ZXMP4A16G DIODES | Alldatasheet
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Technical content
V(BR)DSS = -40V: RDS(on) = 0.060 : ID = -6.4A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
/c183Low on-resistance /c183Fast switching speed /c183Low threshold /c183Low gate drive /c183SOT223 package
APPLICATIONS
/c183DC-DC Converters /c183Disconnect switches /c183Audio output stages /c183Motor Control DEVICE MARKING /c183ZXMP 4A16 ZXMP4A16G 40V P-CHANNEL ENHANCEMENT MODE MOSFET ISSUE 4 - JULY 2003 DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMP4A16GTA 7” 12mm 1000 units ZXMP4A16GTC 13” 12mm 4000 units
ORDERING INFORMATION
PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS -40 V Gate-Source Voltage V GS /H1100620 V Continuous Drain Current (V GS= -10V; T A=25°C) (b) (VGS= -10V; T A=70°C) (b) (VGS= -10V; T A=25°C) (a) ID -6.4 -5.1 -4.6 A Pulsed Drain Current (c) IDM -21 A Continuous Source Current (Body Diode) (b) IS -5.2 A Pulsed Source Current (Body Diode)(c) I SM -21 A Power Dissipation at T A=25°C (a) Linear Derating Factor PD 2.0 W mW/°C Power Dissipation at T A=25°C (b) Linear Derating Factor PD 3.9 W mW/°C Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) RθJA 62.5 °C/W Junction to Ambient (b) RθJA 32.2 °C/W THERMAL RESISTANCE NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t/H1108810 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS STATIC Drain-Source Breakdown Voltage V (BR)DSS -40 V ID=-250 µ A, V GS=0V Zero Gate Voltage Drain Current I DSS -1 /H9262AV DS=-40V, V GS=0V Gate-Body Leakage I GSS 100 nA V GS=/H1100620V, V DS=0V Gate-Source Threshold Voltage V GS(th) -1.0 V I D=-250 /H9262A, V DS=V GS Static Drain-Source On-State Resistance (1) RDS(on) 0.060 0.100 /H9024 /H9024 V GS=-10V, I D=-3.8A VGS=-4.5V, I D=-2.9A Forward Transconductance (1)(3) gfs 8.85 S V DS=-15V,I D=-3.8A DYNAMIC (3) Input Capacitance C iss 1007 pF VDS=-20V, V GS=0V, f=1MHzOutput Capacitance C oss 130 pF Reverse Transfer Capacitance C rss 85 pF SWITCHING (2)(3) Turn-On Delay Time t d(on) 2.33 ns VDD =-20V, I D=-1A RG/G40 6.0 /H9024,VGS=-10V Rise Time t r 8.84 ns Turn-Off Delay Time t d(off) 29.18 ns Fall Time t f 12.54 ns Gate Charge Q g 13.6 nC V DS=-20V,V GS=-5V, ID=-3.8A Total Gate Charge Q g 26.1 nC VDS=-20V,V GS=-10V, ID=-3.8AGate-Source Charge Q gs 2.8 nC Gate-Drain Charge Q gd 4.8 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) VSD -0.85 -1.2 V T J=25 /H11034C, I S=-3.4A, VGS=0V Reverse Recovery Time (3) trr 27.2 ns T J=25 /H11034C, I F=-3A, di/dt= 100A/ /H9262s Reverse Recovery Charge (3) Qrr 25.4 nC ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). NOTES (1) Measured under pulsed conditions. Width /H11349300µs. Duty cycle /H113492%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.
Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc
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