ZXMN15A27K

Document overview

  • Manufacturer or author: Diodes Incorporated
  • PDF pages: 8

Technical content

Document Number DS31978 Rev. 2 - 2 1 of 8 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN15A27K 150V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) ID TA = 25°C 150V 650m Ω @ VGS = 10V 2.6A Description and Applications This MOSFET features low on-state resistance, fast switching and high avalanche withstand capability, making it ideal for high efficiency power management applications.

  • SLIC line drivers for VoIP applications
  • Transformer Driving Switch
  • Power management functions
  • Motor control
  • Uninterrupted power supply Features and Benefits
  • 100% Unclamped Inductive Switch (UIS) test in production
  • High avalanche energy pulse withstand capability
  • Low input capacitance
  • Low on-resistance
  • Fast switching speed
  • "Green" component and RoHS Compliant (Note 1)
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
  • Case: TO252-3L
  • Case Material: Molded Plastic “Green” Molding Compound, UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminal Connections: See Diagram
  • Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208
  • Weight: 0.33 grams (approximate) Ordering Information (Note 1) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXMN15A27KTC See Below 13 16 2,500 Notes: 1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website. Marking Information Top View Pin Out – Top View Equivalent Circuit ZXMN = Product Type Marking Code, Line 1 15A27 = Product Type Marking Code, Line 2 YYWW = Date Code Marking YY = Last two digits of year (ex: 09 = 2009) WW = Week (01-52) D S G GS D D TO252-3L YYWW ZXMN 15A27

Document Number DS31978 Rev. 2 - 2 2 of 8 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN15A27K Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source voltage VDSS 150 V Gate-Source voltage VGS ±25 V Single Pulsed Avalanche Energy (Note 7) EAS 55 mJ Single Pulsed Avalanche Energy (Note 7) IAS 4.3 A Repetitive Avalanche Energy (Note 4) EAR 3.0 mJ Repetitive Avalanche Current (Note 4) IAR 4.3 A Continuous Drain current VGS = 10V (Note 3) TA = 70°C (Note 3) (Note 2) ID 2.55 2.0 1.7 A Pulsed Drain current VGS = 10V (Note 4) IDM 17.2 A Continuous Source current (Body diode) (Note 2) IS 5.2 A Pulsed Source current (Body diode) (Note 4) ISM 17.2 A Thermal Characteristics Characteristic Symbol Value Unit Power dissipation Linear derating factor (Note 2) PD 4.2 33.6 W mW/°C (Note 3) 9.5 76.0 (Note 6) 2.2 17.2 Thermal Resistance, Junction to Ambient (Note 2) RθJA 30.2 °C/W (Note 3) 13.1 (Note 6) 58.1 Thermal Resistance, Junction to Lead (Note 5) RθJL 2.06 °C/W Operating and storage temperature range TJ, TSTG -55 to 150 °C Notes: 2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. The device is measured when operating in a steady-state condition. 3. Same as note 2, except the device is measured at t ≤ 10 sec. 4. Same as note 2, except the device is operating in a repetitive state with pulse width and duty cycle limited by maximum junction temperature. 5. Thermal resistance from junction to solder-point at the end of the drain lead. 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition.. 7. UIS in production with L = 5.95mH, IAS = 4.3A, RG = 25Ω, VDD = 100V, starting TJ = 25°C.

Document Number DS31978 Rev. 2 - 2 3 of 8 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN15A27K Thermal Characteristics 100µ 1m 10m 100m 1 10 100 1k 1 10 100 10m 100m 11 0 1 00 10m 100m Tamb=25°C 25mm x 25mm 1oz FR4 RDS(on) Limited 100µs 1ms 10ms 100ms 1sDC Safe Operating Area ID Drain Current (A) VDS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 160 50mm x 50mm 2oz FR4 25mm x 25mm 1oz FR4 Derating Curve Temperature (°C) Max Power Dissipation (W) 100µ 1m 10m 100m 1 10 100 1k Tamb=25°C 25mm x 25mm 1oz FR4 Transient Thermal Impedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 Thermal Resistance (°C/W)Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k 100 25mm x 25mm 1oz FR4 50mm x 50mm 2oz FR4 Safe Operating Area Single Pulse Tamb=25°C Pulse Power Dissipation Pulse Width (s) Max Power Dissipation (W) D=0.1 D=0.05 Single Pulse D=0.2 D=0.5 Tamb=25°C 50mm x 50mm 2oz FR4 Transient Thermal Impedance Pulse Width (s) Thermal Resistance (°C/W) Tamb=25°C 50mm x 50mm 2oz FR4 100µs 1ms 10ms 100ms DC RDS(on) Limited VDS Drain-Source Voltage (V) ID Drain Current (A)

