ZXMN10A08G KEXIN | Alldatasheet
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Technical content
www.kexin.com.cn 1 MOSFET N-Channel MOSFET ZXMN10A08G (KXMN10A08G) ■ Features
- VDS (V) = 100V
- ID = 2.9 A (VGS = 10V)
- RDS(ON) ＜ 250mΩ (VGS = 10V)
- RDS(ON) ＜ 300mΩ (VGS = 6V) D S G ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit VDS 100 VGS ±20 TA=25℃ (Note.1) 2.9 TA=70℃ (Note.1) 2.3 TA=25℃ (Note.2) 2 IDM 11 Power Dissipation TA=25℃ (Note.2) PD 2 W 3.9 mW/℃ TA=25℃ (Note.1) 16 W 31 mW/℃ (Note.2) 62.5 (Note.1) 32 TJ 150 Tstg -55 to 150 Junction Temperature Storage Temperature Range ℃/W RthJA Parameter Continuous Drain Current @ VGS= 10V ID Drain-Source Voltage Gate-Source Voltage Linear derating factor Linear derating factor Thermal Resistance.Junction- to-Ambient V A Pulsed Drain Current Note.1: For a device surface mounted on FR4 PCB measured at t ≤ 10 sec. Note.2: For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz in still air conditions. 1.80 (max) 0.02 ~ 0.1 0.70±0.1 4.60 (typ) 10b 7.0±0.3 3.50±0.2 6.50±0.2 3.00±0.1 2.30 (typ) SOT-223 Unit:mm 1 2 3 0.250 Gauge Plane 1.Gate 2.Drain 3.Source 4.Drain
www.kexin.com.cn2 MOSFET N-Channel MOSFET ZXMN10A08G (KXMN10A08G) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 100 V Zero Gate Voltage Drain Current IDSS VDS=100V, VGS=0V 0.5 μA Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS , ID=250μA 2 4 V VGS=10V, ID=3.2A (Note.1) 250 VGS=6V, ID=2.6A (Note.1) 300 Forward Transconductance gFS VDS=15V, ID=3.2A (Note.1) 5 S Input Capacitance Ciss 405 Output Capacitance Coss 28.2 Reverse Transfer Capacitance Crss 14.2 VGS= 5V, VDS= 50V ID= 1.2A 4.2 7.7 Gate Source Charge Qgs 1.8 Gate Drain Charge Qgd 2.1 Turn-On DelayTime td(on) 3.4 Turn-On Rise Time tr 2.2 Turn-Off DelayTime td(off) 8 Turn-Off Fall Time tf 3.2 Body Diode Reverse Recovery Time trr 27 Body Diode Reverse Recovery Charge Qrr 32 nC Maximum Body-Diode Continuous Current IS 5 Pulsed source current ISM 11 Diode Forward Voltage VSD IS=3.2A,VGS=0V,Tj=25°C 0.95 V A pF Total Gate Charge Qg nC ns mΩ VGS=10V, VDS=30V, ID=1.2A,RG=6Ω RDS(On) Static Drain-Source On-Resistance VGS=0V, VDS=50V, f=1MHz VGS=10V, VDS=50V, ID=1.2A IF= 1.2A, dI/dt= 100A/μs,Tj=25°C Note.1:Measured under pulsed conditions. Pulse width ≤ 300us; duty cycle ≤ 2%. ■ Marking ZXMN 10A08 Marking
www.kexin.com.cn 3 MOSF ET N-Channel MOSFET ZXMN10A08G (KXMN10A08G) ■ Typical Characterisitics
www.kexin.com.cn4 MOSFE T N-Channel MOSFET ZXMN10A08G (KXMN10A08G) ■ Typical Characterisitics
www.kexin.com.cn 5 MOSF ET N-Channel MOSFET ZXMN10A08G (KXMN10A08G) ■ Typical Characterisitics