ID = 1.4A, Notes: 9. Protection features may operate outside spec for VIN<4.5V 10. The drain current is limited to a reduced value when Vds exceeds a safe level. 11. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous, repetitive operation.

IntelliFET is a trademark of Diodes Incorporated. ZXMS6003GQ Document number: DS33607 Rev. 1 - 2 6 of 9 www.diodes.com April 2014 © Diodes Incorporated ZXMS6003GQ ADVANCE INFORMATION Typical Characteristics

IntelliFET is a trademark of Diodes Incorporated. ZXMS6003GQ Document number: DS33607 Rev. 1 - 2 7 of 9 www.diodes.com April 2014 © Diodes Incorporated ZXMS6003GQ ADVANCE INFORMATION

IntelliFET is a trademark of Diodes Incorporated. ZXMS6003GQ Document number: DS33607 Rev. 1 - 2 8 of 9 www.diodes.com April 2014 © Diodes Incorporated ZXMS6003GQ ADVANCE INFORMATION Package Outline Dimensions Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e - - 4.60 e1 - - 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm Dimensions Value (in mm) X1 3.3 X2 1.2 Y1 1.6 Y2 1.6 C1 6.4 C2 2.3 A1A D b e C L 0°-10° Q E 0.25 Seating Plane Gauge Plane

IntelliFET is a trademark of Diodes Incorporated. ZXMS6003GQ Document number: DS33607 Rev. 1 - 2 9 of 9 www.diodes.com April 2014 © Diodes Incorporated ZXMS6003GQ ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. Diodes Incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Inco rporated products for any unintended or una uthorized application, Customers shall i ndemnify and hold Diodes Incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of t his document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporate d and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2014, Diodes Incorporated www.diodes.com