ZXMN2A03E6
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 7
Technical content
Document number: DS33516 Rev. 7 - 2 1 of 7 www.diodes.com April 2015 © Diodes Incorporated ZXMN2A03E6 ADVANCE INFORMATION ADVANCED INFORMATION 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(ON) Max ID TA = +25°C 20V 55mΩ @ VGS = 4.5V 4.6A 100mΩ @ VGS = 2.5V 3.4A
Description
This new generation MOSFET is designed to minimize the on -state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Applications
DC-DC Converters Power Management Functions Backlighting Features and Benefits Low Input Capacitance Low On-Resistance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data Case: SOT26 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Tin Finish Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 Weight: 0.018 grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging ZXMN2A03E6TA SOT26 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (< 1500ppm total Br + Cl) and <1000ppm antimony compounds. Marking Information SOT26 Date Code Key Year 2015 2016 2017 2018 2019 2020 2021 2022 Code C D E F G H I J Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D SOT26 Top View Top View Pin Configuration 2A3 = Product Type Marking Code YM = Date Code Marking Y or = Year (ex: C = 2015) M or M = Month (ex: 9 = September) D D G D D S Equivalent Circuit 2A3 Y M
Document number: DS33516 Rev. 7 - 2 2 of 7 www.diodes.com April 2015 © Diodes Incorporated ZXMN2A03E6 ADVANCE INFORMATION ADVANCED INFORMATION Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current, VGS = 10V Steady State TA = +25° C (Note 6) TA = +70° C (Note 6) TA = +25° C (Note 5) ID 4.6 3.7 3.7 A Maximum Body Diode Forward Current (Note 6) IS 2.7 A Pulsed Drain Current (Note 7) IDM 16 A Pulsed Source Current (Note 7) ISM 16 A Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation Linear Derating Factor TA = +25° C (Note 5) PD 1.1 8.8 W mW/° C Total Power Dissipation Linear Derating Factor TA = +25° C (Note 6) PD 1.7 13.6 W mW/° C Thermal Resistance, Junction to Ambient Steady State (Note 5) RθJA 113 ° C/W Steady State (Note 6) 70 ° C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BVDSS 20 V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS 1 µA VDS = 20V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 12V, VDS = 0V ON CHARACTERISTICS (Note 9) Gate Threshold Voltage VGS(TH) 0.7 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance (Note 8) RDS(ON) 55 mΩ VGS = 4.5V, ID = 7.2A 100 VGS = 2.5V, ID = 4.6A Diode Forward Voltage (Note 8) VSD 0.85 0.95 V VGS = 0V, IS = 4.1A Forward Transconductance (Notes 8 & 10) gfs 13 S VDS = 10V, ID = 7.2A DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Ciss 837 pF VDS = 10V, VGS = 0V f = 1.0MHz Output Capacitance Coss 168 Reverse Transfer Capacitance Crss 90 Total Gate Charge Qg 8.2 nC VDS = 10V, ID = 7.2A, VGS = 4.5V Gate-Source Charge Qgs 2.3 Gate-Drain Charge Qgd 2.0 Turn-On Delay Time tD(ON) 4.7 ns VGS = 4.5V, VDD = 10V, RG = 6.0Ω, ID= 1.0A Turn-On Rise Time tR 5.7 Turn-Off Delay Time tD(OFF) 18.5 Turn-Off Fall Time tF 10.5 Body Diode Reverse Recovery Time tRR 12 ns IF = 1.9A, dI/dt = 100A/μs Body Diode Reverse Recovery Charge QRR 4.9 nC Notes: 5. For a device surface mounted on 25mm x 25mm FR -4 PCB with high coverage of single sided 1oz copper, in still air conditions . 6. For a device surface mounted on FR-4 PCB measured at t 5 secs. 7. Repetitive rating 25mm x 25mm FR-4 PCB, D = 0.05, pulse width 10μs - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. 8. Measured under pulsed conditions. Width=300μs. Duty cycle ≤ 2%. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing .
Document number: DS33516 Rev. 7 - 2 3 of 7 www.diodes.com April 2015 © Diodes Incorporated ZXMN2A03E6 ADVANCE INFORMATION ADVANCED INFORMATION
Document number: DS33516 Rev. 7 - 2 4 of 7 www.diodes.com April 2015 © Diodes Incorporated ZXMN2A03E6 ADVANCE INFORMATION ADVANCED INFORMATION
Document number: DS33516 Rev. 7 - 2 5 of 7 www.diodes.com April 2015 © Diodes Incorporated ZXMN2A03E6 ADVANCE INFORMATION ADVANCED INFORMATION
Document number: DS33516 Rev. 7 - 2 6 of 7 www.diodes.com April 2015 © Diodes Incorporated ZXMN2A03E6 ADVANCE INFORMATION ADVANCED INFORMATION Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. SOT26 Dim Min Max Typ A1 0.013 0.10 0.05 A2 1.00 1.30 1.10 A3 0.70 0.80 0.75 b 0.35 0.50 0.38 c 0.10 0.20 0.15 D 2.90 3.10 3.00 e - - 0.95 e1 - - 1.90 E 2.70 3.00 2.80 E1 1.50 1.70 1.60 L 0.35 0.55 0.40 a - - 8° a1 - - 7° All Dimensions in mm Dimensions Value (in mm) C 2.40 C1 0.95 G 1.60 X 0.55 Y 0.80 Y1 3.20 D e E1 E b A2 A1 Seating Plane L c a Y1 G X Y C
Document number: DS33516 Rev. 7 - 2 7 of 7 www.diodes.com April 2015 © Diodes Incorporated ZXMN2A03E6 ADVANCE INFORMATION ADVANCED INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not as sume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license unde r its patent or trademark rights, nor the rights of others. Any Customer or user of this doc ument or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diod es Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Custo mers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product nam es and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the expres s written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety -critical, life support devices or systems, notwithstanding any devices - or systems -related information or support that may be provided by Diodes Incorpora ted. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com