ZXMP4A57E6
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 8
Technical content
Document Number DS35238 Rev. 3 - 2 1 of 8 www.diodes.com February 2015 © Diodes Incorporated ZXMP4A57E6 ADVANCE INFORMATION YM 4A57 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(ON) max ID max TA = +25°C -40V 80mΩ @ VGS= -10V -3.7 A 150mΩ @ VGS= -4.5V -2.8 A
Description
This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
Motor Control DC-DC Converters Power Management Functions Uninterrupted Power Supply Features and Benefits Fast Switching Speed Low Gate Drive Low Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Case: SOT26 Case Material: Molded Plastic; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight 0.018 grams (Approximate) Ordering Information (Notes 4 & 5) Part Number Compliance Case Quantity per reel ZXMP4A57E6TA Standard SOT26 3,000 ZXMP4A57E6QTA Automotive SOT26 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/ . Marking Information Date Code Key Year 2015 2016 2017 2018 2019 2020 2021 2022 Code C D E F G H I J Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Top View Pin-Out Equivalent Circuit D S G Top View SOT26 4A57 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: C = 2015) M or M = Month (ex: 9 = September) SOT26
Document Number DS35238 Rev. 3 - 2 2 of 8 www.diodes.com February 2015 © Diodes Incorporated ZXMP4A57E6 ADVANCE INFORMATION Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS -40 V Gate-Source Voltage VGS 20 V Continuous Drain Current VGS = 10V (Note 7) ID -3.7 A TA = +70°C (Note 7) -2.9 (Note 6) -2.9 Pulsed Drain Current VGS = 10V (Note 8) IDM -18 A Continuous Source Current (Body Diode) (Note 7) IS -2.6 A Pulsed Source Current (Body Diode) (Note 8) ISM -18 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation Linear Derating Factor (Note 6) PD 1.1 8.8 W mW/°C (Note 7) 1.7 13.7 Thermal Resistance, Junction to Ambient (Note 6) RθJA 113 °C/W (Note 7) 73 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air condi tions; the device is measured when operating in a steady-state condition. 7. Same as Note 4, except the device is measured at t 5 seconds. 8. Same as Note 4, except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperat ure.
Document Number DS35238 Rev. 3 - 2 3 of 8 www.diodes.com February 2015 © Diodes Incorporated ZXMP4A57E6 ADVANCE INFORMATION Thermal Characteristics 1 10 10m 100m 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 100µ 1m 10m 100m 1 10 100 1k 100 100µ 1m 10m 100m 1 10 100 1k 100 100us 100ms RDS(ON) Limited 1ms P-channel Safe Operating Area Single Pulse, Tamb=25°C DC 10ms -ID Drain Current (A) -VDS Drain-Source Voltage (V) Derating Curve Max Power Dissipation (W) Temperature (°C) D=0.2 D=0.5 D=0.1 Transient Thermal Impedance Single Pulse D=0.05 Thermal Resistance (°C/W) Pulse Width (s) Single Pulse Tamb=25°C Pulse Power Dissipation Maximum Power (W) Pulse Width (s)
Document Number DS35238 Rev. 3 - 2 4 of 8 www.diodes.com February 2015 © Diodes Incorporated ZXMP4A57E6 ADVANCE INFORMATION Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS -40 V ID = -250µA, VGS = 0V Zero Gate Voltage Drain Current IDSS -0.5 µA VDS = -40V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) -1.0 -3.0 V ID = -250µA, VDS = VGS Static Drain-Source On-Resistance (Note 9) RDS(ON) 0.080 Ω VGS = -10V, ID = -4A Forward Transconductance (Notes 9 & 10) gfs 7.6 S VDS = -15V, ID = -4A Diode Forward Voltage (Note 9) VSD -0.86 -0.95 V IS = -4A, VGS = 0V Reverse Recovery Time (Note 10) trr 17.4 ns IS = -1.8A, di/dt = 100A/µs Reverse Recovery Charge (Note 10) Qrr 11.1 nC DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Ciss 833 pF VDS = -20V, VGS = 0V f = 1MHz Output Capacitance Coss 122 Reverse Transfer Capacitance Crss 78 Total Gate Charge (Note 11) Qg 7 nC VGS = -4.5V VDS = -20V ID = -4A Total Gate Charge (Note 11) Qg 15.8 VGS = -10V Gate-Source Charge (Note 11) Qgs 3.6 Gate-Drain Charge (Note 11) Qgd 2.7 Turn-On Delay Time (Note 11) tD(on) 2.5 ns VDD = -20V, VGS = -10V ID = -1A, RG 6.0Ω Turn-On Rise Time (Note 11) tr 3.3 Turn-Off Delay Time (Note 11) tD(off) 47 Turn-Off Fall Time (Note 11) tf 21 Notes: 9. Measured under pulsed conditions. Pulse width 300µs; duty cycle 2%. 10. For design aid only, not subject to production testing. 11. Switching characteristics are independent of operating junction temperatures.
Document Number DS35238 Rev. 3 - 2 5 of 8 www.diodes.com February 2015 © Diodes Incorporated ZXMP4A57E6 ADVANCE INFORMATION Typical Characteristics 0.1 1 10 0.01 0.1 0.1 1 10 0.01 0.1 2 3 4 0.1 -50 0 50 100 150 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 10 0.01 0.1 100 1E-4 1E-3 0.01 0.1 10V 4.5V 3.5V -VGS 2.5V Output Characteristics T = 25°C -VGS -ID Drain Current (A) -VDS Drain-Source Voltage (V) 3.5V 4.5V 10V 2.5V Output Characteristics T = 150°C -ID Drain Current (A) -VDS Drain-Source Voltage (V) Typical Transfer Characteristics VDS = -10V T = 25°C T = 150°C -ID Drain Current (A) -VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(on) VGS = -10V ID = - 4A VGS(th) VGS = VDS ID = -250uA Normalised RDS(on) and VGS(th) Tj Junction Temperature (°C) VGS= 0V 10V 4.5V 3.5V 2.5V On-Resistance v Drain Current T = 25°C -VGS RDS(on) Drain-Source On-Resistance -ID Drain Current (A) T = 150°C T = 25°C Source-Drain Diode Forward Voltage -VSD Source-Drain Voltage (V) -ISD Reverse Drain Current (A)
Document Number DS35238 Rev. 3 - 2 6 of 8 www.diodes.com February 2015 © Diodes Incorporated ZXMP4A57E6 ADVANCE INFORMATION Typical Characteristics (cont.) 0.1 1 10 200 400 600 800 1000 CRSS COSS CISS VGS = 0V f = 1MHz C Capacitance (pF) -VDS - Drain - Source Voltage (V) 0 2 4 6 8 10 12 14 16 ID = -4A VDS = -20V Gate-Source Voltage v Gate ChargeCapacitance v Drain-Source Voltage Q - Charge (nC) -VGS Gate-Source Voltage (V) Test Circuits
Document Number DS35238 Rev. 3 - 2 7 of 8 www.diodes.com February 2015 © Diodes Incorporated ZXMP4A57E6 ADVANCE INFORMATION Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. SOT26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0° 8° All Dimensions in mm Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C1 2.40 C2 0.95 A M J LD B C H K X Z Y C2C2 G
Document Number DS35238 Rev. 3 - 2 8 of 8 www.diodes.com February 2015 © Diodes Incorporated ZXMP4A57E6 ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, en hancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability a rising out of the application or use of this document or any product describ ed herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such appli cations shall assume all risks of such use and w ill agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all c laims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, i nternational or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English bu t may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Dio des Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com