ZXMN10B08E6
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 8
Technical content
Document number: DS33570 Rev. 4 - 2 1 of 8 www.diodes.com March 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. ZXMN10B08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS Max RDS(on) Max ID TA = +25C (Note 5) 100V 230mΩ @ VGS = 10V 1.9A 300mΩ @ VGS = 4.5V 1.68A Description and Applications This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes it ideal for high-efficiency, low-voltage, power-management applications. DC-DC converters Power-management functions Disconnect switches Motor controls Features and Benefits Low On-Resistance Fast Switching Speed Low Threshold Low Gate Drive SOT26 Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotive- products/. This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/ Mechanical Data Package: SOT26 Package Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.015 grams (Approximate) Ordering Information (Note 4) Part Number Package Reel Size (inch) Tape Width (mm) Packing Qty. Carrier ZXMN10B08E6TA SOT26 7 8 3,000 Reel ZXMN10B08E6TC SOT26 13 8 10,000 Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 201 5/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. 5. For a device surface-mounted on FR4 PCB measured at t ≤ 5 secs. Top View Pinout Top View Device Symbol SOT26
Document number: DS33570 Rev. 4 - 2 2 of 8 www.diodes.com March 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. ZXMN10B08E6 YM 10B8 Marking Information SOT26 Date Code Key Year 2014 - 2024 2025 2026 2027 2028 2029 2030 2031 2032 2033 Code B - L M N P R S T U V W Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS 20 V Continuous Drain Current VGS = 10V (Note 5) ID 1.9 A TA = +70C (Note 5) 1.5 (Note 6) 1.6 Pulsed Drain Current (Note 7) IDM 9 A Continuous Source Current (Body Diode) (Note 5) IS 2.5 A Pulsed Source Current (Body Diode) (Note 7) ISM 9 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation Linear Derating Factor (Note 6) PD 1.1 W mW/C 8.8 Power Dissipation Linear Derating Factor (Note 5) PD 1.7 W mW/C 13.6 Thermal Resistance, Junction to Ambient (Note 6) RθJA 113 C/W (Note 5) 73 Operating and Storage Temperature Range TJ, TSTG -55 to +150 C Notes: 5. For a device surface-mounted on FR4 PCB measured at t ≤ 5 secs. 6. For a device surface-mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions . 7. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300µs - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. 10B8 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: L = 2024) M or M = Month (ex: 9 = September)
Document number: DS33570 Rev. 4 - 2 3 of 8 www.diodes.com March 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. ZXMN10B08E6 Thermal Characteristics 100m 1 10 100 10m 100m 1µs 10µs1oz 25mm x 25mm Copper FR4 VDS Drain-Source Voltage (V) Single Pulse Tamb=25°C RDS(on) Limited 100µs 1ms 10ms 100ms DC Safe Operating Area IC Drain Current (A) 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1oz 25mm x 25mm Copper FR4 Derating Curve Temperature (°C) Max Power Dissipation (W) 1µ 10µ 100µ 1m 10m100m 1 10 100 1k 100 120 1oz 25mm x 25mm Copper FR4 Tamb=25°C Transient Thermal Impedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 Thermal Resistance (°C/W) Pulse Width (s) 1µ 10µ 100µ 1m 10m100m 1 10 100 1k 100 1000 1oz 25mm x 25mm Copper FR4 Single Pulse Tamb=25°C Pulse Power Dissipation Pulse Width (s) Maximum Power (W)
Document number: DS33570 Rev. 4 - 2 4 of 8 www.diodes.com March 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. ZXMN10B08E6 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS 100 V ID = 250µA, VGS = 0V Zero Gate Voltage Drain Current IDSS 0.5 µA VDS = 100V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) 1.0 3.0 V ID = 250µA, VDS = VGS Static Drain-Source On-Resistance (Note 8) RDS(on) 0.23 Ω VGS = 10V, ID = 1.6A 0.30 VGS = 4.5V, ID = 1.4A 0.50 VGS = 4.3V, ID = 1.1A Forward Transconductance (Notes 8 & 9) gfs 4.8 S VDS = 15V, ID = 1.6A Diode Forward Voltage (Note 8) VSD 0.85 0.95 V TJ = +25°C, IS = 2.0A, VGS = 0V DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss 497 pF VDS = 50V, VGS = 0V f = 1.0MHz Output Capacitance Coss 29 pF Reverse Transfer Capacitance Crss 18 pF Gate Charge (Note 10) Qg 5.0 nC VDS = 50V, VGS = 5V, ID = 1.6A Total Gate Charge (Note 10) Qg 9.2 nC VDS = 50V, VGS = 10V ID = 1.6A Gate-Source Charge (Note 10) Qgs 1.7 nC Gate-Drain Charge (Note 10) Qgd 2.5 nC Turn-On Delay Time (Note 10) td(on) 2.9 ns VDD = 50V, ID = 1.0A RG 6.0Ω, VGS = 10V Turn-On Rise Time (Note 10) tr 2.1 ns Turn-Off Delay Time (Note 10) td(off) 12.1 ns Turn-Off Fall Time (Note 10) tf 5.0 ns Reverse Recovery Time trr 32 ns TJ = +25°C, IF = 1.7A di/dt = 100A/µs Reverse Recovery Charge Qrr 40 nC Notes: 8. Measured under pulsed conditions. Width ≤ 300μs. Duty cycle ≤ 2%. 9. For design aid only, not subject to production testing. 10. Switching characteristics are independent of operating junction temperature.
Document number: DS33570 Rev. 4 - 2 5 of 8 www.diodes.com March 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. ZXMN10B08E6 Typical Characteristics
Document number: DS33570 Rev. 4 - 2 6 of 8 www.diodes.com March 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. ZXMN10B08E6 Typical Characteristics (continued) Test Circuits 1µs
Document number: DS33570 Rev. 4 - 2 7 of 8 www.diodes.com March 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. ZXMN10B08E6 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT26 D e E1 E b A2 A1 Seating Plane L c a SOT26 Dim Min Max Typ A1 0.013 0.10 0.05 A2 1.00 1.30 1.10 A3 0.70 0.80 0.75 b 0.35 0.50 0.38 c 0.10 0.20 0.15 D 2.90 3.10 3.00 e - - 0.95 e1 - - 1.90 E 2.70 3.00 2.80 E1 1.50 1.70 1.60 L 0.35 0.55 0.40 a - - 8° a1 - - 7° All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT26 Y1 G X Y C Dimensions Value (in mm) C 2.40 C1 0.95 G 1.60 X 0.55 Y 0.80 Y1 3.20
Document number: DS33570 Rev. 4 - 2 8 of 8 www.diodes.com March 2024 © 2024 Copyright Diodes Incorporated. All Rights Reserved. ZXMN10B08E6 IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECT UAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes ’ products described herein and application e xamples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who d esign with Diodes’ products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications, (c) ensuring their applications, which incorporate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design w ith appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associ ated with their applications. 3. Diodes assumes no l iability for any application -related information, support, assistance or feedback that may be provided by Diodes from time to time. 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