ZXMN10B08E6_15 DIODES | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

Datasheet Number: DS33570 Rev. 3 – 2 1 of 7 www.diodes.com March 2015 © Diodes Incorporated ZXMN10 B08E6 NEW PRODUCT YM 10B8 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS Max RDS(on) Max ID TA = +25 °° °°C (Note 6) 100V 230mΩ @ V GS = 10V 1.9A 300mΩ @ V GS = 4.5V 1.68A Description and Applications This MOSFET utilizes a unique structure that combi nes the benefits of low on-resistance with fast switching speed. Thi s makes it ideal for high-efficiency, low voltage, power management applications.

  • DC - DC Converters
  • Power Management Functions
  • Disconnect Switches
  • Motor Control Features and Benefits
  • Low On-Resistance
  • Fast Switching Speed
  • Low Threshold
  • Low Gate Drive
  • SOT26 Package
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
  • Case: SOT26
  • Case Material: Molded Plastic, “Green” Molding Co mpound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208
  • Weight: 0.015 grams (Approximate) Ordering Information (Note 4) Part Number Reel Size (inch) Tape Width (mm) Quantity Per Reel ZXMN10B08E6TA 7 8 3,000 ZXMN10B08E6TC 13 8 10,000 Notes: 1. No purposely added lead. Fully EU Directi ve 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) complian t. 2. See http://www.diodes.com/quality/lead_free.htm l for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <9 00ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at htt p://www.diodes.com. Marking Information SOT26 Date Code Key Year 2015 2016 2017 20 18 201 9 20 20 20 21 20 22 Code C D E F G H I J Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Top View Pinout Top-view Device Symbol SOT 26 10B8 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: C = 2015) M or M = Month (ex: 9 = September)

Datasheet Number: DS33570 Rev. 3 – 2 2 of 7 www.diodes.com March 2015 © Diodes Incorporated ZXMN10 B08E6 NEW PRODUCT Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current VGS = 10V (Note 6) ID 1.9 A TA = +70 °C (Note 6) 1.5 (Note 5) 1.6 Pulsed Drain Current (Note 7) IDM 9 A Continuous Source Current (Body Diode) (Note 6) IS 2.5 A Pulsed Source Current (Body Diode) (Note 7) ISM 9 A Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation Linear Derating Factor (Note 5) P D 1.1 W mW/°C 8.8 Power Dissipation Linear Derating Factor (Note 6) P D 1.7 W mW/°C 13.6 Thermal Resistance, Junction to Ambient (Note 5) Rθ JA 113 °C/W (Note 6) 73 Operating and Storage Temperature Range TJ, T STG -55 to +150 °C Notes: 5. For a device surface mounted on 25mm x 25 mm FR4 PCB with high coverage of single sided 1oz c opper, in still air conditions. 6. For a device surface mounted on FR4 PCB measured at t ≤ 5 secs. 7. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300µs - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. Thermal Characteristics

Datasheet Number: DS33570 Rev. 3 – 2 3 of 7 www.diodes.com March 2015 © Diodes Incorporated ZXMN10 B08E6 NEW PRODUCT Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Conditi on OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS 100   V ID = 250µA, V GS = 0V Zero Gate Voltage Drain Current IDSS   0.5 µA VDS = 100V, V GS = 0V Gate-Source Leakage IGSS   100 nA VGS = ±20V, V DS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) 1.0  3.0 V ID = 250µA, V DS = V GS Static Drain-Source On-Resistance (Note 8) RDS(ON)   0.23 Ω VGS = 10V, I D = 1.6A 0.30 VGS = 4.5V, I D = 1.4A 0.50 VGS = 4.3V, I D = 1.1A Forward Transconductance (Notes 8 & 10) gfs  4.8  S VDS = 15V, I D = 1.6A Diode Forward Voltage (Note 8) VSD  0.85 0.95 V TJ = +25° C, IS = 2.0A, V GS = 0V DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Ciss  497  pF VDS = 50V, V GS = 0V f = 1.0MHz Output Capacitance Coss  29  pF Reverse Transfer Capacitance Crss  18  pF Gate Charge (Note 9) Qg  5.0  nC VDS = 50V , VGS = 5V, ID = 1.6A Total Gate Charge (Note 9) Qg  9.2  nC VDS = 50V, VGS = 10V, ID = 1.6A Gate-Source Charge (Note 9) Qgs  1.7  nC Gate-Drain Charge (Note 9) Qgd  2.5  nC Turn-On Delay Time (Note 9) td(on)  2.9  ns VDD = 50V, I D = 1.0A, RG ≅ 6.0 Ω, VGS = 10V Turn-On Rise Time (Note 9) tr  2.1  ns Turn-Off Delay Time (Note 9) td(off)  12.1  ns Turn-Off Fall Time (Note 9) tf  5.0  ns Reverse Recovery Time trr  32  ns TJ = +25° C, IF = 1.7A, di/dt = 100A/µs Reverse Recovery Charge Qrr  40  nC Notes: 8. Measured under pulsed conditions. Width ≤ 300 µs. Duty cycle ≤ 2%. 9. Switching characteristics are independent of o perating junction temperature. 10. For design aid only, not subject to production testing.

Datasheet Number: DS33570 Rev. 3 – 2 4 of 7 www.diodes.com March 2015 © Diodes Incorporated ZXMN10 B08E6 NEW PRODUCT Typical Characteristics

Datasheet Number: DS33570 Rev. 3 – 2 5 of 7 www.diodes.com March 2015 © Diodes Incorporated ZXMN10 B08E6 NEW PRODUCT Typical Characteristics (continued) Test Circuits

Datasheet Number: DS33570 Rev. 3 – 2 6 of 7 www.diodes.com March 2015 © Diodes Incorporated ZXMN10 B08E6 NEW PRODUCT Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D e E 1 E b A 2 A 1 S e a ti n g P la n e L c a e 1 A 3 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y1 G X Y C SOT26 Dim Min Max Typ A1 0.013 0.10 0.05 A2 1.00 1.30 1.10 A3 0.70 0.80 0.75 b 0.35 0.50 0.38 c 0.10 0.20 0.15 D 2.90 3.10 3.00 e - - 0.95 e1 - - 1.90 E 2.70 3.00 2.80 E1 1.50 1.70 1.60 L 0.35 0.55 0.40 a - - 8° a1 - - 7° All Dimensions in mm Dimensions Value (in mm) C 2.40 C1 0.95 G 1.60 X 0.55 Y 0.80 Y1 3.20

Datasheet Number: DS33570 Rev. 3 – 2 7 of 7 www.diodes.com March 2015 © Diodes Incorporated ZXMN10 B08E6 NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTI ES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve th e right to make modifications, enhancements, improv ements, corrections or other changes without further notice to this document and any pro duct described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Cu stomer or user of this document or products describ ed herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporate d products for any unintended or unauthorized appli cation, Customers shall indemnify and hold Diodes Incorporated and its representatives ha rmless against all claims, damages, expenses, and a ttorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patent s pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be tran slated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not a uthorized for use as critical components in life su pport devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary ex pertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety- critical, life support devices or systems, notwiths tanding any devices- or systems-related information or support that may be provided by Diod es Incorporated. Further, Customers must fully ind emnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com