ZXMN10A11K DIODES | Alldatasheet

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Document Number DS32058 Rev. 2 - 2 1 of 8 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A11K 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) ID TA = 25°C 100V 350mΩ @ VGS = 10V 3.5A 450mΩ @ VGS = 6V 3.1A Description and Applications This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

  • Motor control
  • DC-DC Converters
  • Power management functions
  • Uninterrupted power supply Features and Benefits
  • Fast switching speed
  • Low input capacitance
  • “Green” Component and RoHS compliant (Note 1)
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
  • Case: TO252-3L
  • Case Material: Molded Plastic “Green” Molding Compound, UL Flammability Classification Rating 94V-0 (Note 1)
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminal Connections: See Diagram
  • Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208
  • Weight: 0.33 grams (approximate) Ordering Information (Note 1) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXMN10A11KTC See Below 13 16 2,500 Note: 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website. Marking Information Top View Pin Out – Top View Equivalent Circuit D S G GS D D TO252-3L ZXMN 10A11 YYWW ZXMN = Product Type Marking Code, Line 1 10A11 = Product Type Marking Code, Line 2 YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01-52)

Document Number DS32058 Rev. 2 - 2 2 of 8 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A11K Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source voltage VDSS 100 V Gate-Source voltage VGS ±20 V Continuous Drain current VGS = 10V (Note 3) TA = 70°C (Note 3) (Note 2) ID 3.5 2.8 2.4 A Pulsed Drain current VGS = 10V (Note 4) IDM 9.9 A Continuous Source current (Body diode) (Note 3) IS 8.4 A Pulsed Source current (Body diode) (Note 4) ISM 9.9 A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Power dissipation Linear derating factor (Note 2) PD 4.06 32.4 W mW/°C (Note 3) 8.5 68.0 (Note 6) 2.11 16.8 Thermal Resistance, Junction to Ambient (Note 2) RθJA 30.8 °C/W (Note 3) 14.7 (Note 6) 59.1 Thermal Resistance, Junction to Lead (Note 5) RθJL 1.10 °C/W Operating and storage temperature range TJ, TSTG -55 to 150 °C Notes: 2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still a ir conditions; the device is measured when operating in a steady-state condition. 3. Same as note 2, except the device is measured at t ≤ 10 sec. 4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature. 5. Thermal resistance from junction to solder-point (at the end of the drain lead). 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with the high coverage single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition.

Document Number DS32058 Rev. 2 - 2 3 of 8 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A11K Thermal Characteristics 100µ 1m 10m 100m 1 10 100 1k 11 0 1 00 10m 100m 1 10 100 10m 100m Tamb=25°C 25mm x 25mm 1oz FR4 RDS(on) Limited 100µs 1ms 10ms 100ms DC Safe Operating Area ID Drain Current (A) VDS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 50mm x 50mm 2oz FR4 25mm x 25mm 1oz FR4 Derating Curve Temperature (°C) Max Power Dissipation (W) 100µ 1m 10m 100m 1 10 100 1k Tamb=25°C 25mm x 25mm 1oz FR4 Transient Thermal Impedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 Thermal Resistance (°C/W) Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k 100 25mm x 25mm 1oz FR4 50mm x 50mm 2oz FR4 Safe Operating Area Single Pulse Tamb=25°C Pulse Power Dissipation Pulse Width (s) Max Power Dissipation (W) D=0.1 D=0.05 Single Pulse D=0.2 D=0.5 Tamb=25°C 50mm x 50mm 2oz FR4 Transient Thermal Impedance Pulse Width (s) Thermal Resistance (°C/W) Tamb=25°C 50mm x 50mm 2oz FR4 100µs 1ms 10ms 100ms DC RDS(on) Limited VDS Drain-Source Voltage (V) ID Drain Current (A)

