ZXMN20B28K

ZXMN20B28K

Document overview

• Manufacturer or author: Diodes Incorporated
• PDF pages: 8

Technical content

Document number: DS31984 Rev. 4 - 3 1 of 8 www.diodes.com June 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMN20B28K 200V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS RDS(ON) MAX ID TA = +25C 200V 750mΩ @ VGS = 10V 2.3A 780mΩ @ VGS = 5V 2.2A Description and Applications This MOSFET features low on -resistance, fast switching and a high avalanche withstand capability , making it ideal for high -efficiency power-management applications.

• SLIC line drivers for VoIP applications
• Transformer driving switches
• Power-management functions
• Motor control
• Uninterrupted power supplies Features and Benefits
• 100% Unclamped Inductive Switch (UIS) Test in Production
• High Avalanche Energy Pulse Withstand Capability
• Low Gate Drive Voltage (Logic Level Capable)
• Low Input Capacitance
• Low On-Resistance
• Fast Switching Speed
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Mechanical Data
• Package: TO252
• Package Material: Molded Plastic “Green” Molding Compound, UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208
• Weight: 0.33 grams (Approximate) Ordering Information (Note 4) Orderable Part Number Package Packing Qty. Carrier ZXMN20B28KTC TO252 (DPAK) 2,500 Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Top View Top View Pinout Equivalent Circuit D S G G S D D TO252 (DPAK) ZXMN 20B28 YYWW ZXMN = Product Type Marking Code, Line 1 20B28 = Product Type Marking Code, Line 2 YYWW = Date Code Marking YY = Year (ex: 26 = 2026) WW = Week (01 to 53) THE ZXMN20B28K IS NOT RECOMMENDED FOR NEW DESIGNS. PLEASE CONTACT US.

Document number: DS31984 Rev. 4 - 3 2 of 8 www.diodes.com June 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMN20B28K Maximum Ratings (@TA = 25°C, unless otherwise specified) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 200 V Gate-Source Voltage VGS 20 V Single Pulsed Avalanche Energy (Note 10) EAS 73 mJ Single Pulsed Avalanche Current (Note 10) IAS 5.5 A Repetitive Avalanche Energy (Note 7) EAR 4.5 mJ Repetitive Avalanche Current (Note 7) IAR 5.5 A Continuous Drain Current VGS = 10V (Note 6) TA = +70°C (Note 6) (Note 5) ID 2.3 1.8 1.5 A Pulsed Drain Current VGS = 10V (Note 7) IDM 17.3 A Continuous Source Current (Body Diode) (Note 5) IS 2.3 A Pulsed Source Current (Body Diode) (Note 7) ISM 17.3 A Thermal Characteristics (@ TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation Linear Derating Factor (Note 5) PD 4.3 34.4 W mW/°C (Note 6) 10.2 76.0 (Note 9) 2.2 17.4 Thermal Resistance, Junction to Ambient (Note 5) RJA 29.1 °C/W (Note 6) 12.3 (Note 9) 57.3 Thermal Resistance, Junction to Lead (Note 8) RJL 1.15 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to 150 °C Notes: 5. For a device surface-mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single -sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Same as note 5, except the device is measured at t  10 sec. 7. Same as note 5, except the device is operating in a repetitive state with pulse width and duty cycle limited by maximum junction temperature. 8. Thermal resistance from junction to solder-point (at the end of the drain lead). 9. For a device surface-mounted on 25mm x 25mm x 1.6mm FR4 PCB with the high coverage single-sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 10. UIS in production with L = 4.83mH, IAS = 5.5A, RG = 25Ω, VDD = 100V, starting TJ = +25°C.

Document number: DS31984 Rev. 4 - 3 3 of 8 www.diodes.com June 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMN20B28K Thermal Characteristics 100µ 1m 10m 100m 1 10 100 1k 1 10 100 10m 100m 1 10 100 10m 100m Tamb=25°C 25mm x 25mm 1oz FR4 RDS(on) Limited 100µs 1ms 10ms 100ms 1sDC Safe Operating Area ID Drain Current (A) VDS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 160 50mm x 50mm 2oz FR4 25mm x 25mm 1oz FR4 Derating Curve Temperature (°C) Max Power Dissipation (W) 100µ 1m 10m 100m 1 10 100 1k Tamb=25°C 25mm x 25mm 1oz FR4 Transient Thermal Impedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 Thermal Resistance (°C/W)Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k 100 25mm x 25mm 1oz FR4 50mm x 50mm 2oz FR4 Safe Operating Area Single Pulse Tamb=25°C Pulse Power Dissipation Pulse Width (s) Max Power Dissipation (W) D=0.1 D=0.05 Single Pulse D=0.2 D=0.5 Tamb=25°C 50mm x 50mm 2oz FR4 Transient Thermal Impedance Pulse Width (s) Thermal Resistance (°C/W) Tamb=25°C 50mm x 50mm 2oz FR4 100µs 1ms 10ms 100ms DC RDS(on) Limited VDS Drain-Source Voltage (V) ID Drain Current (A)

