ZXMP10A13F

Document overview

  • Manufacturer or author: Diodes Incorporated
  • PDF pages: 8

Technical content

Document number: DS33596 Rev. 6 - 2 1 of 8 www.diodes.com April 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMP10A13F 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS Max RDS(ON) Max ID TA = +25° C -100V 1Ω @ VGS = -10V -0.7A Description and Applications This MOSFET utilizes a unique structure that combines the b enefits of low on -resistance with fast switching speed, making it ideal for high-efficiency power-management applications.

  • DC-DC converters
  • Power-management functions
  • Disconnect switches
  • Motor control Features and Benefits
  • Fast Switching Speed
  • Low Input Capacitance
  • Low Gate Charge
  • Low Threshold
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/
  • An automotive-compliant part is available under a separate datasheet (ZXMP10A13FQ) Mechanical Data
  • Package: SOT23
  • Package Material: Molded Plastic, UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208
  • Weight: 0.009 grams (Approximate) Ordering Information (Note 4) Orderable Part Number Package Packing Qty. Carrier ZXMP10A13FTA SOT23 3,000 Tape & Reel ZXMP10A13FTC SOT23 10,000 Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Top View Equivalent Circuit D S GTop View Pin Out D S G SOT23 7P1 = Product Type Marking Code 7P1 SOT23

Document number: DS33596 Rev. 6 - 2 2 of 8 www.diodes.com April 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMP10A13F Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS -100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current VGS = 10V TA = +25° C (Note 6) TA = +70° C (Note 6) TA = +70° C (Note 5) ID -0.7 -0.5 -0.6 A Pulsed Drain Current (Note 7) IDM -3.1 A Continuous Source Current (Body Diode) (Note 5) IS -1.1 A Pulsed Source Current (Body Diode) (Note 7) ISM -3.1 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) Linear Derating Factor PD 625 mW mW/° C Power Dissipation (Note 6) Linear Derating Factor PD 806 6.4 mW mW/° C Thermal Resistance, Junction to Ambient (Note 5) RθJA 200 ° C/W Thermal Resistance, Junction to Ambient (Note 6) RθJA 155 ° C/W Thermal Resistance, Junction to Leads (Note 8) RθJL 194 ° C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions . 6. For a device surface mounted on FR4 PCB measured at t ≤ 5 secs. 7. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width = 10μs - pulse current limited by maximum junction temperature. 8. Thermal resistance from junction to solder-point (at the end of the drain lead).

Document number: DS33596 Rev. 6 - 2 3 of 8 www.diodes.com April 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMP10A13F Thermal Characteristics (continued) 1 10 100 10m 100m Single Pulse Tamb=25° C RDS(on) Limited 100µ s 1ms 10ms 100ms DC Safe Operating Area -ID Drain Current (A) -VDS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 160 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Derating Curve Temperature (° C) Max Power Dissipation (W) 100µ 1m 10m 100m 1 10 100 1k 100 150

200 Tamb=25° C

Transient Thermal Impedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 Thermal Resistance (° C/W)Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k Single Pulse Tamb=25° C Pulse Power Dissipation Pulse Width (s) Maximum Power (W) TAMB = 25oC 100μs (oC) TAMB = 25oC TAMB = 25oC 100µ 100µ

