ZXMN10A25K

ZXMN10A25K

Document overview

• Manufacturer or author: Diodes Incorporated
• PDF pages: 8

Technical content

Features

• Low On-Resistance
• Fast Switching Speed
• Low Gate Drive
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
• Case: TO252 (DPAK)
• Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 (Note 1)
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208
• Weight: 0.33 grams (approximate) Ordering Information (4 & 5) Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel ZXMN10A25KTC ZXMN10A25 13 16 2,500 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoH S 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com for more in formation about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For Packaging Details, go to our website at http://www .diodes.com. 5. Products with Q-suffix are automotive grade. Automotive products are electrical and thermal the same as the commercial, except where specified. Marking Information Green Top View Pin Out -Top View Equivalent Circuit TO252 GS D D ZXMN10A25 = Product Type Marking Code ZXMN 10A25

Document number: DS33569 Rev. 3 - 2 2 of 8 www.diodes.com July 2012 © Diodes Incorporated ZXMN10A25K A Product Line of Diodes Incorporated Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source voltage VDSS 100 V Gate-Source voltage VGS ±20 V Continuous Drain current VGS = 10V (Note 7) ID 6.4 A TA = +70°C (Note 7) 5 (Note 6) 4.2 Pulsed Drain current (Note 8) IDM 21 A Continuous Source current (Body diode) (Note 7) IS 10 A Pulsed Source current (Body diode) (Note 8) ISM 21 A Thermal Characteristics Characteristic Symbol Value Unit Power dissipation Linear derating factor (Note 6) PD 4.25 W mW/°C (Note 7) 9.85 78.7 (Note 9) 2.11 16.8 Thermal Resistance, Junction to Ambient (Note 6) RθJA 29.4 °C/W (Note 7) 12.7 (Note 9) 59.1 Thermal Resistance, Junction to Lead (Note 10) RθJL 1.43 Operating and storage temperature range TJ, TSTG -55 to 150 °C Notes: 6. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 7. For a device surface mounted on FR4 PCB measured at t ≤ 10 sec. 9. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 10. Thermal resistance from junction to solder-point (at the end of the drain lead).

Document number: DS33569 Rev. 3 - 2 3 of 8 www.diodes.com July 2012 © Diodes Incorporated ZXMN10A25K A Product Line of Diodes Incorporated Thermal Characteristics 100µ 1m 10m 100m 1 10 100 1k0 1 10 100 10m 100m 11 0 1 00 10m 100m Tamb=25°C 25mm x 25mm 1oz FR4 RDS(on) Limit 100µs 1ms 10ms 100ms DC Safe Operating Area ID Drain Current (A) VDS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 1600.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 50mm x 50mm 2oz FR4 25mm x 25mm 1oz FR4 Derating Curve Temperature (°C) Max Power Dissipation (W) 100µ 1m 10m 100m 1 10 100 1k0 Tamb=25°C 25mm x 25mm 1oz FR4 Transient Thermal Impedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 Thermal Resistance (°C/W)Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k1 100 25mm x 25mm 1oz FR4 50mm x 50mm 2oz FR4 Safe Operating Area Single Pulse Tamb=25°C Pulse Power Dissipation Pulse Width (s) Max Power Dissipation (W) D=0.1 D=0.05 Single Pulse D=0.2 D=0.5 Tamb=25°C 50mm x 50mm 2oz FR4 Transient Thermal Impedance Pulse Width (s) Thermal Resistance (°C/W) Tamb=25°C 50mm x 50mm 2oz FR4 100µs 1ms 10ms 100ms DC RDS(on) Limit VDS Drain-Source Voltage (V) ID Drain Current (A)

