ZXMP10A18K

ZXMP10A18K

Document overview

• Manufacturer or author: Diodes Incorporated
• PDF pages: 7

Technical content

D S G ZXMP10A18K P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) max ID TA = +25°C (Note 6) -100V 150mΩ@ VGS = -10V -5.9A 190mΩ@ VGS =-6V -5.1A

Description

This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications.

Applications

• DC-DC Converters
• Power Management Functions
• Disconnect Switches
• Motor Control Features and Benefits
• Low On-Resistance
• Fast Switching Speed
• Low Threshold
• Low Gate Drive
• DPAK Package
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
• Case: TO252 (DPAK)
• Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1)
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See diagram below
• Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208
• Weight: 0.315 grams (Approximate) Ordering Information (Note 4) Part Number Compliance Case Packaging ZXMP10A18KTC Standard TO252 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Marking Information Top View TO252 Top View Pin Out Equivalent circuit ZXMP10A18 = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 10 = 2010) WW = Week (01 - 53) ZXMP10A18K Document number: DS33599 Rev. 2 - 2 1 of 7 www.diodes.com August 2014 © Diodes Incorporated

Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -100 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current TA = +25°C (Note 6) ID -5.9 A TA = +70°C (Note 6) -4.7 TA = +25°C (Note 5) -3.8 Pulsed Drain Current (Note 7) IDM -21.1 A Continuous Source Current (Body Diode) (Note 6) IS -10 A Pulsed Source Current (Body Diode) (Note 7) ISM -21.1 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 5) Linear Derating Factor TA = +25°C (Note 5) PD 4.3 W 34.4 mW/°C TA = +25°C (Note 6) 10.2 W 81.3 mW/°C TA = +25°C (Note 8) 2.17 W 17.4 mW/°C Thermal Resistance, Junction to Ambient (Note 5) RθJA °C/W (Note 6) 12.3 (Note 8) 57.6 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 5. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. 6. For a device surface mounted on FR4 PCB measured at t ≤10 sec. 7. Repetitive rating on 50mm x 50mm x 1.6mm FR4 PCB, D=0.02, pulse width=300μs – pulse width limited by maximum junction temperature. 8. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. ZXMP10A18K Document number: DS33599 Rev. 2 - 2 2 of 7 www.diodes.com August 2014 © Diodes Incorporated

Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS -100   V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current IDSS   -1 μA VDS = -100V, VGS = 0V Gate-Source Leakage IGSS   ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) -2  -4 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance (Note 9) RDS (ON)   150 190 mΩ VGS = -10V, ID = -2.8A VGS = -6V, ID = -2.4A Forward Transconductance (Notes 9 & 11) gfs  6  S VDS = -15V, ID = -2.8A DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance Ciss  1055  pF VDS = -50V, VGS = 0V, f = 1MHz Output Capacitance Coss  90  pF Reverse Transfer Capacitance Crss  76  pF SWITCHING CHARACTERISTICS (Notes 10 & 11) Turn-On Delay Time td(on)  4.9  ns VDS = -50V, VGS = -10V, ID = -1A, RG = 6Ω Rise Time tr  6.8  Turn-On Delay Time td(off)  33.9  Rise Time tf  17.9  Total Gate Charge Qg  26.9  nC VDS = -50V, VGS = -10V, ID = -2.8A Gate-Source Charge Qgs  3.9  Gate-Drain Charge Qgd  10.2  SOURCE-DRAIN DIODE CHARACTERISTICS Diode Forward Voltage (Note 9) VSD  -0.85 -0.95 V TJ = +25°C , VGS = 0V, IS = -3.5A Reverse Recovery Time (Note 11) trr  49  ns TJ = +25°C, IS = -2.8A, di/dt=100A/μs, Reverse Recovery Charge (Note 11) Qrr  107  nC Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%. 10. Switching characteristics are independent of operating junction temperature. 11. For design aid only, not subject to production testing. ZXMP10A18K Document number: DS33599 Rev. 2 - 2 3 of 7 www.diodes.com August 2014 © Diodes Incorporated

Document number: DS33599 Rev. 2 - 2 4 of 7 www.diodes.com August 2014 © Diodes Incorporated

Document number: DS33599 Rev. 2 - 2 5 of 7 www.diodes.com August 2014 © Diodes Incorporated

Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. E D b2( 2x) b( 3x) e c A 7°±1° H Seating Plane Gauge Plane a 0.508 L 2.74REF TO252 (DPAK) Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 - - e - - 2.286 E 6.45 6.70 6.58 E1 4.32 - - H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° - All Dimensions in mm Dimensions Value (in mm) C 4.572 X 1.060 X1 5.632 Y 2.600 Y1 5.700 Y2 10.700 X Y C ZXMP10A18K Document number: DS33599 Rev. 2 - 2 6 of 7 www.diodes.com August 2014 © Diodes Incorporated

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