ZXMP10A18G

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 8

Technical content

Document number: DS33598 Rev. 5 - 3 1 of 8 www.diodes.com June 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMP10A18G 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS RDS(ON) Max ID Max TA = +25°C -100V 150mΩ @ VGS = -10V -3.7A 190mΩ @ VGS = -6V -3.3A Description and Applications This MOSFET is designed to minimize the on -state resistance yet maintain superior switching performance, making it ideal for high - efficiency power-management applications.

  • Motor control
  • DC-DC converters
  • Power-management functions
  • Relay and solenoid driving Features and Benefits
  • Low On-Resistance
  • Fast Switching Speed
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotive- products/.
  • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/ Mechanical Data
  • Package: SOT223
  • Package Material: Molded Plastic, UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Method 208
  • Weight: 0.112 grams (Approximate) Ordering Information (Note 4) Orderable Part Number Marking Reel Size (inches) Tape Width (mm) Packing Qty. Carrier ZXMP10A18GTA ZXMP10A18 7 12 1,000 Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions appli ed. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/ Marking Information Equivalent Circuit D S GTop View SOT223 (Type DN) Pinout - Top View ZXMP10A18 =Product Type Marking Code YWW = Date Code Marking Y or Y= Last Digit of Year (ex: 6 = 2026) WW or WW = Week Code (01 to 53) SOT223 (Type DN) Green THE ZXMP10A18G IS NOT RECOMMENDED FOR NEW DESIGNS. PLEASE CONTACT US.

Document number: DS33598 Rev. 5 - 3 2 of 8 www.diodes.com June 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMP10A18G Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS -100 V Gate-Source Voltage VGSS 20 V Continuous Drain Current VGS = 10V (Note 6) ID -3.7 A TA = +70° C (Note 6) -3.0 (Note 5) -2.6 Pulsed Drain Current VGS = 10V (Note 7) IDM -16.5 A Continuous Source Current (Body Diode) (Note 6) IS -3.7 A Pulsed Source Current (Body Diode) (Note 7) ISM -16.5 A Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation Linear Derating Factor (Note 5) PD 2.0 16 W mW/°C (Note 6) 3.9 Thermal Resistance, Junction to Ambient (Note 5) RθJA 62.5 °C/W (Note 6) 32.2 Thermal Resistance, Junction to Lead (Note 8) RθJL 7.65 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air condi tions; the device is measured when operating in a steady-state condition. 6. Same as Note 5, except the device is measured at t  10 seconds. 7. Same as Note 5, except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature. 8. Thermal resistance from junction to solder point (at the end of the drain lead).

Document number: DS33598 Rev. 5 - 3 3 of 8 www.diodes.com June 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMP10A18G Thermal Characteristics 1 10 100 10m 100m Single Pulse T amb = 25°C R DS(on) Limited 100µs 1ms 10ms 100ms DC Safe Operating Area -ID Drain Current (A) -VDS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 160 0.0 0.4 0.8 1.2 1.6 2.0 Derating Curve Temperature (° C) Max Power Dissipation (W) 100µ 1m 10m 100m 1 10 100 1k T amb = 25°C Transient Thermal Impedance D= 0.5 D= 0.2 D= 0.1 Single Pulse D= 0.05 Thermal Resistance (° C/W)Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k 100 Single Pulse T amb = 25°C Pulse Power Dissipation Pulse Width (s) Maximum Power (W)

