ZXMP6A13F

Document overview

  • Manufacturer or author: Diodes Incorporated
  • PDF pages: 8

Technical content

Features

  • Fast switching speed
  • Low input capacitance
  • Low gate charge
  • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
  • Case: SOT23
  • Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208
  • Weight: 0.008 grams (approximate) Ordering Information (Notes 4) Product Compliance Case Packaging ZXMP6A13FTA Standard SOT23 3,000 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directiv e 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more in formation about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Marking Information Top View Equivalent Circuit 7P6 = Product Type Marking Code D S G Top View Pin Out D S G 7P6 SOT23

Document Number DS32014 Rev. 7 - 2 2 of 8 www.diodes.com November 2013 © Diodes Incorporated ZXMP6A13F Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current VGS = -10V (Note 7) TA = +70°C (Note 7) (Note 6) ID -1.1 -0.8 -0.9 A Pulsed Drain Current (Note 7) IDM -4 A Continuous Source Current (Body Diode) (Note 6) IS -1.2 A Pulsed Source Current (Body Diode) (Note 7) ISM -4 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 5) Linear Derating Factor P D 625 mW mW/°C Power Dissipation (Note 6) Linear Derating Factor PD 806 6.5 mW mW/°C Thermal Resistance, Junction to Ambient (Note 5) RθJA 200 °C/W Thermal Resistance, Junction to Ambient (Note 6) RθJA 155 °C/W Thermal Resistance, Junction to Leads (Note 8) RθJL 194 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 5. For a device surface mounted on 25 mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions 6. For a device surface mounted on FR4 PCB measured at t ≤ 5secs. 7. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05 pulse width = 10 μs - pulse current limited by maximum junction temperature. 8. Thermal resistance from junction to solder-point (at the end of the collector lead).

Document Number DS32014 Rev. 7 - 2 3 of 8 www.diodes.com November 2013 © Diodes Incorporated ZXMP6A13F Thermal Characteristics 11 0 1 0 0 10m 100m Single Pulse Tamb=25°C RDS(on) Limited 100µs 1ms 10ms 100ms DC Safe Operating Area -ID Drain Current (A) -VDS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 160 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Derating Curve Temperature (°C) Max Power Dissipation (W) 100µ 1m 10m 100m 1 10 100 1k 100 150

200 Tamb=25°C

Transient Thermal Impedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 Thermal Resistance (°C/W)Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k Single Pulse Tamb=25°C Pulse Power Dissipation Pulse Width (s) Maximum Power (W)

Document Number DS32014 Rev. 7 - 2 4 of 8 www.diodes.com November 2013 © Diodes Incorporated ZXMP6A13F Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS -60 ⎯ ⎯ V ID = -250µA, VGS = 0V Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -0.5 µA VDS = -60V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) -1 ⎯ -3 V ID = -250μA, VDS = VGS Static Drain-Source On-Resistance (Note 9) RDS (ON) ⎯ ⎯ 0.400 Ω VGS = -10V, ID = -0.9A Forward Transconductance (Notes 9 & 11) gfs ⎯ 1.8 ⎯ S VDS = -15V, ID = -0.9A Diode Forward Voltage (Note 9) VSD ⎯ -0.85 -0.95 V TJ = +25°C, IS = -0.8A, VGS = 0V Reverse Recovery Time (Note 11) trr ⎯ 21.1 ⎯ ns TJ = +25°C, IF = -0.9A, di/dt = 100A/μs Reverse Recovery Charge (Note 11) Qrr ⎯ 19.3 ⎯ nC DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance Ciss ⎯ 219 ⎯ pF VDS = -30V, VGS = 0V f = 1MHz Output Capacitance Coss ⎯ 25.7 ⎯ Reverse Transfer Capacitance Crss ⎯ 20.5 ⎯ Turn-On Delay Time (Note 10) tD(on) ⎯ 1.6 ⎯ ns VDD = -30V, ID = -1A, RG ≅ 6.0Ω, VGS = -10V Turn-On Rise Time (Note 10) tr ⎯ 2.2 ⎯ Turn-Off Delay Time (Note 10) tD(off) ⎯ 11.2 ⎯ Turn-Off Fall Time (Note 10) tf ⎯ 5.7 ⎯ Total Gate Charge (Note 10) Qg ⎯ 2.9 ⎯ nC VDS = -30V, VGS = -4.5V, ID = -0.9A Total Gate Charge (Note 10) Qg ⎯ 5.9 ⎯ nC VDS = -30V, VGS = -10V, ID = -0.9A Gate-Source Charge (Note 10) Qgs ⎯ 0.74 ⎯ Gate-Drain Charge (Note 10) Qgd ⎯ 1.5 ⎯ Notes: 9. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%. 10. Switching characteristics are independent of operating junction temperature. 11. For design aid only, not subject to production testing.

Document Number DS32014 Rev. 7 - 2 5 of 8 www.diodes.com November 2013 © Diodes Incorporated ZXMP6A13F Typical Characteristics 0.1 1 10 0.1 0.1 1 10 0.01 0.1 12345 0.1 -50 0 50 100 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 1 10 0.01 0.1 10V 4.5V 3.5V -VGS 2.5V Output Characteristics T = 25°C -VGS -ID Drain Current (A) -VDS Drain-Source Voltage (V) 4.5V 3.5V 1.5V 10V 2.5V Output Characteristics T = 150°C -ID Drain Current (A) -VDS Drain-Source Voltage (V) Typical Transfer Characteristics -VDS = 10V T = 25°C T = 150°C -ID Drain Current (A) -VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(on) VGS = -10V ID = -0.9A VGS(th) VGS = VDS ID = -250uA Normalised RDS(on) and VGS(th) Tj Junction Temperature (°C) 1.5V 10V 3V2V 3.5V 2.5V On-Resistance v Drain Current T = 25°C-VGS RDS(on) Drain-Source On-Resistance (Ω) -ID Drain Current (A) T = 150°C T = 25°C Source-Drain Diode Forward Voltage -VSD Source-Drain Voltage (V) -ISD Reverse Drain Current (A)

Document Number DS32014 Rev. 7 - 2 6 of 8 www.diodes.com November 2013 © Diodes Incorporated ZXMP6A13F Typical Characteristics – (cont.) 0.1 1 10 100 200 300 CRSS COSS CISS VGS = 0V f = 1MHz C Capacitance (pF) -VDS - Drain - Source Voltage (V) 0123456 VDS = -30V ID = -0.9A Gate-Source Voltage v Gate ChargeCapacitance v Drain-Source Voltage Q - Charge (nC) -VGS Gate-Source Voltage (V) Test Circuits

Document Number DS32014 Rev. 7 - 2 7 of 8 www.diodes.com November 2013 © Diodes Incorporated ZXMP6A13F Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 - - 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 α 0° 8° - All Dimensions in mm Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 A M J L D F B C H K G X E Y CZ

Document Number DS32014 Rev. 7 - 2 8 of 8 www.diodes.com November 2013 © Diodes Incorporated ZXMP6A13F IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability ari sing out of the application or use of this document or any product described he rein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall i ndemnify and hold Diodes Incorporated and its representati ves harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into mu ltiple languages for reference. Only the English version of t his document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when pro perly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in th e safety and regulatory ramifications of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all lega l, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, lif e support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporate d and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2013, Diodes Incorporated www.diodes.com