Document number: DS33596 Rev. 6 - 2 4 of 8 www.diodes.com April 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMP10A13F Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS -100 — — V ID = -250µA, VGS = 0 Zero Gate Voltage Drain Current IDSS — — -1.0 µA VDS = -100V, VGS = 0 Gate-Source Leakage IGSS — — ±100 nA VGS = 20V, VDS = 0 ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) -2.0 — -4.0 V ID = -250µA, VDS = VGS Static Drain-Source On-Resistance (Note 9) RDS(ON) — — 1.0 Ω VGS = -10V, ID = -0.6A 1.45 VGS = -6.0V, ID = -0.5A Forward Transconductance (Notes 9 & 11) gFS — 1.2 — S VDS = -15V, ID = -0.6A Diode Forward Voltage (Note 9) VSD — -0.85 -0.95 V TJ = +25° C, IS = -0.75A, VGS = 0 Reverse Recovery Time (Note 11) tRR — 29 — ns TJ = +25° C, IF = -0.9A, di/dt = 100A/µs Reverse Recovery Charge (Note 11) QRR — 31 — nC DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance Ciss — 141 — pF VDS = -50V, VGS = 0 f = 1.0MHz Output Capacitance Coss — 13.1 — Reverse Transfer Capacitance Crss — 10.8 — Turn-On Delay Time (Note 10) tD(ON) — 1.6 — ns VDD = -50V, ID = -1.0A, RG  6.0Ω, VGS = -10V Turn-On Rise Time (Note 10) tR — 2.1 — Turn-Off Delay Time (Note 10) tD(OFF) — 5.9 — Turn-Off Fall Time (Note 10) tF — 3.3 — Total Gate Charge (Note 10) Qg — 1.8 — nC VDS = -50V, VGS = -5.0V, ID = -0.6A Total Gate Charge (Note 10) Qg — 3.5 — nC VDS = -50V, VGS = -10V, ID = -0.6A Gate-Source Charge (Note 10) Qgs — 0.6 — Gate-Drain Charge (Note 10) Qgd — 1.6 — Notes: 9. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%. 10. Switching characteristics are independent of operating junction temperature. 11. For design aid only, not subject to production testing.

Document number: DS33596 Rev. 6 - 2 5 of 8 www.diodes.com April 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMP10A13F Typical Characteristics 0.1 1 10 1E-3 0.01 0.1 0.1 1 10 1E-3 0.01 0.1 3 4 50.01 0.1 -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0.01 0.1 1 10 100 0.01 0.1 10V 4.5V -VGS 3.5V Output Characteristics TJ = 25 o C -VGS -ID Drain Current (A) -VDS Drain-Source Voltage (V) 4.5V 7V10V 3.5V Output Characteristics TJ = 150 o C -ID Drain Current (A) -VDS Drain-Source Voltage (V) Typical Transfer Characteristics -VDS = 10V T = 25癈 T = 150癈 -ID Drain Current (A) -VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(ON) VGS = -10V ID = - 0.6A VGS(TH) VGS = VDS ID = -250A Normalised RDS(ON) and VGS(TH) TJ Junction Temperature ( o 4.5V 10V 3.5V On-Resistance v Drain Current TJ = 25 o C-VGS RDS(ON) Drain-Source On-Resistance () -ID Drain Current (A) TJ = 150 o C TJ = 25 o C Source-Drain Diode Forward Voltage -VSD Source-Drain Voltage (V) -ISD Reverse Drain Current (A) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1 2 3 4 5 6 7 8 Typical Transfer Characteristics -V , GATE-SOURCE VOLTAGE (V)GS -I , DRAIN CURRENT (A)D T = 125° CA T = 150° CA T = -55° CA T = 25° CA T = 85° CA V = 10VDS -VGS, Gate-Source Voltage (V) -ID Drain Current (A)

Document number: DS33596 Rev. 6 - 2 6 of 8 www.diodes.com April 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMP10A13F Typical Characteristics (continued) 0.1 1 10 100 100 150 200 CRSS COSS CISS VGS = 0V f = 1MHz C Capacitance (pF) -VDS - Drain - Source Voltage (V) 0 1 2 3 4 ID = -0.6A VDS = -50V Gate-Source Voltage v Gate ChargeCapacitance v Drain-Source Voltage Q - Charge (nC) -VGS Gate-Source Voltage (V) Test Circuits Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit VGS = 0 Ciss Coss Crss

Document number: DS33596 Rev. 6 - 2 7 of 8 www.diodes.com April 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMP10A13F Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 X Y Y1 C Dimensions Value (in mm) C 2.0 X 0.8 X1 1.35 Y 0.9 Y1 2.9 SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -- All Dimensions in mm J K1 K GAUGE PLANE 0.25 H L M All 7° A C B D GF a

Document number: DS33596 Rev. 6 - 2 8 of 8 www.diodes.com April 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMP10A13F IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes ’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who d esign with Diodes’ products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications, (c) ensuring their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality co ntrol techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associ ated with their applications. 3. Diodes assumes no liability for any application -related information, support, assistance or feedback that may be provided by Diodes from time to time. 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