ZXMP10A13F_15 DIODES | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 8
Technical content
Features
Fast Switching Speed Low Input Capacitance Low Gate Charge Low Threshold Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Case: SOT-23 Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate) Ordering Information (Notes 4 & 5) Part Number Compliance Case Quantity per reel ZXMP10A13FTA Standard SOT23 3,000 ZXMP10A13FQTA Automotive SOT23 3,000 ZXMP10A13FTC Standard SOT23 10,000 ZXMP10A13FQTC Automotive SOT23 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/ . Marking Information Top View Equivalent Circuit D S GTop View Pin Out D S G SOT-23 7P1 = Product Type Marking Code 7P1 SOT-23
Document number: DS33596 Rev. 4 - 2 2 of 8 www.diodes.com April 2015 © Diodes Incorporated ZXMP10A13F Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS -100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current VGS = 10V (Note 6) TA = +70°C (Note 6) (Note 6) ID -0.7 -0.5 -0.6 A Pulsed Drain Current (Note 8) IDM -3.1 A Continuous Source Current (Body Diode) (Note 6) IS -1.1 A Pulsed Source Current (Body Diode) (Note 8) ISM -3.1 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 6) Linear Derating Factor PD 625 mW mW/°C Power Dissipation (Note 7) Linear Derating Factor PD 806 6.4 mW mW/°C Thermal Resistance, Junction to Ambient (Note 6) RθJA 200 °C/W Thermal Resistance, Junction to Ambient (Note 7) RθJA 155 °C/W Thermal Resistance, Junction to Leads (Note 9) RθJL 194 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 6. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions 7. For a device surface mounted on FR4 PCB measured at t ≤5 secs. 8. Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10μs - pulse current limited by maximum junction temperature. 9. Thermal resistance from junction to solder-point (at the end of the drain lead).
Document number: DS33596 Rev. 4 - 2 3 of 8 www.diodes.com April 2015 © Diodes Incorporated ZXMP10A13F Thermal Characteristics 1 10 100 10m 100m Single Pulse Tamb=25°C RDS(on) Limited 100µs 1ms 10ms 100ms DC Safe Operating Area -ID Drain Current (A) -VDS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 160 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Derating Curve Temperature (°C) Max Power Dissipation (W) 100µ 1m 10m 100m 1 10 100 1k 100 150
200 Tamb=25°C
Transient Thermal Impedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 Thermal Resistance (°C/W)Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k Single Pulse Tamb=25°C Pulse Power Dissipation Pulse Width (s) Maximum Power (W)
Document number: DS33596 Rev. 4 - 2 4 of 8 www.diodes.com April 2015 © Diodes Incorporated ZXMP10A13F Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS -100 V ID = -250µA, VGS = 0V Zero Gate Voltage Drain Current IDSS -1.0 µA VDS = -100V, VGS = 0V Gate-Source Leakage IGSS ±100 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) -2.0 -4.0 V ID = -250µA, VDS = VGS Static Drain-Source On-Resistance (Note 10) RDS (on) 1.0 Ω VGS = -10V, ID = -0.6A 1.45 VGS = -6.0V, ID = -0.5A Forward Transconductance (Notes 10 and 12) gfs 1.2 S VDS = -15V, ID = -0.6A Diode Forward Voltage (Note 10) VSD -0.85 -0.95 V TJ = +25°C, IS = -0.75A, VGS = 0V Reverse Recovery Time (Note 12) trr 29 ns TJ = +25°C, IF = -0.9A, di/dt = 100A/µs Reverse Recovery Charge (Note 12) Qrr 31 nC DYNAMIC CHARACTERISTICS (Note 12) Input Capacitance Ciss 141 pF VDS = -50V, VGS = 0V f = 1.0MHz Output Capacitance Coss 13.1 Reverse Transfer Capacitance Crss 10.8 Turn-On Delay Time (Note 11) tD(on) 1.6 ns VDD = -50V, ID = -1.0A, RG 6.0Ω VGS = -10V Turn-On Rise Time (Note 11) tr 2.1 Turn-Off Delay Time (Note 11) tD(off) 5.9 Turn-Off Fall Time (Note 11) tf 3.3 Total Gate Charge (Note 11) Qg 1.8 nC VDS = -50V, VGS = -5.0V, ID = -0.6A Total Gate Charge (Note 11) Qg 3.5 nC VDS = -50V, VGS = -10V, ID = -0.6A Gate-Source Charge (Note 11) Qgs 0.6 Gate-Drain Charge (Note 11) Qgd 1.6 Notes: 10. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%. 11. Switching characteristics are independent of operating jun ction temperature. 12. For design aid only, not subject to production testing.
Document number: DS33596 Rev. 4 - 2 5 of 8 www.diodes.com April 2015 © Diodes Incorporated ZXMP10A13F Typical Characteristics 0.1 1 10 1E-3 0.01 0.1 0.1 1 10 1E-3 0.01 0.1 3 4 5 0.01 0.1 -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0.01 0.1 1 10 100 0.01 0.1 10V 4.5V -VGS 3.5V Output Characteristics T = 25°C -VGS -ID Drain Current (A) -VDS Drain-Source Voltage (V) 4.5V 7V10V 3.5V Output Characteristics T = 150°C -ID Drain Current (A) -VDS Drain-Source Voltage (V) Typical Transfer Characteristics -VDS = 10V T = 25°C T = 150°C -ID Drain Current (A) -VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(on) VGS = -10V ID = - 0.6A VGS(th) VGS = VDS ID = -250uA Normalised RDS(on) and VGS(th) Tj Junction Temperature (°C) 4.5V 10V 3.5V On-Resistance v Drain Current T = 25°C-VGS RDS(on) Drain-Source On-Resistance -ID Drain Current (A) T = 150°C T = 25°C Source-Drain Diode Forward Voltage -VSD Source-Drain Voltage (V) -ISD Reverse Drain Current (A) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1 2 3 4 5 6 7 8 Typical Transfer Characteristics -V , GATE-SOURCE VOLTAGE (V)GS -I , DRAIN CURRENT (A)D T = 125°CA T = 150°CA T = -55°CA T = 25°CA T = 85°CA V = 10VDS
Document number: DS33596 Rev. 4 - 2 6 of 8 www.diodes.com April 2015 © Diodes Incorporated ZXMP10A13F Typical Characteristics (cont.) 0.1 1 10 100 100 150 200 CRSS COSS CISS VGS = 0V f = 1MHz C Capacitance (pF) -VDS - Drain - Source Voltage (V) 0 1 2 3 4 ID = -0.6A VDS = -50V Gate-Source Voltage v Gate ChargeCapacitance v Drain-Source Voltage Q - Charge (nC) -VGS Gate-Source Voltage (V) Test Circuits
Document number: DS33596 Rev. 4 - 2 7 of 8 www.diodes.com April 2015 © Diodes Incorporated ZXMP10A13F Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 8° All Dimensions in mm Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 J K1 K GAUGE PLANE 0.25 H L M All 7° A C B D GF a X E Y CZ
Document number: DS33596 Rev. 4 - 2 8 of 8 www.diodes.com April 2015 © Diodes Incorporated ZXMP10A13F IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorpor ated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized ap plication, Customers shall indemnify and hold Diodes Incor porated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in Engl ish but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized f or use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemni fy Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com