Document Number DS32058 Rev. 2 - 2 4 of 8 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A11K Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS 100 ⎯ ⎯ V ID = 250μA, VGS = 0V Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 µA VDS = 100V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) 2 ⎯ 4 V ID = 250μA, VDS = VGS Static Drain-Source On-Resistance (Note 7) RDS (ON) ⎯ ⎯ 0.350 Ω VGS = 10V, ID = 2.6A 0.450 VGS = 6V, ID = 1.3A Forward Transconductance (Notes 7 & 8) gfs ⎯ 4 ⎯ S VDS = 15V, ID = 2.6A Diode Forward Voltage (Note 7) VSD ⎯ 0.850 0.950 V IS = 1.85A, VGS = 0V Reverse recovery time (Note 8) trr ⎯ 26 ⎯ ns IS = 1.0A, di/dt = 100A/μs Reverse recovery charge (Note 8) Qrr ⎯ 30 ⎯ nC DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss ⎯ 274 ⎯ pF VDS = 50V, VGS = 0V f = 1MHz Output Capacitance Coss ⎯ 21 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 11 ⎯ pF Total Gate Charge (Note 9) Qg ⎯ 3.5 ⎯ nC VGS = 6V VDS = 50V, ID = 2.5A Total Gate Charge (Note 9) Qg ⎯ 5.4 ⎯ nC VGS = 10V Gate-Source Charge (Note 9) Qgs ⎯ 1.4 ⎯ nC Gate-Drain Charge (Note 9) Qgd ⎯ 1.5 ⎯ nC Turn-On Delay Time (Note 9) tD(on) ⎯ 2.7 ⎯ ns VDD = 50V, VGS = 10V ID = 1.0A, RG ≅ 6Ω Turn-On Rise Time (Note 9) tr ⎯ 1.7 ⎯ ns Turn-Off Delay Time (Note 9) tD(off) ⎯ 7.4 ⎯ ns Turn-Off Fall Time (Note 9) tf ⎯ 3.5 ⎯ ns Notes: 7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 8. For design aid only, not subject to production testing. 9. Switching characteristics are independent of operating junction temperatures.

Document Number DS32058 Rev. 2 - 2 5 of 8 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A11K Typical Characteristics 0.1 1 10 0.01 0.1 0.1 1 10 0.01 0.1 345 0.1 -50 0 50 100 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0.01 0.1 1 10 0.1 100 0.4 0.6 0.8 1.0 0.01 0.1 3.5V 10V Output Characteristics T = 25°C 4.5V VGS ID Drain Current (A) VDS Drain-Source Voltage (V) 10V 2.5V 4.5V 3.5V Output Characteristics T = 150°C VGS ID Drain Current (A) VDS Drain-Source Voltage (V) Typical Transfer Characteristics VDS = 10V T = 25°C T = 150°C ID Drain Current (A) VGS Gate-Source Voltage (V) Normalised Curves v Temperature RDS(on) VGS = 10V ID = 2.6A VGS(th) VGS = VDS ID = 250uA Normalised RDS(on) and VGS(th) Tj Junction Temperature (°C) 3.5V 4V 10V 4.5V On-Resistance v Drain Current T = 25°C VGS RDS(on) Drain-Source On-Resistance (Ω) ID Drain Current (A) T = 150°C T = 25°C Source-Drain Diode Forward Voltage VSD Source-Drain Voltage (V) ISD Reverse Drain Current (A)

Document Number DS32058 Rev. 2 - 2 6 of 8 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A11K Typical Characteristics - continued 1 10 100 100 200 300 400 CRSS COSS CISS VGS = 0V f = 1MHz C Capacitance (pF) VDS - Drain - Source Voltage (V) 0123456 ID = 2.5A VDS = 50V Gate-Source Voltage v Gate ChargeCapacitance v Drain-Source Voltage Q - Charge (nC) VGS Gate-Source Voltage (V) Test Circuits Current regulator Charge Gate charge test circuit Switching time test circuit B a s i cg a t ec h a r g ew a v e f o r m Switching time waveforms D.U.T 50k12V Sameas D.U.T VGS VGS VDS VG QGS QGD QG VGS 90% 10% t(on)t(on) td(on) tr trt VDS DDV RD RG VDS ID IG d(off)

Document Number DS32058 Rev. 2 - 2 7 of 8 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A11K Package Outline Dimensions DIM Inches Millimeters DIM Inches Millimeters Min Max Min Max Min Max Min Max E 0.250 0.265 6.35 6.73 θ° 0° 15° 0° 15°

Document Number DS32058 Rev. 2 - 2 8 of 8 www.diodes.com January 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A11K Suggested Pad Layout 5.8 0.228 1.6 0.063 6.2 0.244 3.0 0.118 6.17 0.243 2.58 0.101 mm inches IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does Di odes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or us er of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated a nd all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or una uthorized application, Customers shall i ndemnify and hold Diodes Incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2009, Diodes Incorporated www.diodes.com