Microsoft Word - ZXMP3F37DN8_R3.docx
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Document Number DS33582 Rev 3 - 3 1 of 8 www.diodes.com May 2013 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMP3F37DN8 ADVANCE INFORMATION DISCONTINUED 30V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) Max ID TA = 25C (Notes 4 & 6) -30V 25m @ VGS= -10V -8.3A 41m @ VGS= -4.5V -6.5A Description and Applications This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. DC-DC Converters Power Management functions Disconnect Switches Motor control Features and Benefits Low on-resistance Fast switching speed Low threshold Low gate drive “Lead-Free”, RoHS compliant (Note 1) Halogen and Antimony Free. “Green” Device (Note 1) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1) Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish; Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (approximate) Ordering Information (Note 1) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXMP3F37DN8TA ZXMP3F37D 7 12 500 Notes: 1. Diodes, Inc. defines “Green” products as those whic h are RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website. Marking Information Equivalent Circuit ZXMP3F37D = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 11 = 2011) WW = Week (01 - 53) Top View SO-8 Top View D1S1
Document Number DS33582 Rev 3 - 3 2 of 8 www.diodes.com May 2013 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMP3F37DN8 ADVANCE INFORMATION DISCONTINUED Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source voltage VDSS -30 V Gate-Source voltage VGS 20 V Continuous Drain current VGS = -10V (Notes 3 & 5) ID -7.3 A TA = 70°C (Notes 3 & 5) -5.9 (Notes 2 & 5) -5.7 (Note 7) -8.3 Pulsed Drain current (Notes 4) IDM -36 A Continuous Source current (Body diode) (Notes 3) IS -3.5 A Pulsed Source current (Body diode) (Notes 4) ISM -36 A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Power dissipation Linear derating factor (Notes 2 & 5) P D 1.25 10.0 W mW/C (Notes 2 & 6) 1.81 (Notes 3 & 5) 2.1 (Notes 2 & 7) 2.7 Thermal Resistance, Junction to Ambient (Notes 2 & 5) RJA 100 C/W (Notes 2 & 6) 70 (Notes 3 & 5) 60 Thermal Resistance, Junction to Lead (Notes 2 & 7) RJL 46 Operating and storage temperature range TJ, TSTG -55 to +150 C Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 3. For a dual device surface mounted on FR4 PCB measured at t ≤ 10 sec. 4. Repetitive rating on 25mm X 25mm FR4 PCB, pulsed with D = 0.02 and pulse width 300µs – pulse width limited by maximum junction temperature. 5. For a dual device with one active die. 6. For a device with two active die running at equal power. 7. Thermal resistance from junction to solder-point (at the end of the drain lead).
Document Number DS33582 Rev 3 - 3 3 of 8 www.diodes.com May 2013 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMP3F37DN8 ADVANCE INFORMATION DISCONTINUED Thermal Characteristics 100m 1 10 10m 100m 100 Single Pulse Tamb=25°C One active die RDS(on) Limited 100µs 1ms 10ms 100ms DC Safe Operating Area -ID Drain Current (A) -VDS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Two active die One active die Derating Curve Temperature (°C) Max Power Dissipation (W) 100µ 1m 10m 100m 1 10 100 1k 100 110 Tamb=25°C One active die Transient Thermal Impedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 Thermal Resistance (°C/W)Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k 100 Single Pulse Tamb=25°C One active die Pulse Power Dissipation Pulse Width (s) Maximum Power (W)
Document Number DS33582 Rev 3 - 3 4 of 8 www.diodes.com May 2013 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMP3F37DN8 ADVANCE INFORMATION DISCONTINUED Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS -30 V ID = -250A, VGS= 0V Zero Gate Voltage Drain Current IDSS -0.5 A VDS = -30V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) -1.0 -3.0 V ID = -250A, VDS = VGS Static Drain-Source On-Resistance (Note 8) RDS (ON) 25 mΩ VGS = -10V, ID = -7.1A 41 VGS = -4.5V, ID = -5.5A Forward Transconductance (Notes 8 & 9) gfs 18.6 S VDS = -15V, ID = -7.1A Diode Forward Voltage (Note 8) VSD -0.8 -1.2 V IS = -1.7A, VGS = 0V Reverse recovery time (Note 9) trr 16.2 ns IS = -2.2A, di/dt = 100A/s Reverse recovery charge (Note 9) Qrr 10 nC DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss 1678 pF VDS = -15V, VGS = 0V f = 1MHz Output Capacitance Coss 303 pF Reverse Transfer Capacitance Crss 178 pF Total Gate Charge (Note 10) Qg 31.6 nC VGS = -10V, VDS = -15V, ID = -7.1A Gate-Source Charge (Note 10) Qgs 4.3 nC Gate-Drain Charge (Note 10) Qgd 6.2 nC Turn-On Delay Time (Note 10) tD(on) 3.5 ns VDD = -15V, VGS = -10V ID = -1A, RG 6.0 Turn-On Rise Time (Note 10) tr 4.9 ns Turn-Off Delay Time (Note 10) tD(off) 44 ns Turn-Off Fall Time (Note 10) tf 28 ns Notes: 8. Measured under pulsed conditions. Pulse width 300s; duty cycle 2% 9. For design aid only, not subject to production testing. 10. Switching characteristics are independent of operating junction temperatures.