Document number: DS33569 Rev. 3 - 2 4 of 8 www.diodes.com July 2012 © Diodes Incorporated ZXMN10A25K A Product Line of Diodes Incorporated Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS 100 ⎯ ⎯ V ID = 250µA, VGS = 0V Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 0.5 μA VDS = 100V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) 2.0 ⎯ 4.0 V ID = 250µA, VDS = VGS Static Drain-Source On-Resistance (Note 11) RDS (ON) ⎯ ⎯ 125 mΩ VGS = 10V, ID = 3.2A 150 VGS = 6V, ID = 2.6A Forward Transconductance (Notes 11 & 12) gfs ⎯ 7.3 ⎯ S VDS = 15V, ID = 2.9A Diode Forward Voltage (Note 11) VSD ⎯ 0.85 0.95 V IS = 3.2A, VGS = 0V, TJ = +25°C Reverse recovery time (Note 12) trr 40.5 ⎯ ns IS = 2.9A, di/dt = 100A/µs TJ = +25°C Reverse recovery charge (Note 12) Qrr ⎯ 62 ⎯ nC DYNAMIC CHARACTERISTICS (Note 12) Input Capacitance Ciss ⎯ 859 ⎯ pF VDS = 50V, VGS = 0V f = 1MHz Output Capacitance Coss ⎯ 57.3 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 33 ⎯ pF Total Gate Charge (Note 13) Qg ⎯ 9.6 ⎯ nC VGS = 5V VDS = 50V ID = 2.9A Total Gate Charge (Note 13) Qg ⎯ 17.16 ⎯ nC VGS = 10V Gate-Source Charge (Note 13) Qgs ⎯ 3.77 ⎯ nC Gate-Drain Charge (Note 13) Qgd ⎯ 5.36 ⎯ nC Turn-On Delay Time (Note 13) tD(on) ⎯ 4.9 ⎯ ns VDD = 50V, VGS = 10V ID = 1A, RG ≅ 6.0Ω Turn-On Rise Time (Note 13) tr ⎯ 3.7 ⎯ ns Turn-Off Delay Time (Note 13) tD(off) ⎯ 17.7 ⎯ ns Turn-Off Fall Time (Note 13) tf ⎯ 9.4 ⎯ ns Notes: 11. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2% 12. For design aid only, not subject to production testing. 13. Switching characteristics are independent of operating junction temperatures.

Document number: DS33569 Rev. 3 - 2 5 of 8 www.diodes.com July 2012 © Diodes Incorporated ZXMN10A25K A Product Line of Diodes Incorporated Typical Characteristics 0.1 1 10 0.1 0.1 1 100.01 0.1 34560.1 -50 0 50 100 1500.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0.1 1 10 0.1 0.1 4.5V 10V Output Characteristics T = 25°C VGS ID Drain Current (A) VDS Drain-Source Voltage (V) 10V 4.5V 3.5V Output Characteristics T = 150°C VGS ID Drain Current (A) VDS Drain-Source Voltage (V) Typical Transfer Characteristics VDS = 10V T = 25°C T = 150°C ID Drain Current (A) VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(on) VGS = 10V ID = 2.9A VGS(th) VGS = VDS ID = 250uA Normalised RDS(on) and VGS(th) Tj Junction Temperature (°C) 10V 4.5V On-Resistance v Drain Current T = 25°CVGS RDS(on) Drain-Source On-Resistance (Ω) ID Drain Current (A) T = 150°C T = 25°C Source-Drain Diode Forward Voltage VSD Source-Drain Voltage (V) ISD Reverse Drain Current (A)

Document number: DS33569 Rev. 3 - 2 6 of 8 www.diodes.com July 2012 © Diodes Incorporated ZXMN10A25K A Product Line of Diodes Incorporated Typical Characteristics (cont.) 0.1 1 10 1000 200 400 600 800 1000 1200 CRSS COSS CISS VGS = 0V f = 1MHz C Capacitance (pF) VDS - Drain - Source Voltage (V) 02468 1 0 1 2 1 4 1 6 1 80 ID = 2.9A VDS = 50V Gate-Source Voltage v Gate ChargeCapacitance v Drain-Source Voltage Q - Charge (nC) VGS Gate-Source Voltage (V) Test Circuits Current regulator Charge Gate charge test circuit Switching time test circuit Basic gate charge waveform Switching time waveforms D.U.T 50k 0.2/H9262F 12V Same as D.U.T VGS VGS VDS VG QGS QGD QG VGS 90% 10% t(on) t(on) td(on) tr tr td(off) VDS VDD RD RG Pulse width /H11021 1/H9262S Duty factor 0.1% VDS ID IG

Document number: DS33569 Rev. 3 - 2 7 of 8 www.diodes.com July 2012 © Diodes Incorporated ZXMN10A25K A Product Line of Diodes Incorporated Package Outline Dimensions Suggested Pad Layout TO252 Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c2 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 − − e − − 2.286 E 6.45 6.70 6.58 E1 4.32 − − H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° − All Dimensions in mm Dimensions Value (in mm) Z 11.6 X1 1.5 X2 7.0 Y1 2.5 Y2 7.0 C 6.9 E1 2.3 E 2X b2 D A e L 3X b a H A2 E1 C Z

Document number: DS33569 Rev. 3 - 2 8 of 8 www.diodes.com July 2012 © Diodes Incorporated ZXMN10A25K A Product Line of Diodes Incorporated IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does Di odes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or us er of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated a nd all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. Should Customers purchase or use Diodes Inco rporated products for any unintended or una uthorized application, Customers shall i ndemnify and hold Diodes Incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporate d and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2012, Diodes Incorporated www.diodes.com