ZXMS6001N3

Document overview

  • Manufacturer or author: Diodes Incorporated
  • PDF pages: 9

Technical content

Document number: DS33603 Rev. 3 - 3 1 of 9 www.diodes.com July 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMS6001N3 60V N-CHANNEL SELF-PROTECTED ENHANCEMENT MODE IntelliFET® MOSFET Product Summary

  • Continuous Drain-Source Voltage: VDS = 60V
  • On-State Resistance: 675mΩ
  • Max Nominal Load Current (VIN = 5V): 1.1A
  • Min Nominal Load Current (VIN = 5V): 0.7A
  • Clamping Energy: 550mJ

Description

The ZXMS6001N3 is a l ow input current , self-protected, low-side IntelliFET MOSFET intended for V IN = 5V applications. It features monolithic overtemperature, overcurrent, over voltage (active clamp), and ESD-protected logic-level functionality. It is intended as a general- purpose switch.

Applications

  • Especially suited for loads with a high inrush current, such as lamps and motors
  • All types of resistive, inductive, and capacitive loads in switching
  • µC compatible power switches for 12V and 24V DC applications
  • Automotive rated
  • Replaces electromechanical relays and discrete circuits
  • Linear mode capability: The current-limiting protection circuitry is designed to deactivate at low VDS to minimize on-state power dissipation. The maximum DC operating current is determined by thermal capability of package/board combination rather than by protection circuitry, which does not compromise the product’s ability to self-protect at low VDS. Features and Benefits
  • Low Input Current
  • Short-Circuit Protection with Auto Restart
  • Overvoltage Protection (Active Clamp)
  • Thermal Shutdown with Auto Restart
  • Overcurrent Protection
  • Input Protection (ESD)
  • Load-Dump Protection (Actively Protects Load)
  • Lead-Free Finish; RoHS Compliant (Note 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • An automotive-compliant part is available under a separate datasheet (ZXMS6001N3Q). Mechanical Data
  • Package: SOT223
  • Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Matte Tin Finish
  • Weight: 0.112 grams (Approximate) (Note 5) Ordering Information (Note 4) Orderable Part Number Package Marking Reel Size (inches) Tape Width (mm) Packing Qty. Carrier ZXMS6001N3TA SOT223 (Type DN) ZXMS6001 7 12 1000 Units Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlori ne (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. 5. The tab is connected to the source pin and must be electrically isolated from the drain pin. Connection of significant copper to the drain pin is recommended for best thermal performance. Top View SOT223 (Type DN) Top View Pinout IntelliFET® is a registered trademark of Diodes Incorporated in the United States and other countries. THE ZXMS6001N3 IS NOT RECOMMENDED FOR NEW DESIGNS. PLEASE CONTACT US.

Document number: DS33603 Rev. 3 - 3 2 of 9 www.diodes.com July 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMS6001N3 Marking Information Functional Block Diagram dV/dt Limitation ZXMS6001 = Product Type Marking Code YWW = Date Code Marking Y or Y = Last Digit of Year (ex: 6 = 2026) WW or WW = Week Code (01 to 53)