Document Number DS33582 Rev 3 - 3 5 of 8 www.diodes.com May 2013 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMP3F37DN8 ADVANCE INFORMATION DISCONTINUED Typical Characteristics 0.1 1 10 0.1 0.1 1 10 0.01 0.1 0.1 -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 0.01 0.1 1E-3 0.01 0.1 2.5V 10V 3.5V4.5V Output Characteristics T = 25°C VGS -ID Drain Current (A) -VDS Drain-Source Voltage (V) 10V 2.5V 3.5V Output Characteristics T = 150°C VGS -ID Drain Current (A) -VDS Drain-Source Voltage (V) Typical Transfer Characteristics VDS = 10V T = 25°C T = 150°C -ID Drain Current (A) -VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(on) VGS = 10V ID = 7.1A VGS(th) VGS = VDS ID = 250uA Normalised RDS(on) and VGS(th) Tj Junction Temperature (°C) 2.5V 10V 3.5V On-Resistance v Drain Current T = 25°C VGS RDS(on) Drain-Source On-Resistance () -ID Drain Current (A) Vgs = 0V T = 150°C T = 25°C Source-Drain Diode Forward Voltage -VSD Source-Drain Voltage (V) -ISD Reverse Drain Current (A)
Document Number DS33582 Rev 3 - 3 6 of 8 www.diodes.com May 2013 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMP3F37DN8 ADVANCE INFORMATION DISCONTINUED Typical Characteristics - continued 11 0 500 1000 1500 2000 2500 CRSS COSS CISS VGS = 0V f = 1MHz C Capacitance (pF) -VDS - Drain - Source Voltage (V) 0 5 10 15 20 25 30 35 ID = 7.1A VDS = 15V Gate-Source Voltage v Gate ChargeCapacitance v Drain-Source Voltage Q - Charge (nC) -VGS Gate-Source Voltage (V) Test Circuits
Document Number DS33582 Rev 3 - 3 7 of 8 www.diodes.com May 2013 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMP3F37DN8 ADVANCE INFORMATION DISCONTINUED Package Outline Dimensions Suggested Pad Layout SO-8 Dim Min Max A - 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h - 0.35 L 0.62 0.82 0 8 All Dimensions in mm Dimensions Value (in mm) X 0.60 Y 1.55 C1 5.4 C2 1.27 Gauge Plane Seating Plane Detail ‘A’ Detail ‘A’ EE1 h L D e b A 45° 7°~9° 0.254 X Y
Document Number DS33582 Rev 3 - 3 8 of 8 www.diodes.com May 2013 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMP3F37DN8 ADVANCE INFORMATION DISCONTINUED IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does Diodes Inco rporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability what soever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes In corporated products for any unintended or unauthorized application, Customers shall i ndemnify and hold Diodes Incorporated and its representatives harmless agains t all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or system s are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when prop erly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporate d and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2013, Diodes Incorporated www.diodes.com