Document Number DS31978 Rev. 2 - 2 4 of 8 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN15A27K Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS 150 ⎯ ⎯ V ID = 250μA, VGS = 0V Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 500 nA VDS = 150V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±25V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) 2 2.7 4 V ID = 250μA, VDS = VGS Static Drain-Source On-Resistance (Note 8) RDS (ON) ⎯ 0.500 0.650 Ω VGS = 10V, ID = 2.15A Forward Transconductance (Notes 8 & 9) gfs ⎯ 2.8 ⎯ S VDS = 40V, ID = 2.15A Diode Forward Voltage (Note 8) VSD ⎯ 0.880 0.950 V IS = 4.3A, VGS = 0V Reverse recovery time (Note 9) trr ⎯ 153 ⎯ ns IS = 5.4A, VGS = 0V, di/dt = 100A/μs Reverse recovery charge (Note 9) Qrr ⎯ 1.1 ⎯ μC DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss ⎯ 169 ⎯ pF VDS = 25V, VGS = 0V f = 1MHz Output Capacitance Coss ⎯ 64.5 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 23.3 ⎯ pF Total Gate Charge Qg ⎯ 6.6 ⎯ nC VDS = 120V, VGS = 10V ID = 5.4A Gate-Source Charge Qgs ⎯ 1.0 ⎯ nC Gate-Drain Charge Qgd ⎯ 3.4 ⎯ nC Turn-On Delay Time (Note 10) tD(on) ⎯ 3.3 ⎯ ns VDD = 75V, VGS = 10V ID = 5.4A, RG ≅ 25Ω Turn-On Rise Time (Note 10) tr ⎯ 12.7 ⎯ ns Turn-Off Delay Time (Note 10) tD(off) ⎯ 17.1 ⎯ ns Turn-Off Fall Time (Note 10) tf ⎯ 13.3 ⎯ ns Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 9. For design aid only, not subject to production testing. 10. Switching characteristics are independent of operating junction temperatures.

Document Number DS31978 Rev. 2 - 2 5 of 8 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN15A27K Typical Characteristics 0.1 1 10 0.1 0.1 1 10 0.1 2345678 0.1 -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 02468 1 0 1 2 0.0 0.5 1.0 1.5 2.0 2.5 0.01 0.1 5.5V 4.5V 3.5V Output Characteristics T = 25°C VGS ID Drain Current (A) VDS Drain-Source Voltage (V) 10V 6V 5.5V 4.5V 3.5V Output Characteristics T = 150°C VGS ID Drain Current (A) VDS Drain-Source Voltage (V) T = -55°C Typical Transfer Characteristics VDS = 15V T = 25°C T = 150°C ID Drain Current (A) VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(on) VGS = 10V ID = 2.15A VGS(th) ID = 250uA VGS = VDS Normalised RDS(on) and VGS(th) Tj Junction Temperature (°C) 20V 10V 6.5V 6V5V 5.5V4.5V On-Resistance v Drain Current T = 25°C VGS RDS(on) Drain-Source On-Resistance (Ω) ID Drain Current (A) T = 150°C T = 25°C Source-Drain Diode Forward Voltage VSD Source-Drain Voltage (V) ISD Reverse Drain Current (A)

Document Number DS31978 Rev. 2 - 2 6 of 8 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN15A27K Typical Characteristics - continued 0.1 1 10 100 100 200 300 400 CRSS COSS CISS VGS = 0V f = 1MHz C Capacitance (pF) VDS - Drain - Source Voltage (V) 01234567 ID = 5.4A VDS = 30V VDS = 75V VDS = 120V Gate-Source Voltage v Gate ChargeCapacitance v Drain-Source Voltage Q - Charge (nC) VGS Gate-Source Voltage (V) Test Circuits Current regulator Charge Gate charge test circuit Switching time test circuit B a s i cg a t ec h a r g ew a v e f o r m Switching time waveforms D.U.T 50k12V Sameas D.U.T VGS VGS VDS VG QGS QGD QG VGS 90% 10% t(on)t(on) td(on) tr trt VDS DDV RD RG VDS ID IG d(off)

Document Number DS31978 Rev. 2 - 2 7 of 8 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN15A27K Package Outline Dimensions DIM Inches Millimeters DIM Inches Millimeters Min Max Min Max Min Max Min Max E 0.250 0.265 6.35 6.73 θ° 0° 15° 0° 15°

Document Number DS31978 Rev. 2 - 2 8 of 8 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN15A27K Suggested Pad Layout 5.8 0.228 1.6 0.063 6.2 0.244 3.0 0.118 6.17 0.243 2.58 0.101 mm inches IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does Di odes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or us er of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated a nd all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. Should Customers purchase or use Diodes Inco rporated products for any unintended or una uthorized application, Customers shall i ndemnify and hold Diodes Incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporate d and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2009, Diodes Incorporated www.diodes.com