Document number: DS33603 Rev. 3 - 3 3 of 9 www.diodes.com July 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMS6001N3 Absolute Maximum Ratings (@TA = +25° C, unless otherwise stated.) Characteristic Symbol Value Unit Continuous Drain-Source Voltage VDS 60 V Drain-Source Voltage for Short-Circuit Protection VIN = 5V VDS(SC) 36 V Continuous Input Voltage VIN -0.2 to +10 V Peak Input Voltage VIN -0.2 to +20 V Continuous Input Current -0.2V ≤ VIN ≤ 10V VIN < -0.2V or VIN > 10V IIN No Limit │IIN│≤ 2 mA Operating Temperature Range TJ -40 to 150 °C Storage Temperature Range TSTG -55 to 150 °C Power Dissipation at TA = +25°C (Note 6) PD 1.5 W Power Dissipation at TA = +25°C (Note 8) PD 0.6 W Continuous Drain Current @ VIN = 5V; TA = +25°C (Note 6) ID 1.1 A Continuous Drain Current @ VIN = 5V; TA = +25°C (Note 8) ID 0.7 A Continuous Source Current (Body Diode) (Note 6) IS 2.0 A Pulsed Source Current (Body Diode) (Note 7) IS 3.3 A Unclamped Single Pulse Inductive Energy EAS 550 mJ Load Dump Protection VLOADDUMP 80 V Electrostatic Discharge (Human Body Model) VESD 4000 V DIN Humidity Category, DIN 40 040 — E — IEC Climatic Category, DIN IEC 68-1 — 40/150/56 — Thermal Resistance Characteristic Symbol Value Unit Junction to Ambient (Note 6) RθJA 83 °C/W Junction to Ambient (Note 7) RθJA 45 °C/W Junction to Ambient (Note 8) RθJA 208 °C/W Recommended Operating Conditions The ZXMS6001N3 is optimized for use with µC operating from 5V supplies. Characteristic Symbol Min Max Unit Input Voltage Range VIN 0 6 V Ambient Temperature Range TA -40 125 °C High-Level Input Voltage for MOSFET (Note 9) VIH 4 6 V Peripheral Supply Voltage (Voltage to Which Load is Referred) VP — 60 V Notes: 6. For a device surface mounted on 25mm × 25mm × 1.6mm FR-4 board with a high coverage of single-sided 2oz weight copper. Allocation of 6cm2 copper, 33% to source tab, and 66% to drain pin with source tab and drain pin electrically isolated. 7. For a device surface mounted on FR-4 board as Note 6 and measured at t ≤ 10s. 8. For a device surface mounted on FR-4 board with the minimum copper required for electrical connections. 9. Recommended input voltage range over which protection circuits function as specified.

Document number: DS33603 Rev. 3 - 3 4 of 9 www.diodes.com July 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMS6001N3 Electrical Characteristics (@TA = +25° C, unless otherwise stated.) Characteristic Symbol Min Typ Max Unit Condition Static Characteristics Drain-Source Clamp Voltage VDS(AZ) 60 70 75 V ID = 10mA Off-State Drain Current IDSS — 0.1 3 µA VDS = 12V, VIN = 0V Off-State Drain Current IDSS — 3 15 µA VDS = 32V, VIN = 0V Input Threshold Voltage (Note 10) VIN(TH) 1 1.8 2.5 V VDS = VGS, ID = 10mA Input Current IIN — 150 — µA VIN = +3V Input Current IIN — 335 500 µA VIN = +5V, All Circumstances Static Drain-Source On-State Resistance RDS(ON) — 1 2 Ω VIN = 3V, ID = 0.1A Static Drain-Source On-State Resistance RDS(ON) — 520 675 mΩ VIN = 5V, ID = 0.7A Current Limit (Note 11) ID(LIM) 1 1.8 3 A VIN = 5V, VDS > 5V Dynamic Characteristics Turn-On Time (VIN to 90% ID) tON — 27 — μs RL = 22Ω, VIN = 0V to 5V, VDD = 12V Turn-Off Time (VIN to 90% ID) tOFF — 26 — μs RL = 22Ω, VIN = 5V to 0V, VDD = 12V Slew Rate On (70% to 50% VDD) dVDS/dtON — 1.4 — V/μs RL = 22Ω, VIN = 0V to 5V, VDD = 12V Slew Rate Off (50% to 70% VDD) dVDS/dtON — 1.2 — V/μs RL = 22Ω, VIN = 5V to 0V, VDD = 12V Protection Functions (Note 12) Minimum Input Voltage for Over-Temperature Protection (Note 13) VPROT(MIN) — 3.5 4 V TTRIP > 150° C Maximum Input Voltage for Over-Temperature Protection (Note 13) VPROT(MAX) 6 7 — V TTRIP > 150° C Thermal Overload Trip Temperature TJT 150 175 — °C — Thermal Hysteresis — — 8 — °C — Unclamped Single Pulse Inductive Energy TJ = 25°C EAS 550 — — mJ ID(ISO) = 0.7A, VDD = 32V Unclamped Single Pulse Inductive Energy TJ = 150°C EAS 200 — — mJ ID(ISO) = 0.7A, VDD = 32V Inverse Diode Source-Drain Voltage VSD — — 1 V VIN = 0V, -ID = 1.4A Notes: 10. Recommended input voltage range over which protection circuits function as specified. 11. The drain current is limited to a reduced value when V DS exceeds a safe level. 12. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous, repetitive operation. 13. Not subject to production test, specified by design.

