ZXMN2A04DN8 DIODES | Alldatasheet

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Technical content

V(BR)DSS= 20V; RDS(ON)= 0.025 ;I D= 7.7A

DESCRIPTION

This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • Low profile SOIC package

APPLICATIONS

  • DC - DC converters
  • Power management functions
  • Disconnect switches
  • Motor control DEVICE MARKING ZXMN 2A04D ZXMN2A04DN8 ISSUE 1 - JULY 2004 SEMICONDUCTORS1 DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET DEVICE REEL TAPE WIDTH QUANTITY PER REEL ZXMN2A04DN8TA 7 ’‘ 12mm 500 units ZXMN2A04DN8TC 13’‘ 12mm 2500 units

ORDERING INFORMATION

PARAMETER SYMBOL V ALUE UNIT Junction to Ambient (a) (d) R/H9052JA 100 °C/W Junction to Ambient (b) (e) R/H9052JA 70 °C/W Junction to Ambient (b) (d) R/H9052JA 60 °C/W THERMAL RESISTANCE NOTES: (a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured at t /H1134910 sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature. Refer to Trnsient Thermal Impedance Graph. (d) For a dual device with one active die. (e) For dual device with 2 active die running at equal power. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS 20 V Gate Source Voltage V GS /H1100612 V Continuous Drain Current (V GS=10V; T A=25°C) (b) (d) (VGS=10V; T A=70°C) (b) (d) (VGS=10V; T A=25°C) (a) (d) ID 7.7 6.2 5.9 A A A Pulsed Drain Current (c) IDM 38 A Continuous Source Current (Body Diode) (b) IS 2.9 A Pulsed Source Current (Body Diode) (c) ISM 38 A Power Dissipation at T A=25°C (a) (d) Linear Derating Factor PD 1.25 W mW/°C Power Dissipation at T A=25°C (a) (e) Linear Derating Factor PD 1.8 W mW/°C Power Dissipation at T A=25°C (b) (d) Linear Derating Factor PD 2.1 W mW/°C Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL MIN. TYP . MAX. UNIT C ONDITIONS STATIC Drain-Source Breakdown Voltage V (BR)DSS 20 VI D=250 /H9262A, V GS=0V Zero Gate Voltage Drain Current I DSS 0.5 /H9262AV DS=20V, V GS=0V Gate-Body Leakage I GSS 100 nA V GS=/H1100612V, V DS=0V Gate-Source Threshold Voltage V GS(th) 0.7 VI D=250 /H9262A, V DS =V GS Static Drain-Source On-State Resistance (1) RDS(on) 0.025 0.035 Ω /H9024 VGS=4.5V, I D=5.9A VGS=2.5V, I D=5A Forward Transconductance (3) gfs 40 SV DS=10V,I D=5.9A DYNAMIC (3) Input Capacitance C iss 1880 pF VDS=10V, V GS=0V, f=1MHz Output Capacitance C oss 506 pF Reverse Transfer Capacitance C rss 386 pF SWITCHING (2) (3) Turn-On Delay Time t d(on) 7.9 ns VDD =10V, I D=1A RG≅6/H9024,V GS=5V Rise Time t r 14.8 ns Turn-Off Delay Time t d(off) 50.5 ns Fall Time t f 30.6 ns Gate Charge Q g 22.1 nC V DS=15V,V GS=5V, ID=3.5A Total Gate Charge Q g 40.5 nC VDS=10V,V GS=4.5V, ID=5.9A Gate-Source Charge Q gs 5.6 nC Gate-Drain Charge Q gd 8.0 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) VSD 0.85 0.95 VT J=25°C, I S=5.1A, VGS=0V Reverse Recovery Time (3) trr 18.0 ns T J=25°C, I F=1.9A, di/dt= 100A/ µsReverse Recovery Charge (3) Qrr 8.9 nC ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated) NOTES: (1) Measured under pulsed conditions. Width=300/H9262s. Duty cycle /H113492% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

5 SEMICONDUCTORS

7 SEMICONDUCTORS

Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

700 Veterans Memorial Hwy

Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex plc Lansdowne Road, Chadderton Oldham, OL9 9TY United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex Semiconductors plc 2004 DIM INCHES MILLIMETERS MIN MAX MIN MAX A 0.053 0.069 1.35 1.75 A1 0.004 0.010 0.10 0.25 D 0.189 0.197 4.80 5.00 H 0.228 0.244 5.80 6.20 E 0.150 0.157 3.80 4.00 L 0.016 0.050 0.40 1.27 e 0.050 BSC 1.27 BSC b 0.013 0.020 0.33 0.51 c 0.008 0.010 0.19 0.25 /H90520/H110348/H110340/H110348/H11034 h 0.010 0.020 0.25 0.50 PACKAGE DIMENSIONS D E H L c eb Seating Plane Pin 1 A /H9052 PACKAGE OUTLINE CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETRES