ZXMN2A02X8 DIODES | Alldatasheet

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Technical content

V(BR)DSS = 20V; RDS(ON) = 0.02 ID = 7.8A

DESCRIPTION

This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • Low profile SOIC package

APPLICATIONS

  • DC - DC Converters
  • Power Management Functions
  • Disconnect switches
  • Motor control DEVICE MARKING
  • ZXMN 2A02 ZXMN2A02X8 ISSUE 2 - JANUARY 2005 20V N-CHANNEL ENHANCEMENT MODE MOSFET DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMN2A02X8TA 7” 12mm 1000 units ZXMN2A02X8TC 13” 12mm 4000 units

ORDERING INFORMATION

PARAMETER SYMBOL V ALUE UNIT Junction to Ambient (a) R θJA 113 °C/W Junction to Ambient (b) R θJA 74.5 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t/H1108810 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10/H9262s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. Refer to transient thermal impedance graph. THERMAL RESISTANCE PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS 20 V Gate Source Voltage V GS 20 V Continuous Drain Current V GS=10V; T A=25°C (b) VGS=10V; T A=70°C (b) VGS=10V; T A=25°C (a) ID 7.8 6.3 6.2 A Pulsed Drain Current (c) I DM 39 A Continuous Source Current (Body Diode) (b) I S 3.1 A Pulsed Source Current (Body Diode) (c) I SM 39 A Power Dissipation at T A=25°C (a) Linear Derating Factor PD 1.1 8.8 W mW/°C Power Dissipation at T A=25°C (b) Linear Derating Factor PD 1.67 13.4 W mW/°C Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS.

Tamb=25°C RDS(on) Limited 100µs 1ms 10ms 100ms DC Safe Operating Area ID Drain Current (A) VDS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 1600.0 0.2 0.4 0.6 0.8 1.0 1.2 Derating Curve Temperature (°C) Max Power Dissipation (W) 100µ 1m 10m 100m 1 10 100 1k0 100 110 120 Tamb=25°C Transient Thermal Impedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 Thermal Resistance (°C/W)Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k1 100 Single Pulse Tamb=25°C Pulse Power Dissipation Pulse Width (s) Maximum Power (W) CHARACTERISTICS

PARAMETER SYMBOL MIN. TYP . MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS 20 V ID=250 µA, V GS=0V Zero Gate Voltage Drain Current I DSS 1 µA VDS=20V, V GS=0V Gate-Body Leakage I GSS 100 nA V GS=/H1100612V, V DS=0V Gate-Source Threshold Voltage V GS(th) 0.7 V ID=250 µA, V DS=V GS Static Drain-Source On-State Resistance (1) RDS(on) 0.02 0.04 Ω Ω VGS=4.5V, I D=11A VGS=2.5V, I D=8.4A Forward Transconductance (1)(3) g fs 27 S V DS=10V,I D=11A DYNAMIC (3) Input Capacitance C iss 1900 pF VDS=10 V, V GS=0V, f=1MHzOutput Capacitance C oss 356 pF Reverse Transfer Capacitance C rss 218 pF SWITCHING (2) (3) Turn-On Delay Time t d(on) 7.9 ns VDD =10V, I D=1A RG=6.0 Ω,V GS=4.5V Rise Time t r 10 ns Turn-Off Delay Time t d(off) 33.3 ns Fall Time t f 13.6 ns Total Gate Charge Q g 18.6 nC VDS=10V,V GS=4.5V, ID=11AGate-Source Charge Q gs 5.2 nC Gate-Drain Charge Q gd 4.9 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD 0.85 0.95 V T J=25°C, I S=11.5A, VGS=0V Reverse Recovery Time (3) t rr 16.3 ns T J=25°C, I F=2.1A, di/dt= 100A/ µs Reverse Recovery Charge (3) Q rr 7.8 nC ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated). NOTES (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing.

0.1 1 10 0.1 0.1 1 10 0.1 120.1 -50 0 50 100 1500.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 11 0 0.01 0.1 VGS 2.5V 1.5V Output Characteristics T = 25°C VGS ID Drain Current (A) VDS Drain-Source Voltage (V) 1.5V 2.5V Output Characteristics T = 150°C ID Drain Current (A) VDS Drain-Source Voltage (V) Typical Transfer Characteristics VDS= 10V T = 25°C T = 150°C ID Drain Current (A) VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(on) VGS=4 . 5 V ID = 11A VGS(th) VGS=VDS ID = 250uA Normalised RDS(on)and VGS(th) Tj Junction Temperature (°C) 2.5V 1.5V On-Resistance v Drain Current T = 25°C VGS RDS(on)Drain-Source On-Resistance(Ω) ID Drain Current (A) T = 150°C T = 25°C Source-Drain Diode Forward Voltage VSD Source-Drain Voltage (V) ISD Reverse Drain Current (A) TYPICAL CHARACTERISTICS

0.1 1 100 500 1000 1500 2000 2500 3000 CRSS COSS CISS VGS=0 V f=1 M H z C Capacitance (pF) VDS -D r a i n-S o u r c eV o l t a g e( V ) 0 5 10 15 200.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 ID = 11A VDS= 10V Gate-Source Voltage v Gate ChargeCapacitance v Drain-Source Voltage Q - Charge (nC) VGS Gate-Source Voltage (V) TYPICAL CHARACTERISTICS

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Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex Semiconductors plc 2005 PACKAGE OUTLINE PAD LAYOUT DIM Millimetres Inches DIM Millimetres Inches MIN MAX MIN MAX MIN MAX MIN MAX A /H50071.10 /H50070.043 e 0.65 BSC 0.0256 BSC D 2.90 3.10 0.114 0.122 /H9052° 0 °6 °0 °6 ° PACKAGE DIMENSIONS