Document number: DS33603 Rev. 3 - 3 5 of 9 www.diodes.com July 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMS6001N3

Application Information

The current-limit protection circuitry is designed to deactivate at low V DS to prevent the load current from unnecessarily restriction during normal operation. The design max-DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry (see Typical Output Characteristic graph). This does not compromise the product’s ability to self-protect at low VDS. The over-temperature protection circuit trips at a minimum of +150° C, so the available package dissipation reduces as the maximum required ambient temperature increases. This leads to the following maximum recommended continuous operating currents. Minimum Copper Area Characteristics For minimum copper condition as described in Note 8. Maximum Ambient Temperature TA Maximum Continuous Current VIN = 5V 25°C at VIN = 5V 720mA 70° C at VIN = 5V 575mA 85° C at VIN = 5V 520mA 125° C at VIN = 5V 320mA See Note 8 TA = 25°C TA = 25°C TA = 25°C

Document number: DS33603 Rev. 3 - 3 6 of 9 www.diodes.com July 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMS6001N3 Large Copper Area Characteristics For large copper area as described in Note 6. Maximum Ambient Temperature TA Maximum Continuous Current VIN = 5V 25°C at VIN = 5V 1140mA 70°C at VIN = 5V 915mA 85°C at VIN = 5V 825mA 125°C at VIN = 5V 510mA See Note 6 TA = 25°C TA = 25°C TA = 25°C

Document number: DS33603 Rev. 3 - 3 7 of 9 www.diodes.com July 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMS6001N3 TJ = 25°C

Document number: DS33603 Rev. 3 - 3 8 of 9 www.diodes.com July 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMS6001N3 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT223 (Type DN) SOT223 (Type DN) Dim Min Max Typ A -- 1.70 -- A1 0.01 0.15 -- A2 1.50 1.68 1.60 b 0.60 0.80 0.70 b2 2.90 3.10 -- c 0.20 0.32 -- D 6.30 6.70 -- E 6.70 7.30 -- E1 3.30 3.70 -- e -- -- 2.30 e1 -- -- 4.60 L 0.85 -- -- All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT223 (Type DN) Dimensions Value (in mm) C 2.30 C1 6.40 X 1.20 X1 3.30 Y 1.60 Y1 1.60 Y2 8.00 A1A D b e C E L 0.25 Seating Plane Gauge Plane Y X C C1 Y2

Document number: DS33603 Rev. 3 - 3 9 of 9 www.diodes.com July 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMS6001N3 IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICU LAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes ’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes’ products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications, (c) ensuring their applications, which incor porate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and functional - safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality co ntrol techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities. 4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trad emarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes’ website) under this document. 5. Diodes’ products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. 6. Diodes’ products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sa le is prohibited under any applicable laws and regulations. Should customers or users use Diodes’ products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any da mages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Di odes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application. 7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may c ontain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this docu ment is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to ma ke modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. 8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion her eof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use. 9. This Notice may be periodically updated with the most recent version available at https://www.diodes.com/about/company/terms-and- conditions/important-notice The Diodes logo is a registered trademark of Diodes Incorporated in the United States and other countries. All other trademarks are the property of their respective owners. © 2026 Diodes Incorporated. All Rights Reserved. www.diodes.com