Document number: DS33598 Rev. 5 - 3 4 of 8 www.diodes.com June 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMP10A18G Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS -100 — — V ID = -250µA, VGS = 0 Zero Gate Voltage Drain Current IDSS — — -1 µA VDS = -100V, VGS = 0 Gate-Source Leakage IGSS — — 100 nA VGS = 20V, VDS = 0 ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) -2.0 — -4.0 V ID = -250µA, VDS = VGS Static Drain-Source On-Resistance (Note 9) RDS(ON) — — 150 mΩ VGS = -10V, ID = -2.8A 190 VGS = -6V, ID = -2.4A Forward Transconductance (Notes 9 & 10) gfs — 6.0 — S VDS = -15V, ID = -2.8A Diode Forward Voltage (Note 9) VSD — -0.85 -0.95 V IS = -3.5A, VGS = 0, TJ = +25° C Reverse-Recovery Time (Note 10) trr — 49 — ns IS = -2.8A, di/dt = 100A/µs, TJ = +25° C Reverse-Recovery Charge (Note 10) Qrr — 107 — nC DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Ciss — 1055 — pF VDD = -50V, VGS = 0, f = 1MHz Output Capacitance Coss — 90 — pF Reverse Transfer Capacitance Crss — 76 — pF Total Gate Charge (Note 11) Qg — 26.9 — nC VGS = -10V, VDS = -50V, ID = -2.8A Gate-Source Charge (Note 11) Qgs — 3.9 — nC Gate-Drain Charge (Note 11) Qgd — 10.2 — nC Turn-On Delay Time (Note 11) tD(ON) — 4.6 — ns VDD = -50V, VGS = -10V, ID = -1A, RG  6.0Ω Turn-On Rise Time (Note 11) tr — 6.8 — ns Turn-Off Delay Time (Note 11) tD(OFF) — 33.9 — ns Turn-Off Fall Time (Note 11) tf — 17.9 — ns Notes: 9. Measured under pulsed conditions. Pulse width  300s; duty cycle  2%. 10. For design aid only, not subject to production testing. 11. Switching characteristics are independent of operating junction temperatures.

Document number: DS33598 Rev. 5 - 3 5 of 8 www.diodes.com June 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMP10A18G Typical Characteristics 0.1 1 10 0.01 0.1 0.1 1 10 0.1 3 4 5 0.1 -50 0 50 100 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 1 10 0.1 100 0.01 0.1 10V 4.5V -VGS 3.5V Output Characteristics T = 25° C -VGS -ID Drain Current (A) -VDS Drain-Source Voltage (V) 4.5V 10V 3.5V Output Characteristics T = 150° C -ID Drain Current (A) -VDS Drain-Source Voltage (V) Typical Transfer Characteristics -VDS = 10V T = 25° C T = 150° C -ID Drain Current (A) -VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(on) VGS = -10V ID = - 2.8A VGS(th) VGS = VDS ID = -250uA Normalised RDS(on) and VGS(th) Tj Junction Temperature (° C) 4.5V 10V 3.5V On-Resistance v Drain Current T = 25° C-VGS RDS(on) Drain-Source On-Resistance () -ID Drain Current (A) T = 150° C T = 25° C Source-Drain Diode Forward Voltage -VSD Source-Drain Voltage (V) -ISD Reverse Drain Current (A) Normalised RDS(on) and VGS(th) RDS(on) Drain-Source On-Resistance (Ω)

Document number: DS33598 Rev. 5 - 3 6 of 8 www.diodes.com June 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMP10A18G Typical Characteristics (continued) 0.1 1 10 100 200 400 600 800 1000 1200 1400 1600 1800 CRSS COSS CISS VGS = 0V f = 1MHz C Capacitance (pF) -VDS - Drain - Source Voltage (V) 0 2 4 6 8 10 12 14 16 18 20 22 24 26 ID = -2.8A VDS = -50V Gate-Source Voltage v Gate ChargeCapacitance v Drain-Source Voltage Q - Charge (nC) -VGS Gate-Source Voltage (V) Test Circuits

Document number: DS33598 Rev. 5 - 3 7 of 8 www.diodes.com June 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMP10A18G Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT223 (Type DN) SOT223 (Type DN) Dim Min Max Typ A -- 1.70 -- A1 0.01 0.15 -- A2 1.50 1.68 1.60 b 0.60 0.80 0.70 b2 2.90 3.10 -- c 0.20 0.32 -- D 6.30 6.70 -- E 6.70 7.30 -- E1 3.30 3.70 -- e -- -- 2.30 e1 -- -- 4.60 L 0.85 -- -- All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT223 (Type DN) Dimensions Value (in mm) C 2.30 C1 6.40 X 1.20 X1 3.30 Y 1.60 Y1 1.60 Y2 8.00 Y X C C1 Y2 A1A D b e C E L 0.25 Seating Plane Gauge Plane

Document number: DS33598 Rev. 5 - 3 8 of 8 www.diodes.com June 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMP10A18G IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICUL AR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes ’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes’ products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications, (c) ensuring their applications, which inco rporate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and functional - safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality co ntrol techniques , redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. 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