Document number: DS31984 Rev. 4 - 3 4 of 8 www.diodes.com June 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMN20B28K Electrical Characteristics (@TA = 25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 11) Drain-Source Breakdown Voltage BVDSS 200 ⎯ ⎯ V ID = 250µA, VGS = 0 Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 500 nA VDS = 200V, VGS = 0 Gate-Source Leakage IGSS ⎯ ⎯ 100 nA VGS = 20V, VDS = 0 ON CHARACTERISTICS (Note 11) Gate Threshold Voltage VGS(th) 1 1.6 2.5 V ID = 250µA, VDS = VGS Static Drain-Source On-Resistance (Note 12) RDS(ON) ⎯ 0.650 0.750 Ω VGS = 10V, ID = 2.75A 0.670 0.780 VGS = 5V, ID = 2.75A Forward Transconductance (Notes 12 & 13) gfs ⎯ 6.13 ⎯ S VDS = 30V, ID = 2.75A Diode Forward Voltage (Note 12) VSD ⎯ 0.860 0.950 V IS = 5.5A, VGS = 0 Reverse-Recovery Time (Note 13) trr ⎯ 177 ⎯ ns IS = 6.5A, VGS = 0, di/dt = 100Aµs Reverse-Recovery Charge (Note 13) Qrr ⎯ 1.4 ⎯ µC DYNAMIC CHARACTERISTICS (Note 13) Input Capacitance Ciss ⎯ 358 ⎯ pF VDS = 25V, VGS = 0 f = 1MHz Output Capacitance Coss ⎯ 50 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 6.1 ⎯ pF Total Gate Charge Qg ⎯ 8.1 ⎯ nC VDS = 120V, VGS = 5V ID = 6.5A Gate-Source Charge Qgs ⎯ 1.4 ⎯ nC Gate-Drain Charge Qgd ⎯ 3.9 ⎯ nC Turn-On Delay Time (Note 14) tD(on) ⎯ 17.8 ⎯ ns VDD = 100V, VGS = 5V ID = 6.5A, RG  25Ω Turn-On Rise Time (Note 14) tr ⎯ 76.9 ⎯ ns Turn-Off Delay Time (Note 14) tD(off) ⎯ 44.7 ⎯ ns Turn-Off Fall Time (Note 14) tf ⎯ 57.1 ⎯ ns Notes: 11. Short duration pulse test used to minimize self-heating effect. 12. Measured under pulsed conditions. Pulse width  300s; duty cycle  2% 13. For design aid only, not subject to production testing. 14. Switching characteristics are independent of operating junction temperatures.

Document number: DS31984 Rev. 4 - 3 5 of 8 www.diodes.com June 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMN20B28K Typical Characteristics 0.1 1 10 0.01 0.1 0.1 1 10 0.01 0.1 2 3 0.1 -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0.01 0.1 1 10 1E-3 0.01 0.1 2.5V 3.5V10V Output Characteristics T = 25°C VGS ID Drain Current (A) VDS Drain-Source Voltage (V) 1.5V 10V 2.5V Output Characteristics T = 150°C VGS ID Drain Current (A) VDS Drain-Source Voltage (V) Typical Transfer Characteristics VDS = 10V T = 25°C T = 150°C ID Drain Current (A) VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(on) VGS = 10V ID = 2.75A VGS(th) VGS = VDS ID = 250uA Normalised RDS(on) and VGS(th) Tj Junction Temperature (°C) 10V 2.5V2V On-Resistance v Drain Current T = 25°C 3.5V VGS RDS(on) Drain-Source On-Resistance () ID Drain Current (A) Vgs = 0V T = 150°C T = 25°C Source-Drain Diode Forward Voltage VSD Source-Drain Voltage (V) ISD Reverse Drain Current (A)

Document number: DS31984 Rev. 4 - 3 6 of 8 www.diodes.com June 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMN20B28K Typical Characteristics (continued) 0.01 0.1 1 10 100 200 400 600 800 CRSS COSS CISS VGS = 0V f = 1MHz C Capacitance (pF) VDS - Drain - Source Voltage (V) 0 2 4 6 8 10 12 14 VDS = 120V ID = 6.5A Gate-Source Voltage v Gate ChargeCapacitance v Drain-Source Voltage Q - Charge (nC) VGS Gate-Source Voltage (V) Test Circuits

Document number: DS31984 Rev. 4 - 3 7 of 8 www.diodes.com June 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMN20B28K Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. TO252 (DPAK) Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. TO252 (DPAK) TO252 (DPAK) Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 - - e - - 2.286 E 6.45 6.70 6.58 E1 4.32 - - H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° - All Dimensions in mm Dimensions Value (in mm) C 4.572 X 1.060 X1 5.632 Y 2.600 Y1 5.700 Y2 10.700 E D b2(2x) b(3x) e c A 7°± 1° H Seating Plane Gauge Plane a 0.508 L 2.74REF X Y C

Document number: DS31984 Rev. 4 - 3 8 of 8 www.diodes.com June 2026 © 2026 Copyright Diodes Incorporated. All Rights Reserved. ZXMN20B28K IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICUL AR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes ’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes’ products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications, (c) ensuring their applications, which inco rporate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and functional - safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality co ntrol techniques , redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. 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